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IRF2903ZSPBF

IRF2903ZSPBF
Mfr. #:
IRF2903ZSPBF
Өндіруші:
Infineon / IR
Сипаттама:
MOSFET 30V 1 N-CH HEXFET 2.4mOhms 160nC
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IRF2903ZSPBF Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF2903ZSPBF DatasheetIRF2903ZSPBF Datasheet (P4-P6)IRF2903ZSPBF Datasheet (P7-P9)IRF2903ZSPBF Datasheet (P10-P11)
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
TO-263-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
30 V
Идентификатор - үздіксіз төгу тогы:
260 A
Rds On - ағызу көзіне қарсылық:
2.4 mOhms
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
160 nC
Pd - қуаттың шығыны:
290 W
Конфигурация:
Бойдақ
Қаптама:
Түтік
Биіктігі:
4.4 mm
Ұзындығы:
10 mm
Транзистор түрі:
1 N-Channel
Ені:
9.25 mm
Бренд:
Infineon / IR
Өнім түрі:
MOSFET
Зауыттық буманың саны:
1000
Ішкі санат:
MOSFETs
Бөлім # Бүркеншік аттар:
SP001569980
Бірлік салмағы:
0.139332 oz
Tags
IRF2903ZS, IRF2903, IRF290, IRF29, IRF2, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
IRF2903ZSPBF N-channel MOSFET Transistor, 235 A, 30 V, 3-Pin D2PAK
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 75A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ment14 APAC
MOSFET, N D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:260A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:231W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:231mJ; Current Id Max:75A; Fall Time tf:37ns; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Package / Case:D2-PAK; Power Dissipation Pd:231W; Power Dissipation Pd:231W; Pulse Current Idm:1020A; Rise Time:100ns; Storage Temperature Max:175°C; Storage Temperature Min:-55°C; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:0.021V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
***ical
Trans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***emi
N-Channel Logic Level PowerTrench® MOSFET, 30V, 80A, 2.1mΩ
***r Electronics
Power Field-Effect Transistor, 34A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***i-Key
MOSFET N-CH 30V 75A D2PAK
***Yang
TO-263AB,SINGLE,NCH,30V,0.0023 OHM LOGIC LEVEL DENSE TRENCH - Bulk
*** Electronic Components
MOSFET N-Ch LL UltraFET PWM Optimized
***nell
MOSFET, N, SMD, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipa
***ineon SCT
30V, N-Ch, 2.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
***ical
Trans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 30V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 30V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 30V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.
***i-Key
MOSFET N-CH 30V 75A D2PAK
*** Electronic Components
MOSFET N-Ch UltraFET Logic Level
***et
TO263AB,SINGLE,NCH,30V,0,0032 OHM LOGIC LVL PWM OPT ULTR
*** Electronics
MOSFET N-CH 25V 80A TO-263
***i-Key
N-CHANNEL POWER MOSFET
***hard Electronics
Power Field-Effect Transistor, 80A I(D), 25V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
***el Nordic
Contact for details
***emi
N-Channel PowerTrench® MOSFET, 30V, 93A, 5.7mΩ
***ure Electronics
N-Channel 30 V 5.7 mOhm Surface Mount PowerTrench® Mosfet - TO-263AB
***et Europe
Trans MOSFET N-CH 30V 19A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N CH, 30V, 93A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:93A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0049ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:80W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Бөлім № Mfg. Сипаттама Қор Бағасы
IRF2903ZSPBF
DISTI # V99:2348_13890430		Infineon Technologies AGTrans MOSFET N-CH Si 30V 235A 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant		7
  • 100:$2.5810
  • 25:$2.7210
  • 10:$2.9530
  • 1:$3.2800
IRF2903ZSPBF
DISTI # IRF2903ZSPBF-ND		Infineon Technologies AGMOSFET N-CH 30V 75A D2PAK
RoHS: Compliant
Min Qty: 300
Container: Tube		Limited Supply - Call
    IRF2903ZSPBFInternational RectifierPower Field-Effect Transistor, 75A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		250
    • 1000:$1.9100
    • 500:$2.0100
    • 100:$2.1000
    • 25:$2.1900
    • 1:$2.3500
    IRF2903ZSPBF
    DISTI # 942-IRF2903ZSPBF    		Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 2.4mOhms 160nC
    RoHS: Compliant    		0
      IRF2903ZSPBF
      DISTI # IRF2903ZSPBF      		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,260A,290W,D2PAK82
      • 1:$2.2800
      • 3:$2.0800
      • 10:$1.7200
      • 100:$1.4300
      IRF2903ZSPBFInternational Rectifier 
      RoHS: Compliant      		Europe - 550
        IRF2903ZSPBF
        DISTI # 1551909        		Infineon Technologies AGMOSFET, N D2-PAK
        RoHS: Compliant        		0
        • 1:$5.3000
        • 10:$4.9500
        • 100:$4.3600
        • 250:$4.0500
        • 500:$3.8400
        • 1000:$3.6500
        IRF2903ZSPBF
        DISTI # C1S322000520929        		Infineon Technologies AGMOSFETs
        RoHS: Compliant        		7
        • 1:$3.4370
        Сурет Бөлім № Сипаттама
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        		 MOSFET MOSFT 30V 260A 2.4mOhm 160nC Qg
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        OMO.#: OMO-IRF2903ZLPBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 30V 75A TO-262
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        		 MOSFET N-CH 75V 160A D2PAK7
        IRF2907ZSPBF,IRF2907ZS

        Mfr.#: IRF2907ZSPBF,IRF2907ZS

        OMO.#: OMO-IRF2907ZSPBF-IRF2907ZS-1190

        		 Жаңа және түпнұсқа
        IRF2907ZSTRLPBF,IRF2907Z

        Mfr.#: IRF2907ZSTRLPBF,IRF2907Z

        OMO.#: OMO-IRF2907ZSTRLPBF-IRF2907Z-1190

        		 Жаңа және түпнұсқа
        IRF2903ZPBF

        Mfr.#: IRF2903ZPBF

        OMO.#: OMO-IRF2903ZPBF-INFINEON-TECHNOLOGIES

        		 Darlington Transistors MOSFET MOSFT 30V 260A 2.4mOhm 160nC Qg
        IRF2903ZSPBF

        Mfr.#: IRF2903ZSPBF

        OMO.#: OMO-IRF2903ZSPBF-INFINEON-TECHNOLOGIES

        		 IGBT Transistors MOSFET 30V 1 N-CH HEXFET 2.4mOhms 160nC
        Қол жетімділік
        Қор:
        Available
        Тапсырыс бойынша:
        3000
        Саны енгізіңіз:
        IRF2903ZSPBF ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
        -ден бастаңыз
        Ең жаңа өнімдер
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