BSZ520N15NS3GATMA1

BSZ520N15NS3GATMA1
Mfr. #:
BSZ520N15NS3GATMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET N-CH 150V 21A 8-TSDSON
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
BSZ520N15NS3GATMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
BSZ520N15NS3GATMA1 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Tags
BSZ520N15NS3G, BSZ520N15NS3, BSZ52, BSZ5, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 2, N-Channel MOSFET, 21 A, 150 V, 8-Pin TSDSON Infineon BSZ520N15NS3GATMA1
***ure Electronics
Single N-Channel 150 V 52 mOhm 8.7 nC OptiMOS™ Power Mosfet - TSDSON-8
***p One Stop Japan
Trans MOSFET N-CH 150V 21A Automotive 8-Pin TSDSON EP T/R
***et
Trans MOSFET N-CH 150V 21A 8-Pin TSDSON T/R
***i-Key
MOSFET N-CH 150V 21A 8-TSDSON
***ronik
N-CH 150V 21A 52mOhm TSDSON
***ical
BSZ520N15NS3 G
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:150V; On Resistance Rds(On):0.042Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:57W; No. Of Pins:8Pins Rohs Compliant: Yes
***ment14 APAC
MOSFET, N-CH, 150V, 21A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:57W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
***ineon
The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
Resonant Wireless Charging - Consumer Applications
Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With the best figure of merit (FOM) for gate charge times, RDS(on) and Coss they enable 6.78MHz inverter designs. Superior power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.
Бөлім № Mfg. Сипаттама Қор Бағасы
BSZ520N15NS3GATMA1
DISTI # V72:2272_06384637
Infineon Technologies AGTrans MOSFET N-CH 150V 21A Automotive 8-Pin TSDSON EP T/R
RoHS: Compliant
495
  • 250:$0.7723
  • 100:$0.8581
  • 25:$1.0006
  • 10:$1.1117
  • 1:$1.4274
BSZ520N15NS3GATMA1
DISTI # V36:1790_06384637
Infineon Technologies AGTrans MOSFET N-CH 150V 21A Automotive 8-Pin TSDSON EP T/R
RoHS: Compliant
0
  • 5000:$0.4666
BSZ520N15NS3GATMA1
DISTI # BSZ520N15NS3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 150V 21A 8-TSDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
47542In Stock
  • 1000:$0.6499
  • 500:$0.8232
  • 100:$0.9965
  • 10:$1.2780
  • 1:$1.4300
BSZ520N15NS3GATMA1
DISTI # BSZ520N15NS3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 150V 21A 8-TSDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
47542In Stock
  • 1000:$0.6499
  • 500:$0.8232
  • 100:$0.9965
  • 10:$1.2780
  • 1:$1.4300
BSZ520N15NS3GATMA1
DISTI # BSZ520N15NS3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 150V 21A 8-TSDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
45000In Stock
  • 10000:$0.5384
  • 5000:$0.5594
BSZ520N15NS3GATMA1
DISTI # 32684971
Infineon Technologies AGTrans MOSFET N-CH 150V 21A Automotive 8-Pin TSDSON EP T/R
RoHS: Compliant
15000
  • 5000:$0.8281
BSZ520N15NS3GATMA1
DISTI # 33699211
Infineon Technologies AGTrans MOSFET N-CH 150V 21A Automotive 8-Pin TSDSON EP T/R
RoHS: Compliant
5010
  • 5000:$0.4910
BSZ520N15NS3GATMA1
DISTI # 32671251
Infineon Technologies AGTrans MOSFET N-CH 150V 21A Automotive 8-Pin TSDSON EP T/R
RoHS: Compliant
689
  • 124:$0.6215
BSZ520N15NS3GATMA1
DISTI # 33362627
Infineon Technologies AGTrans MOSFET N-CH 150V 21A Automotive 8-Pin TSDSON EP T/R
RoHS: Compliant
495
  • 12:$1.4274
BSZ520N15NS3GATMA1
DISTI # 47W3368
Infineon Technologies AGTrans MOSFET N-CH 150V 21A 8-Pin TSDSON T/R - Bulk (Alt: 47W3368)
RoHS: Compliant
Min Qty: 5
Container: Bulk
Americas - 0
    BSZ520N15NS3GATMA1
    DISTI # SP000607022
    Infineon Technologies AGTrans MOSFET N-CH 150V 21A 8-Pin TSDSON T/R (Alt: SP000607022)
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape and Reel
    Europe - 0
    • 50000:€0.4669
    • 30000:€0.5019
    • 20000:€0.5439
    • 10000:€0.5939
    • 5000:€0.7259
    BSZ520N15NS3GXT
    DISTI # BSZ520N15NS3GATMA1
    Infineon Technologies AGTrans MOSFET N-CH 150V 21A 8-Pin TSDSON EP - Tape and Reel (Alt: BSZ520N15NS3GATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel
    Americas - 0
    • 50000:$0.5089
    • 30000:$0.5179
    • 20000:$0.5359
    • 10000:$0.5559
    • 5000:$0.5769
    BSZ520N15NS3GATMA1
    DISTI # 47W3368
    Infineon Technologies AGMOSFET, N CHANNEL, 150V, 21A, 8TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.042ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes8136
    • 1:$0.4040
    • 10:$0.4040
    • 100:$0.4040
    • 500:$0.4040
    • 1000:$0.4040
    BSZ520N15NS3GATMA1.
    DISTI # 29AC2881
    Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.042ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:57W,No. of Pins:8Pins RoHS Compliant: Yes0
    • 50000:$0.5090
    • 30000:$0.5180
    • 20000:$0.5360
    • 10000:$0.5560
    • 1:$0.5770
    BSZ520N15NS3 G
    DISTI # 726-BSZ520N15NS3G
    Infineon Technologies AGMOSFET N-Ch 150V 21A TSDSON-8 OptiMOS 3
    RoHS: Compliant
    19754
    • 1:$1.3100
    • 10:$1.1200
    • 100:$0.8620
    • 500:$0.7620
    • 1000:$0.6010
    • 5000:$0.5330
    • 10000:$0.5130
    BSZ520N15NS3GATMA1
    DISTI # 726-BSZ520N15NS3GATM
    Infineon Technologies AGMOSFET N-Ch 150V 21A TSDSON-8 OptiMOS 3
    RoHS: Compliant
    5288
    • 1:$1.3100
    • 10:$1.1200
    • 100:$0.8620
    • 500:$0.7620
    • 1000:$0.6010
    • 5000:$0.5330
    • 10000:$0.5130
    BSZ520N15NS3GATMA1Infineon Technologies AGSingle N-Channel 150 V 52 mOhm 8.7 nC OptiMOS Power Mosfet - TSDSON-8
    RoHS: Not Compliant
    20000Reel
    • 5000:$0.5050
    BSZ520N15NS3GATMA1
    DISTI # 7545389P
    Infineon Technologies AGMOSFET N-CHANNEL 150V 21A TSDSON8, RL17846
    • 40:£0.5250
    • 20:£0.6000
    BSZ520N15NS3GATMA1
    DISTI # 7545389
    Infineon Technologies AGMOSFET N-CHANNEL 150V 21A TSDSON8, PK1018
    • 40:£0.5250
    • 20:£0.6000
    • 2:£0.9900
    BSZ520N15NS3GATMA1
    DISTI # XSFP00000155577
    Infineon Technologies AG 
    RoHS: Compliant
    10000 in Stock0 on Order
    • 10000:$0.6733
    • 5000:$0.7214
    BSZ520N15NS3GATMA1
    DISTI # XSKDRABV0051747
    Infineon Technologies AG 
    RoHS: Compliant
    9269 in Stock0 on Order
    • 9269:$0.6880
    • 5000:$0.7371
    BSZ520N15NS3GATMA1
    DISTI # 2212823
    Infineon Technologies AGMOSFET, N-CH, 150V, 21A, 8TDSON
    RoHS: Compliant
    19474
    • 5000:$0.8200
    • 1000:$0.9250
    • 500:$1.1800
    • 100:$1.3300
    • 10:$1.7300
    • 1:$2.0100
    BSZ520N15NS3GATMA1
    DISTI # 2212823
    Infineon Technologies AGMOSFET, N-CH, 150V, 21A, 8TDSON12947
    • 500:£0.5930
    • 250:£0.6320
    • 100:£0.6710
    • 10:£0.9280
    • 1:£1.1600
    Сурет Бөлім № Сипаттама
    BSZ520N15NS3 G

