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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
---|---|---|---|---|
FQI4N20TU DISTI # FQI4N20TU-ND | ON Semiconductor | MOSFET N-CH 200V 3.6A I2PAK RoHS: Compliant Min Qty: 1000 Container: Tube | Limited Supply - Call | |
FQI4N20TU DISTI # 512-FQI4N20TU | ON Semiconductor | MOSFET RoHS: Compliant | 0 | |
FQI4N20TU | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 5000 |
|
Сурет | Бөлім № | Сипаттама |
---|---|---|
Mfr.#: FQI47P06TU OMO.#: OMO-FQI47P06TU |
MOSFET 60V P-Channel QFET | |
Mfr.#: FQI4N25TU OMO.#: OMO-FQI4N25TU |
MOSFET | |
Mfr.#: FQI45N03L OMO.#: OMO-FQI45N03L-1190 |
Жаңа және түпнұсқа | |
Mfr.#: FQI47P06TU |
MOSFET P-CH 60V 47A I2PAK | |
Mfr.#: FQI4N20 OMO.#: OMO-FQI4N20-1190 |
Power Field-Effect Transistor, 3.6A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | |
Mfr.#: FQI4N25TU |
MOSFET N-CH 250V 3.6A I2PAK | |
Mfr.#: FQI4N25TUFSC OMO.#: OMO-FQI4N25TUFSC-1190 |
Жаңа және түпнұсқа | |
Mfr.#: FQI4N80 OMO.#: OMO-FQI4N80-1190 |
Жаңа және түпнұсқа | |
Mfr.#: FQI4N90 OMO.#: OMO-FQI4N90-1190 |
Жаңа және түпнұсқа | |
Mfr.#: FQI4N90TU |
IGBT Transistors MOSFET 900V N-Channel QFET |