FCPF400N80ZL1

FCPF400N80ZL1
Mfr. #:
FCPF400N80ZL1
Өндіруші:
ON Semiconductor / Fairchild
Сипаттама:
MOSFET SF2 800V 400MOHM E TO220F
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
FCPF400N80ZL1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
ON Жартылай өткізгіш
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
Тесік арқылы
Пакет/қорап:
TO-220FP-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
800 V
Идентификатор - үздіксіз төгу тогы:
11 A
Rds On - ағызу көзіне қарсылық:
400 mOhms
Vgs th - Gate-Source шекті кернеуі:
4.5 V
Vgs - Шлюз көзі кернеуі:
20 V, 30 V
Qg - қақпа заряды:
43 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
35.7 W
Конфигурация:
Бойдақ
Сауда атауы:
SuperFET II
Қаптама:
Түтік
Биіктігі:
16.07 mm
Ұзындығы:
10.36 mm
Серия:
FCPF400N80ZL1
Транзистор түрі:
1 N-Channel
Ені:
4.9 mm
Бренд:
ON Semiconductor / Fairchild
Форвард өткізгіштік - Мин:
12 S
Күз уақыты:
2.6 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
12 ns
Зауыттық буманың саны:
1000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
51 ns
Қосудың әдеттегі кешігу уақыты:
20 ns
Бірлік салмағы:
0.080072 oz
Tags
FCPF40, FCPF4, FCPF, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, SUPERFET® II, 800 V, 14 A, 400 mΩ, TO-220
***ical
Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220F Tube
***r Electronics
Power Field-Effect Transistor, 11A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.
***icroelectronics
N-channel 800 V, 0.3 Ohm typ., 14 A MDmesh K5 Power MOSFET in TO-220FP package
***ure Electronics
N-Channel 800 V 14 A 0.375 Ohm SuperMESH 5 Power Mosfet - TO-220
***ical
Trans MOSFET N-CH 800V 14A 3-Pin(3+Tab) TO-220FP Tube
***enic
800V 14A 35W 375m´Î@10V7A 5V@100Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 14A I(D), 800V, 0.375ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***emi
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 650 V, 10.2 A, 380 mΩ, TO-220F
***ical
Trans MOSFET N-CH 650V 10.2A 3-Pin(3+Tab) TO-220F Rail
***r Electronics
Power Field-Effect Transistor, 10.2A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
SuperFET®II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
***icroelectronics
N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-220FP package
*** Source Electronics
Trans MOSFET N-CH 800V 12A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 800V 12A TO-220FP
***ure Electronics
N-Channel 800 V 0.37 Ohm Flange Mount SuperMESH™5 Power Mosfet - TO-220FP
***ark
MOSFET, N-CH, 800V, 12A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 12A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N-CH, 800V, 12A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.37ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 35W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh K5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
***va Crawler
N-channel 600 V, 0.45 Ohm typ., 13.5 A SuperMESH Power MOSFET in TO-220FP package
***et
Trans MOSFET N-CH 600V 13.5A 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
STP14NK60 Series 600 V 13.5 A 0.5 Ohm N-Ch Power MOSFET - TO-220FPAB
***r Electronics
Power Field-Effect Transistor, 13.5A I(D), 600V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 600V, 13.5A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.45ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7
***emi
Power MOSFET, N-Channel, QFET®, 800 V, 8 A, 1.55 Ω, TO-220F
***Yang
Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***enic
800V 8A 59W 1.55´Î@10V4A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
*** Stop Electro
Power Field-Effect Transistor, 8A I(D), 800V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.55ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:59W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:8A; No. of Transistors:1; Package / Case:TO-220F; Power Dissipation Pd:59W; Power Dissipation Pd:59W; Pulse Current Idm:32A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
Power MOSFET, N-Channel, QFET®, 800 V, 8 A, 1.55 Ω, TO-220F
***Yang
Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 8A I(D), 800V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Бөлім № Mfg. Сипаттама Қор Бағасы
FCPF400N80ZL1
DISTI # V99:2348_06359097
ON SemiconductorSUPERFET2, 400MOHM, 800V, ZENE126
  • 2000:$1.2610
  • 1000:$1.2660
  • 500:$1.5480
  • 100:$1.7870
  • 10:$2.2439
  • 1:$2.9359
FCPF400N80ZL1
DISTI # V36:1790_06359097
ON SemiconductorSUPERFET2, 400MOHM, 800V, ZENE0
  • 1000000:$1.1090
  • 500000:$1.1110
  • 100000:$1.2120
  • 10000:$1.3690
  • 1000:$1.3940
FCPF400N80ZL1
DISTI # FCPF400N80ZL1-ND
ON SemiconductorMOSFET N-CH 800V 11A TO220
RoHS: Compliant
Min Qty: 1000
Container: Tube
Temporarily Out of Stock
  • 1000:$1.3937
FCPF400N80ZL1
DISTI # 26637314
ON SemiconductorSUPERFET2, 400MOHM, 800V, ZENE37000
  • 1000:$1.3940
FCPF400N80ZL1
DISTI # 32826232
ON SemiconductorSUPERFET2, 400MOHM, 800V, ZENE1000
  • 1000:$1.2213
FCPF400N80ZL1
DISTI # 29068066
ON SemiconductorSUPERFET2, 400MOHM, 800V, ZENE126
  • 5:$2.9359
FCPF400N80ZL1
DISTI # FCPF400N80ZL1
ON SemiconductorTrans MOSFET N-CH 800V 11A 3-Pin TO-220F Tube (Alt: FCPF400N80ZL1)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1000:€1.0900
  • 50:€1.1900
  • 100:€1.1900
  • 500:€1.1900
  • 25:€1.2900
  • 10:€1.3900
  • 1:€1.5900
FCPF400N80ZL1
DISTI # FCPF400N80ZL1
ON SemiconductorTrans MOSFET N-CH 800V 11A 3-Pin TO-220F Tube - Rail/Tube (Alt: FCPF400N80ZL1)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 1000:$1.0900
  • 2000:$1.0900
  • 4000:$1.0900
  • 6000:$1.0900
  • 10000:$1.0900
FCPF400N80ZL1
DISTI # 40Y7278
ON SemiconductorSF2 800V 400MOHM E TO220F / TUBE0
  • 10000:$1.2800
  • 2500:$1.3500
  • 1000:$1.4200
  • 500:$1.6700
  • 100:$1.8500
  • 10:$2.2300
  • 1:$2.7500
FCPF400N80ZL1
DISTI # 512-FCPF400N80ZL1
ON SemiconductorMOSFET SF2 800V 400MOHM E TO220F
RoHS: Compliant
3008
  • 1:$2.6900
  • 10:$2.2800
  • 100:$1.8300
  • 500:$1.6000
  • 1000:$1.3200
  • 2000:$1.2300
  • 5000:$1.1900
Сурет Бөлім № Сипаттама
ST25RU3993-BQFT

Mfr.#: ST25RU3993-BQFT

OMO.#: OMO-ST25RU3993-BQFT

RFID Transponders RAIN UHF RFID Reader IC
IS25LP016D-JULE-TR

Mfr.#: IS25LP016D-JULE-TR

OMO.#: OMO-IS25LP016D-JULE-TR

NOR Flash 16Mb QSPI, 8-pin USON 2x3mm, RoHS, T&R
SIHA11N80E-GE3

Mfr.#: SIHA11N80E-GE3

OMO.#: OMO-SIHA11N80E-GE3

MOSFET 800V Vds 30V Vgs TO-220 FULLPAK
TPS62808YKAR

Mfr.#: TPS62808YKAR

OMO.#: OMO-TPS62808YKAR

Switching Voltage Regulators TINY HIGH FREQUENCY ULTRA-LOW IQ CONV.
12063C334JAT2A

Mfr.#: 12063C334JAT2A

OMO.#: OMO-12063C334JAT2A

Multilayer Ceramic Capacitors MLCC - SMD/SMT 25V .33uF X7R 1206 5%
STPSC20065D

Mfr.#: STPSC20065D

OMO.#: OMO-STPSC20065D

Schottky Diodes & Rectifiers 650 V power Schottky silicon carbide diode
12063C334JAT2A

Mfr.#: 12063C334JAT2A

OMO.#: OMO-12063C334JAT2A-AVX

Multilayer Ceramic Capacitors MLCC - SMD/SMT 1206 0.33uF 25volts X7R 5%
ST25RU3993-EVAL

Mfr.#: ST25RU3993-EVAL

OMO.#: OMO-ST25RU3993-EVAL-1190

ST25RU3993 reader IC evaluation board
STPSC20065D

Mfr.#: STPSC20065D

OMO.#: OMO-STPSC20065D-STMICROELECTRONICS

DIODE SCHOTTKY 650V 20A TO220AC
ST25RU3993-BQFT

Mfr.#: ST25RU3993-BQFT

OMO.#: OMO-ST25RU3993-BQFT-STMICROELECTRONICS

IC RFID READER 860-960MHZ 48QFN
Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
1985
Саны енгізіңіз:
FCPF400N80ZL1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
2,69 $
2,69 $
10
2,28 $
22,80 $
100
1,83 $
183,00 $
500
1,60 $
800,00 $
1000
1,32 $
1 320,00 $
2000
1,23 $
2 460,00 $
5000
1,19 $
5 950,00 $
10000
1,14 $
11 400,00 $
2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
-ден бастаңыз
Ең жаңа өнімдер
Top