IRF7779L2TR1PBF

Mfr. #:: IRF7779L2TR1PBF
Өндіруші:: Infineon / IR
Сипаттама:: MOSFET 150V 67A 11mOhm 97nC Qg
Өміршеңдік кезең:: Осы өндірушіден жаңа.
Деректер тізімі:: IRF7779L2TR1PBF Деректер тізімі
Жеткізу:: DHL FedEx Ups TNT EMS
Төлем:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRF7779L2TR1PBF Datasheet IRF7779L2TR1PBF Datasheet (P4-P6)IRF7779L2TR1PBF Datasheet (P7-P9)IRF7779L2TR1PBF Datasheet (P10-P11)
ECAD Model:

Өнім атрибуты
Төлсипат мәні

Өндіруші:: Infineon

Өнім санаты:: MOSFET

RoHS:: Y

Технология:: Си

Орнату стилі:: SMD/SMT

Пакет/қорап:: DirectFET-L8

Арналар саны:: 1 Channel

Транзистордың полярлығы:: N-арна

Vds - ағызу көзінің бұзылу кернеуі:: 150 V

Идентификатор - үздіксіз төгу тогы:: 67 A

Rds On - ағызу көзіне қарсылық:: 9 mOhms

Vgs th - Gate-Source шекті кернеуі:: 5 V

Vgs - Шлюз көзі кернеуі:: 20 V

Qg - қақпа заряды:: 97 nC

Максималды жұмыс температурасы:: + 175 C

Pd - қуаттың шығыны:: 125 W

Конфигурация:: Бойдақ

Қаптама:: Ролик

Биіктігі:: 0.74 mm

Ұзындығы:: 9.15 mm

Транзистор түрі:: 1 N-Channel

Ені:: 7.1 mm

Бренд:: Infineon / IR

Форвард өткізгіштік - Мин:: 83 S

Күз уақыты:: 12 ns

Өнім түрі:: MOSFET

Көтеру уақыты:: 19 ns

Зауыттық буманың саны:: 1000

Ішкі санат:: MOSFETs

Бөлім # Бүркеншік аттар:: SP001575282

Tags: IRF777, IRF77, IRF7, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF7779L2TR1PBF Сипаттама

***ical: Trans MOSFET N-CH 150V 67A 15-Pin Direct-FET L8 T/R

***Components: MOSFET N-Ch 150V 67A Direct-FET L8

***ment14 APAC: N CH MOSFET, 150V, 11A DIRECTFET L8

***ied Electronics & Automation: MOSFET; 150V, 67A, 11 MOHM, 97NC QG

***i-Key: MOSFET N-CH 150V 375A DIRECTFET

***ernational Rectifier: A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MP package rated at 11 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

***ark: N CH MOSFET, 150V, 11A DIRECTFET L8; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes

***nell: MOSFET, N CH, 150V, 67A, DIRECTFET L8; Transistor Polarity:N Channel; Current Id Max:67A; Drain Source Voltage Vds:150V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:125W; Operating Temperature Range:-55°C to +175°C; No. of Pins:5

Market price

Бөлім №	Mfg.	Сипаттама	Қор	Бағасы
IRF7779L2TR1PBF DISTI # IRF7779L2TR1PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 150V 375A DIRECTFET RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IRF7779L2TR1PBF DISTI # IRF7779L2TR1PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 150V 375A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IRF7779L2TR1PBF DISTI # IRF7779L2TR1PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 150V 375A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IRF7779L2TR1PBF DISTI # 70019645	Infineon Technologies AG	IRF7779L2TR1PBF N-channel MOSFET Transistor,375 A,150 V,11-Pin DirectFET L8 RoHS: Compliant	0	1000:$3.4300
IRF7779L2TR1PBF DISTI # 942-IRF7779L2TR1PBF	Infineon Technologies AG	MOSFET 150V 67A 11mOhm 97nC Qg RoHS: Compliant	0
IRF7779L2TR1PBF DISTI # 1791559	Infineon Technologies AG	MOSFET, N CH, 150V, 67A, DIRECTFET L8 RoHS: Compliant	0	1:$9.7600 10:$5.9600 100:$5.6700 250:$5.3600 500:$5.1700 1000:$5.0000 2000:$4.7900 5000:$4.6600

Қосымша тауарлар

Сурет	Бөлім №	Сипаттама
	Mfr.#: IRF7779L2TRPBF OMO.#: OMO-IRF7779L2TRPBF	MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC
	Mfr.#: IRF7779L2TR1PBF OMO.#: OMO-IRF7779L2TR1PBF	MOSFET 150V 67A 11mOhm 97nC Qg
	Mfr.#: IRF7779L2TRPBF. OMO.#: OMO-IRF7779L2TRPBF--1190	Transistor Polarity:N Channel, Continuous Drain Current Id:67A, Drain Source Voltage Vds:150V, On Resistance Rds(on):0.009ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissi
	Mfr.#: IRF7779L2TR1PBF OMO.#: OMO-IRF7779L2TR1PBF-INFINEON-TECHNOLOGIES	IGBT Transistors MOSFET 150V 67A 11mOhm 97nC Qg
	Mfr.#: IRF7779L2TRPBF OMO.#: OMO-IRF7779L2TRPBF-INFINEON-TECHNOLOGIES	MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC

Қол жетімділік

Қор:: Available
Тапсырыс бойынша:: 2500
Саны енгізіңіз:

IRF7779L2TR1PBF ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.

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IRF7779L2TR1PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes