OMO ElectronicOMO Electronic
Expand menu
Сәлем, жүйеге кіріңізМенің аккаунтым
0 Арба

STW35N60DM2

STW35N60DM2
Mfr. #:
STW35N60DM2
Өндіруші:
STMicroelectronics
Сипаттама:
MOSFET N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-247 package
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
STW35N60DM2 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
STW35N60DM2 Көбірек ақпарат STW35N60DM2 Product Details
Өнім атрибуты
Төлсипат мәні
Өндіруші:
STMicroelectronics
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
Тесік арқылы
Пакет/қорап:
TO-247-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
600 V
Идентификатор - үздіксіз төгу тогы:
28 A
Rds On - ағызу көзіне қарсылық:
110 mOhms
Vgs th - Gate-Source шекті кернеуі:
3 V
Vgs - Шлюз көзі кернеуі:
25 V
Qg - қақпа заряды:
54 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
210 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
MDmesh
Серия:
STW35N60DM2
Бренд:
STMicroelectronics
Күз уақыты:
10.7 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
17 ns
Зауыттық буманың саны:
600
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
68 ns
Қосудың әдеттегі кешігу уақыты:
21.2 ns
Бірлік салмағы:
1.340411 oz
Tags
STW35N60, STW35, STW3, STW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-247 package
***ure Electronics
N-Channel 600 V 110 mOhm Flange Mount Mdmesh DM2 Power Mosfet - TO-247
***ark
Mosfet, N-Ch, 600V, 28A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.094Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
***icroelectronics
N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-247 package
***ure Electronics
N-Channel 600 V 93 mOhm Flange Mount MDmesh DM2 Power Mosfet - TO-247
***ark
Mosfet, N-Ch, 600V, 34A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.085Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
***icroelectronics
N-channel 600 V, 0.092 Ohm typ., 31.5 A MDmesh II Power MOSFET in TO-247 package
***ource
N channel 600 V 0 092 ¦¸ 29 A MDmesh II Power MOSFET TO 220 TO 247 TO 220FP
*** Source Electronics
Trans MOSFET N-CH 600V 31.5A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 600V 29A TO-247
***ure Electronics
N-Channel 600 V 105 mOhm Flange Mount MDmesh™ II Power Mosfet - TO-247
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:29A; On Resistance Rds(On):0.092Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Product Range:- Rohs Compliant: Yes
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 29A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***el Electronic
ANALOG DEVICES - AD633ARZ - Divider/Multiplier IC, 3 AMPs, 1 MHz Small Signal BW, 20 V/µs slew, 8 V to 18 V supply, SOIC-8
***icroelectronics
N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-247 package
***ark
Mosfet, N-Ch, 600V, 24A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.11Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Rohs Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 24A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***emi
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 29 A, 125 mΩ, TO-247
***nell
MOSFET, N-CH, 600V, 29A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 29A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.102ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V;
***r Electronics
Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***el Electronic
Aluminum Electrolytic Capacitors 100μF Radial, Can - SMD ±20% Tape & Reel (TR) TG 0.402 10.20mm Surface Mount Automotive 150mA CAP ALUM 100UF 20% 63V SMD
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET II MOSFET series. Noted by the “E” part number suffix, this family helps manage EMI issues and allows for easier designimplementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series.
***emi
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 35 A, 98 mΩ, TO-247
***r Electronics
Power Field-Effect Transistor, 35A I(D), 600V, 0.098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***ment14 APAC
MOSFET, N CH, 600V, 35A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.079ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:312.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:105A
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***ure Electronics
Single N-Channel 600 V 105 mOhm 60 nC CoolMOS™ Power Mosfet - TO-247-3
***ark
Mosfet, Aec-Q101, N-Ch, 600V, 31A, 255W Rohs Compliant: Yes
***ical
Trans MOSFET N-CH 600V 31A Automotive 3-Pin(3+Tab) TO-247 Tube
***nell
MOSFET, AEC-Q101, N-CH, 600V, 31A, 255W; Transistor Polarity: N Channel; Continuous Drain Current Id: 31A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.09ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 255W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS Series; Automotive Qualification Standard: AEC-Q101; SVHC: No SVHC (15-Jan-2019)
***ineon SCT
Infineon's CoolMOS™ CPA Superjunction MOSFET is specially designed for DC-DC converters for automotive application, PG-TO247-3, RoHS
***ineon
Summary of Features: Lowest figure-of-merit RON x Qg; Ultra low gate charge; Extreme dv/dt rated; High peak current capability; Automotive AEC Q101 qualified; Green package (RoHS compliant); CoolMOS CPA is specially designed for:; DC/DC converters for Automotive Application
MDmesh DM2 Power MOSFETs
STMicroelectronics MDmesh DM2 series are ST's latest fast recovery diode series of 600V power MOSFETs optimized for ZVS phase-shift bridge topologies. They feature a very low recovery charge and time (Qrr, trr) and shows 20% lower RDS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Бөлім № Mfg. Сипаттама Қор Бағасы
STW35N60DM2
DISTI # 31348246		STMicroelectronicsTrans MOSFET N-CH 600V 28A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		14
  • 4:$2.5260
STW35N60DM2
DISTI # 497-16356-5-ND		STMicroelectronicsMOSFET N-CH 600V 28A
RoHS: Compliant
Min Qty: 1
Container: Tube		579In Stock
  • 2520:$2.7064
  • 510:$3.3779
  • 120:$3.9681
  • 30:$4.5787
  • 10:$4.8430
  • 1:$5.3900
STW35N60DM2
DISTI # V36:1790_13795935		STMicroelectronicsTrans MOSFET N-CH 600V 28A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
  • 600000:$2.2580
  • 300000:$2.2620
  • 60000:$2.8870
  • 6000:$4.1580
  • 600:$4.3800
STW35N60DM2
DISTI # STW35N60DM2		STMicroelectronicsTrans MOSFET N-CH 600V 28A 3-Pin TO-247 Tube (Alt: STW35N60DM2)
RoHS: Compliant
Min Qty: 600
Container: Tube		Asia - 0
  • 30000:$2.3684
  • 15000:$2.4324
  • 6000:$2.5000
  • 3000:$2.6087
  • 1800:$2.7273
  • 1200:$2.8571
  • 600:$3.0000
STW35N60DM2
DISTI # STW35N60DM2		STMicroelectronicsTrans MOSFET N-CH 600V 28A 3-Pin TO-247 Tube - Rail/Tube (Alt: STW35N60DM2)
RoHS: Not Compliant
Min Qty: 600
Container: Tube		Americas - 0
  • 6000:$2.3900
  • 3600:$2.4900
  • 2400:$2.5900
  • 1200:$2.6900
  • 600:$2.8900
STW35N60DM2
DISTI # STW35N60DM2		STMicroelectronicsTrans MOSFET N-CH 600V 28A 3-Pin TO-247 Tube (Alt: STW35N60DM2)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€2.1900
  • 500:€2.2900
  • 100:€2.3900
  • 50:€2.4900
  • 25:€2.5900
  • 10:€2.6900
  • 1:€2.9900
STW35N60DM2
DISTI # 79Y9478		STMicroelectronicsMOSFET, N-CH, 600V, 28A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:28A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.094ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes486
  • 500:$3.2400
  • 250:$3.6200
  • 100:$3.8200
  • 50:$4.0100
  • 25:$4.2100
  • 10:$4.4000
  • 1:$5.1800
STW35N60DM2
DISTI # 511-STW35N60DM2		STMicroelectronicsMOSFET N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-247 package
RoHS: Compliant		481
  • 1:$5.1300
  • 10:$4.3600
  • 100:$3.7800
  • 250:$3.5800
  • 500:$3.2100
  • 1000:$2.7100
  • 2500:$2.5700
STW35N60DM2
DISTI # 1116482P		STMicroelectronicsMOSFET N-CH 600V 28A MDMESH DM2 TO-247, TU160
  • 600:£2.3300
  • 300:£2.5950
  • 90:£2.8750
  • 30:£3.1550
STW35N60DM2
DISTI # STW35N60DM2		STMicroelectronicsTransistor: N-MOSFET,unipolar,600V,17A,210W,TO24730
  • 30:$3.8100
  • 10:$4.2400
  • 3:$5.2800
  • 1:$6.1300
STW35N60DM2STMicroelectronicsPower Field-Effect Transistor
RoHS: Compliant		150
    STW35N60DM2
    DISTI # TMOS1096    		STMicroelectronicsN-CH 600V 28A 94mOhm TO247
    RoHS: Compliant    		Stock DE - 0Stock HK - 0Stock US - 0
    • 600:$2.8200
    STW35N60DM2
    DISTI # 2531118    		STMicroelectronicsMOSFET, N-CH, 600V, 28A, TO-247
    RoHS: Compliant    		486
    • 2520:$4.0900
    • 510:$5.1000
    • 120:$5.9800
    • 30:$6.9000
    • 10:$7.3000
    • 1:$8.1200
    STW35N60DM2
    DISTI # 2531118    		STMicroelectronicsMOSFET, N-CH, 600V, 28A, TO-247476
    • 500:£2.2200
    • 250:£2.4800
    • 100:£2.6200
    • 10:£3.0200
    • 1:£4.3800
    Сурет Бөлім № Сипаттама
    IR4427STRPBF