    Mfr.#: BSZ520N15NS3 G

    OMO.#: OMO-BSZ520N15NS3-G

    MOSFET N-Ch 150V 21A TSDSON-8 OptiMOS 3
    BSZ520N15NS3GATMA1

    Mfr.#: BSZ520N15NS3GATMA1

    OMO.#: OMO-BSZ520N15NS3GATMA1

    MOSFET N-Ch 150V 21A TSDSON-8 OptiMOS 3
    BSZ520N15NS3

    Mfr.#: BSZ520N15NS3

    OMO.#: OMO-BSZ520N15NS3-1190

    Жаңа және түпнұсқа
    BSZ520N15NS3G

    Mfr.#: BSZ520N15NS3G

    OMO.#: OMO-BSZ520N15NS3G-1190

    POWER FIELD-EFFECT TRANSISTOR, 21A I(D), 150V, 0.052OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
    BSZ520N15NS3GATMA1

    Mfr.#: BSZ520N15NS3GATMA1

    OMO.#: OMO-BSZ520N15NS3GATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 150V 21A 8-TSDSON
    BSZ520N15NS3GXT

    Mfr.#: BSZ520N15NS3GXT

    OMO.#: OMO-BSZ520N15NS3GXT-1190

    Trans MOSFET N-CH 150V 21A 8-Pin TSDSON EP - Tape and Reel (Alt: BSZ520N15NS3GATMA1)
    BSZ520N15NSS

    Mfr.#: BSZ520N15NSS

    OMO.#: OMO-BSZ520N15NSS-1190

    Жаңа және түпнұсқа
    BSZ520N15NS3 G

    Mfr.#: BSZ520N15NS3 G

    OMO.#: OMO-BSZ520N15NS3-G-126

    IGBT Transistors MOSFET N-Ch 150V 21A TSDSON-8 OptiMOS 3
    Қол жетімділік
    Қор:
    Available
    Тапсырыс бойынша:
    1000
    Саны енгізіңіз:
    BSZ520N15NS3GATMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
    Анықтамалық баға (USD)
    Саны
    Тауар өлшемінің бағасы
    Қосымша. Бағасы
    1
    0,61 $
    0,61 $
    10
    0,58 $
    5,76 $
    100
    0,55 $
    54,54 $
    500
    0,52 $
    257,55 $
    1000
    0,48 $
    484,80 $
    2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
    -ден бастаңыз
    Ең жаңа өнімдер
    • IR1167S SmartRectifier™ Control IC
      IR1167S SmartRectifier is a secondary side-driver IC designed to drive N-Channel power MOSFETs, used as synchronous rectifiers in isolated Flyback converters
    • XDPL8218 Voltage Flyback IC
      Infineon's XDPL8218 is a configurable single-stage SSR flyback controller with high power factor, standby power performance, and constant voltage output.
    • High Current IR3847 Gen3 SupIRBuck®
      IR3847 features a proprietary modulator scheme that reduces jitter by 90% compared to standard solutions
    • IR3823 Integrated Voltage Regulator
      Featuring constant frequency and virtually jitter-free operation with synchronization capability, the new device is well suited to noise-sensitive applications.
    • µIPM™ Integrated Power Module
      µIPM modules are the smallest in the industry, making them suitable for applications that are space-constrained
    Top