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BSC097N06NSATMA1

BSC097N06NSATMA1
Mfr. #:
BSC097N06NSATMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET N-Ch 60V 46A TDSON-8
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
BSC097N06NSATMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BSC097N06NSATMA1 DatasheetBSC097N06NSATMA1 Datasheet (P4-P6)BSC097N06NSATMA1 Datasheet (P7-P9)BSC097N06NSATMA1 Datasheet (P10)
ECAD Model:
Көбірек ақпарат:
BSC097N06NSATMA1 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
TDSON-8
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
60 V
Идентификатор - үздіксіз төгу тогы:
46 A
Rds On - ағызу көзіне қарсылық:
8 mOhms
Vgs th - Gate-Source шекті кернеуі:
2.1 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
15 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
36 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
OptiMOS
Қаптама:
Ролик
Биіктігі:
1.27 mm
Ұзындығы:
5.9 mm
Серия:
OptiMOS 5
Транзистор түрі:
1 N-Channel
Ені:
5.15 mm
Бренд:
Infineon Technologies
Форвард өткізгіштік - Мин:
24 S
Күз уақыты:
2 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
2 ns
Зауыттық буманың саны:
5000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
10 ns
Қосудың әдеттегі кешігу уақыты:
6 ns
Бөлім # Бүркеншік аттар:
BSC097N06NS SP001067004
Бірлік салмағы:
0.003527 oz
Tags
BSC097, BSC09, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 60 V 9.7 mOhm 12 nC OptiMOS™ Power Mosfet - TDSON-8
***ark
Mosfet, N-Ch, 60V, 46A, Pg-Tdson-8; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:46A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V Rohs Compliant: Yes |Infineon BSC097N06NSATMA1
***ineon SCT
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS
***nell
MOSFET, N-CH, 60V, 46A, PG-TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 46A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.008ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 36W; Transistor Case Style: PG-TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***emi
Single N-Channel Power MOSFET 60V, 50A, 9.3mΩ Power MOSFET 60V, 50A, 9.3 mOhm, Single N-Channel, u8FL, Logic Level
***sible Micro
Transistor, MOSFET, N-CH, 60V, 13A, WDFN, SMD
***ical
Trans MOSFET N-CH 60V 13A 8-Pin WDFN EP T/R
*** Stop Electro
Power Field-Effect Transistor, 60V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***Yang
T6 60V NCH LL IN U8FL - Tape and Reel
***ark
Mosfet, N-Ch, 60V, 50A, Wdfn-8; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.008Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Rohs Compliant: Yes
***ure Electronics
Single N-Channel 60 V 8.8 mOhm 36 nC OptiMOS™ Power Mosfet - TO-252-3
*** Source Electronics
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK / OptiMOS(TM)3 Power-Transistor
***icontronic
Power Field-Effect Transistor, 50A I(D), 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO252-3, RoHS
***nell
MOSFET, N-CH, 60V, 50A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0071ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***emi
N-Channel Power MOSFET, Logic Level, QFET®, 60 V, 52.4 A, 21 mΩ, D2PAK
***ure Electronics
FQB50N06L Series 60 V 52.4 A 21 mOhm SMT N-Channel QFET Mosfet - D2PAK-3
***ical
Trans MOSFET N-CH 60V 52.4A 3-Pin (2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N CH, 60V, 52.4A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 52.4A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.017ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 121W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***ineon SCT
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
***ical
Trans MOSFET N-CH Si 60V 43A Automotive 3-Pin(2+Tab) DPAK Tube
***ure Electronics
Single N-Channel 60 V 15.8 mOhm 22 nC Automotive HEXFET® Power Mosfet - DPAK
***SIT Distribution GmbH
Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
***ark
MOSFET, N CH, 60V, 43A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0126ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:71W; No. of Pins:3 ;RoHS Compliant: Yes
***emi
PowerTrench® MOSFET, N-Channel, 60 V,50 A, 10 mΩ
***ical
Trans MOSFET N-CH 60V 50A Automotive 3-Pin(2+Tab) DPAK T/R
***el Electronic
FAIRCHILD SEMICONDUCTOR FDD86580_F085 MOSFET Transistor, N Channel, 50 A, 60 V, 0.0078 ohm, 10 V, 3.6 VNew
***ure Electronics
Single N-Channel 55 V 0.022 Ohm 48 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH 55V 47A 3-Pin (2+Tab) D2PAK T/R
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 110 W
***eco
IRLZ44NSTRLPBF,MOSFET, 55V, 47 A, 22 MOHM, 32 NC QG, LOGIC L
***SIT Distribution GmbH
Power Field-Effect Transistor, 47A I(D), 55V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
***ark
Transistor Polarity:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:47A; On Resistance Rds(On):0.022Ohm; Transistor Mounting:Surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: Yes |Infineon IRLZ44NSTRLPBF.
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Бөлім № Mfg. Сипаттама Қор Бағасы
BSC097N06NSATMA1
DISTI # V72:2272_06384807		Infineon Technologies AGTrans MOSFET N-CH 60V 46A 8-Pin TDSON T/R
RoHS: Compliant		4575
  • 3000:$0.3684
  • 1000:$0.3721
  • 500:$0.4479
  • 250:$0.4984
  • 100:$0.5470
  • 25:$0.6311
  • 10:$0.6755
  • 1:$0.7455
BSC097N06NSATMA1
DISTI # BSC097N06NSATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 46A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4970In Stock
  • 1000:$0.4249
  • 500:$0.5382
  • 100:$0.6940
  • 10:$0.8780
  • 1:$0.9900
BSC097N06NSATMA1
DISTI # BSC097N06NSATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 46A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4970In Stock
  • 1000:$0.4249
  • 500:$0.5382
  • 100:$0.6940
  • 10:$0.8780
  • 1:$0.9900
BSC097N06NSATMA1
DISTI # BSC097N06NSATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 46A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.3658
BSC097N06NSATMA1
DISTI # 31084170		Infineon Technologies AGTrans MOSFET N-CH 60V 46A 8-Pin TDSON T/R
RoHS: Compliant		4575
  • 3000:$0.3684
  • 1000:$0.3721
  • 500:$0.4479
  • 250:$0.4984
  • 100:$0.5470
  • 25:$0.6310
  • 23:$0.6755
BSC097N06NSATMA1
DISTI # BSC097N06NSATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 46A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC097N06NSATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.2879
  • 10000:$0.2769
  • 20000:$0.2669
  • 30000:$0.2579
  • 50000:$0.2539
BSC097N06NSATMA1
DISTI # 97Y1250		Infineon Technologies AGMOSFET, N-CH, 60V, 46A, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:46A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.008ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes0
  • 1:$0.8300
  • 10:$0.7000
  • 25:$0.6460
  • 50:$0.5920
  • 100:$0.5380
  • 250:$0.5070
  • 500:$0.4760
  • 1000:$0.3750
BSC097N06NSATMA1
DISTI # 726-BSC097N06NSATMA1		Infineon Technologies AGMOSFET N-Ch 60V 46A TDSON-8
RoHS: Compliant		4602
  • 1:$0.8300
  • 10:$0.7000
  • 100:$0.5380
  • 500:$0.4760
  • 1000:$0.3750
  • 5000:$0.3330
BSC097N06NS
DISTI # 726-BSC097N06NS		Infineon Technologies AGMOSFET N-Ch 60V 46A TDSON-8
RoHS: Compliant		0
  • 1:$0.8300
  • 10:$0.7000
  • 100:$0.5380
  • 500:$0.4760
  • 1000:$0.3750
  • 5000:$0.3330
BSC097N06NSATMA1Infineon Technologies AGSingle N-Channel 60 V 9.7 mOhm 12 nC OptiMOS Power Mosfet - TDSON-8
RoHS: Compliant		5000Reel
  • 5000:$0.3100
BSC097N06NSATMA1
DISTI # 1109115P		Infineon Technologies AGMOSFET N-CHAN OPTIMOS 60V 46A TDSON8, RL825
  • 50:£0.4590
  • 250:£0.3890
  • 500:£0.3440
  • 1250:£0.2870
BSC097N06NSATMA1
DISTI # BSC097N06NSATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,60V,46A,36W,PG-TDSON-82250
  • 1:$0.6244
  • 3:$0.5530
  • 10:$0.4649
  • 100:$0.4167
  • 1000:$0.3880
BSC097N06NSATMA1
DISTI # 2617474		Infineon Technologies AGMOSFET, N-CH, 60V, 46A, PG-TDSON-8
RoHS: Compliant		0
  • 1:$1.5800
  • 10:$1.4000
  • 100:$1.1100
  • 500:$0.8580
  • 1000:$0.6780
BSC097N06NSATMA1
DISTI # 2617474		Infineon Technologies AGMOSFET, N-CH, 60V, 46A, PG-TDSON-8
RoHS: Compliant		0
  • 5:£0.6020
  • 25:£0.4640
  • 100:£0.4110
  • 250:£0.3930
  • 500:£0.3470
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Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
1992
Саны енгізіңіз:
BSC097N06NSATMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
0,82 $
0,82 $
10
0,70 $
7,00 $
100
0,54 $
53,80 $
500
0,48 $
238,00 $
1000
0,38 $
375,00 $
2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
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