    Mfr.#: IR4427STRPBF

    OMO.#: OMO-IR4427STRPBF

    		 Gate Drivers Dual Lw Sd Drvr
    FAN3224TMX

    Mfr.#: FAN3224TMX

    OMO.#: OMO-FAN3224TMX

    		 Gate Drivers dual 4A with non-inverting TTL
    P0102BL 5AA4

    Mfr.#: P0102BL 5AA4

    OMO.#: OMO-P0102BL-5AA4

    		 SCRs 0.25 Amp 200 Volt
    STTH20R04FP

    Mfr.#: STTH20R04FP

    OMO.#: OMO-STTH20R04FP

    		 Rectifiers High Effecientcy Rectifier
    FDN359BN

    Mfr.#: FDN359BN

    OMO.#: OMO-FDN359BN

    		 MOSFET 30V N-Channel PowerTrench MOSFET
    S320

    Mfr.#: S320

    OMO.#: OMO-S320

    		 Schottky Diodes & Rectifiers 3A, 200V, Schottky Rectifier
    SDUFD51-008G

    Mfr.#: SDUFD51-008G

    OMO.#: OMO-SDUFD51-008G

    		 USB Flash Drives 8GB USB 2.0 Flash Drive
    L7812CV

    Mfr.#: L7812CV

    OMO.#: OMO-L7812CV

    		 Linear Voltage Regulators 12V 1.5A Positive
    TPS563201DDCT

    Mfr.#: TPS563201DDCT

    OMO.#: OMO-TPS563201DDCT

    		 Switching Voltage Regulators 4.5V to 17V Input 3A Output
    STP36N60M6

    Mfr.#: STP36N60M6

    OMO.#: OMO-STP36N60M6

    		 MOSFET N-channel 600 V, 0.085 Ohm typ., 30 A MDmesh M6 Power MOSFET in a TO-220 package
    Қол жетімділік
    Қор:
    481
    Тапсырыс бойынша:
    2464
    Саны енгізіңіз:
    STW35N60DM2 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
    Анықтамалық баға (USD)
    Саны
    Тауар өлшемінің бағасы
    Қосымша. Бағасы
    1
    5,13 $
    5,13 $
    10
    4,36 $
    43,60 $
    100
    3,78 $
    378,00 $
    250
    3,58 $
    895,00 $
    500
    3,21 $
    1 605,00 $
    1000
    2,71 $
    2 710,00 $
    2500
    2,57 $
    6 425,00 $
    2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
    -ден бастаңыз
    Ең жаңа өнімдер
    • MDmesh™ M6 Series 600 V Power MOSFETs
      MDmesh™ M6 Series 600 V Power MOSFETs
      STMicroelectronics’ MDmesh M6 series power MOSFETs in PowerFLAT 5 mm x 6 mm high voltage packages have reduced switching loss and low gate input resistance.
    • Compare STW35N60DM2
      Compare STW35N60DM2
      STW35N60C3 vs STW35N60DM2 vs STW35N60M2EP
    • LDCL015 Series
      LDCL015 Series
      STMicroelectronics' LDCL015 series are ultra-low drop, capless linear regulators with low noise and low current consumption.
    • VNI8200XP Monolithic 8-Channel Driver
      VNI8200XP Monolithic 8-Channel Driver
      STMicroelectronics' monolithic octal driver IC has low supply current and integrated protection features that prevent against overload.
    • Ultra-Low Power Arm® Cortex®-M4 MCUs
      Ultra-Low Power Arm® Cortex®-M4 MCUs
      STMicroelectronics' ultra-low power Arm® Cortex®-M4 MCUs are available in low-pin-count-packages ranging from 32-pin LQFP to 64-pin BGA including 36-pin WLCSP.
    • LSM303C e-compass Accelerometer
      LSM303C e-compass Accelerometer
      STMicroelectronics' LSM303C accelerometers are tiny which helps to save board space. Used for advanced navigation and motion sensitive applications.
    More Newest Products
    Top