We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| BSP149L6327HTSA1 DISTI # BSP149L6327HTSA1TR-ND | Infineon Technologies AG | MOSFET N-CH 200V 660MA SOT-223 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP149L6327HTSA1 DISTI # BSP149L6327HTSA1CT-ND | Infineon Technologies AG | MOSFET N-CH 200V 660MA SOT-223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSP149L6327HTSA1 DISTI # BSP149L6327HTSA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 200V 660MA SOT-223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSP149L6327 DISTI # BSP149L6327 | Infineon Technologies AG | Trans MOSFET N-CH 200V 0.66A 4-Pin(3+Tab) SOT-223 T/R - Bulk (Alt: BSP149L6327) RoHS: Not Compliant Min Qty: 962 Container: Bulk | Americas - 0 |
|
| BSP149 L6327 DISTI # 726-BSP149L6327 | Infineon Technologies AG | MOSFET N-Ch 200V 660mA SOT-223-3 RoHS: Compliant | 0 | |
| BSP149L6327 | Infineon Technologies AG | Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 346043 |
|
| BSP149 L6327 | Infineon Technologies AG | 13433 | ||
| BSP149L6327 | Infineon Technologies AG | Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 4927 |
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: 149L6327 OMO.#: OMO-149L6327-1190 |
Жаңа және түпнұсқа |