IXFP20N85X

Mfr. #:: IXFP20N85X
Өндіруші:: IXYS
Сипаттама:: 850V/20A ULTRA JUNCTION X-CLASS
Өміршеңдік кезең:: Осы өндірушіден жаңа.
Деректер тізімі:: IXFP20N85X Деректер тізімі
Жеткізу:: DHL FedEx Ups TNT EMS
Төлем:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IXFP20N85X Datasheet IXFP20N85X Datasheet (P4-P6)
ECAD Model:

Өнім атрибуты
Төлсипат мәні

Tags: IXFP20, IXFP2, IXFP, IXF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IXFP20N85X Сипаттама

***enic: 850V 20A 540W 330m´Î@10V10A [email protected] N Channel TO-220-3 MOSFETs ROHS

***ical: Trans MOSFET N-CH 850V 20A 3-Pin(3+Tab) TO-220AB

***ure Electronics: MOSFET 850V Ultra Junction X-Class Pwr MOSFET

***emi: N-Channel Power MOSFET, QFET®, 600V, 23.5A, 240mΩ, TO-3P

*** Source Electronics: MOSFET N-CH 600V 23.5A TO-3P / Trans MOSFET N-CH 600V 23.5A 3-Pin(3+Tab) TO-3P Tube

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***ment14 APAC: MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:23.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):240mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:310W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:23.5A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:TO-3P; Power Dissipation Pd:310W; Power Dissipation Pd:310W; Pulse Current Idm:94A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

***p One Stop: Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220FM Bulk

***ark: Mosfet, N-Ch, 600V, 15A, To-220Fm Rohs Compliant: Yes

***nell: MOSFET, N-CH, 600V, 15A, TO-220FM; Transistor Polarity: N Channel; Continuous Drain Current Id: 15A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.26ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Pow

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 0.20pF 50volts C0G +/-0.1pF

***ineon SCT: Improved creepage distance for open frame power supplies, PG-TO220-3, RoHS

***nell: MOSFET, N-CH, 600V, 19.3A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 19.3A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.; Available until stocks are exhausted Alternative available

***ineon: Improved creepage distance for open frame power supplies | Summary of Features: Increased distance of 4.25mm between pins to meet wide creepage requirements; Package height and width identical with standard TO-220 FullPAK package | Benefits: Wider creepage between pins to avoid arcing even in polluted environment; Compatible with EN 60664-1 standard group III; Cost savings in creepage protection by removing additional efforts spent in alternative solutions today; Fully automated PCB assembly; FullPAK benefit of isolation | Target Applications: Consumer; PC power

***ure Electronics: Single N-Channel 800 V 310 mOhm 91 nC CoolMOS Power Mosfet - TO-220-3FP

***ical: Trans MOSFET N-CH 800V 16.7A 3-Pin(3+Tab) TO-220FP Tube

*** Stop Electro: Power Field-Effect Transistor, 16.7A I(D), 800V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: Mosfet, N-Ch, 800V, 16.7A, To-220Fp-3; Transistor Polarity:n Channel; Continuous Drain Current Id:16.7A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.25Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon: 800V CoolMOS CE is Infineons high performance device family offering 800 volts break down voltage. The CE targets consumer electronics applications as well as Lighting. The new 800V selection series specifically aims at LED applications. With this specific CoolMOS family, Infineon combines long experience as the leading superjunction MOSFET supplier with best-in-class innovation. | Summary of Features: Low specific on-state resistance (R DS(on)*A); Very low energy storage in output capacitance (E oss) @ 400V; Low gate charge (Q g); Field-proven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding price/performance; High reliability; Ease-of-use | Target Applications: LED lighting

***emi: N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 15 A, 260 mΩ, TO-220F

*** Stop Electro: Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***el Electronic: FAIRCHILD SEMICONDUCTOR FCPF260N60E Power MOSFET, N Channel, 15 A, 600 V, 0.22 ohm, 10 V, 2.5 V

***ment14 APAC: MOSFET, N-CH, 600V, 15A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.22ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:36W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***icroelectronics: N-Channel 600V - 0.25Ohm - 20A TO-220FP MDmesh™ POWER MOSFET

*** Source Electronics: Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 600V 20A TO220FP

***r Electronics: Power Field-Effect Transistor, 20A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: MOSFET, N CHANNEL, 600V, 20A, TO-220FP-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:-RoHS Compliant: Yes

Market price

Бөлім №	Mfg.	Сипаттама	Қор	Бағасы
IXFP20N85X DISTI # IXFP20N85X-ND	IXYS Corporation	850V/20A ULTRA JUNCTION X-CLASS RoHS: Compliant Min Qty: 1 Container: Tube	84In Stock	2500:$3.1920 500:$3.7848 100:$4.6740 50:$5.1300 10:$5.7000 1:$6.3800
IXFP20N85X DISTI # 747-IXFP20N85X	IXYS Corporation	MOSFET 850V Ultra Junction X-Class Pwr MOSFET RoHS: Compliant	89	1:$7.3300 10:$6.5500 25:$5.7000 50:$5.5900 100:$5.3800 250:$4.5900 500:$4.3500 1000:$3.6700 2500:$3.1500

Қосымша тауарлар

Сурет	Бөлім №	Сипаттама
	Mfr.#: IXFP26N50P3 OMO.#: OMO-IXFP26N50P3	MOSFET Polar3 HiPerFET Power MOSFET
	Mfr.#: IXFP20N50P3M OMO.#: OMO-IXFP20N50P3M	MOSFET Polar3 HiPerFET Power MOSFET
	Mfr.#: IXFP22N65X2M OMO.#: OMO-IXFP22N65X2M	MOSFET 650V/22A OVERMOLDED TO-220
	Mfr.#: IXFP26N30X3 OMO.#: OMO-IXFP26N30X3	MOSFET DISCMSFT NCHULTRJNCTX3CLASS
	Mfr.#: IXFP22N65X2 OMO.#: OMO-IXFP22N65X2-IXYS-CORPORATION	MOSFET N-CH 650V 22A TO-220
	Mfr.#: IXFP22N65X2M/SPA20N60C3 OMO.#: OMO-IXFP22N65X2M-SPA20N60C3-1190	Жаңа және түпнұсқа
	Mfr.#: IXFP20N50P3 OMO.#: OMO-IXFP20N50P3-IXYS-CORPORATION	MOSFET N-CH 500V 8A TO220
	Mfr.#: IXFP20N85X OMO.#: OMO-IXFP20N85X-IXYS-CORPORATION	850V/20A ULTRA JUNCTION X-CLASS
	Mfr.#: IXFP22N65X2M OMO.#: OMO-IXFP22N65X2M-IXYS-CORPORATION	MOSFET N-CH
	Mfr.#: IXFP24N60X OMO.#: OMO-IXFP24N60X-IXYS-CORPORATION	MOSFET N-CH 600V 24A TO220

Қол жетімділік

Қор:: Available
Тапсырыс бойынша:: 4000
Саны енгізіңіз:

IXFP20N85X ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.

Анықтамалық баға (USD)

Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы

1: ~~4,72 $~~; ~~4,72 $~~

10: ~~4,49 $~~; ~~44,89 $~~

100: ~~4,25 $~~; ~~425,25 $~~

500: ~~4,02 $~~; ~~2 008,15 $~~

1000: ~~3,78 $~~; ~~3 780,00 $~~

-ден бастаңыз

IXFP20 3
IXFP2 14
IXFP 85
IXF 1494

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More Newest Products

IXFP20N85X

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes