AOT7N60

Mfr. #:: AOT7N60
Өндіруші:: Alpha & Omega Semiconductor Inc
Сипаттама:: MOSFET N-CH 600V 7A TO-220
Өміршеңдік кезең:: Осы өндірушіден жаңа.
Деректер тізімі:: AOT7N60 Деректер тізімі
Жеткізу:: DHL FedEx Ups TNT EMS
Төлем:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: AOT7N60 Datasheet
ECAD Model:

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Tags: AOT7N6, AOT7N, AOT7, AOT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

AOT7N60 Сипаттама

***ical: Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220

***el Electronic: IC OPAMP JFET 3MHZ 8DIP

*** Stop Electro: Power Field-Effect Transistor

***eco: Transistor MOSFET N Channel 600 Volt 6 Amp 3-Pin 3+ Tab TO-220 Tube

***icroelectronics: N-channel 600 V - 1 Ohm - 6 A - TO-220 Zener-Protected SuperMESH(TM) Power MOSFET

***id Electronics: Transistor MOSFET N-Ch. 6A/600V TO220 STP6NK60Z

***ark: MOSFET, N, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:110W RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***emi: N-Channel Power MOSFET, UniFETTM II, 500 V, 8 A, 850 mΩ, TO-220

***et Europe: Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220 Rail

*** Stop Electro: Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

***icroelectronics: N-Channel 700V - 1Ohm - 7.5A - TO-220 Zener-Protected SuperMesh(TM) POWER MOSFET

***ical: Trans MOSFET N-CH 700V 7.5A 3-Pin(3+Tab) TO-220AB Tube

***ponent Stockers USA: 7.5 A 700 V 1.2 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***r Electronics: Power Field-Effect Transistor, 7.5A I(D), 700V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N CH, 700V, 7.5A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 700V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 1; Available until stocks are exhausted

***ark: MOSFET, N CHANNEL, 700V, 7.5A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:700V; Continuous Drain Current Id:4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes

***itex: Transistor: N-MOSFET; unipolar; 650V; 4.5A; 0.95ohm; 50W; -55+150 deg.C; THT; TO220

***ure Electronics: Single N-Channel 650 V 950 mOhm 19 nC CoolMOS Power Mosfet - TO-220-3

***p One Stop: Trans MOSFET N-CH 650V 4.5A 3-Pin(3+Tab) TO-220 Tube

***el Electronic: MOSFET Transistor, N Channel, 4.5 A, 650 V, 0.85 ohm, 10 V, 3 V

***ment14 APAC: MOSFET, N, COOLMOS, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Source Voltage Vds:650V; On Resistance

***ark: MOSFET, N, COOLMOS, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:4.5A; Resistance, Rds On:0.95ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220; ;RoHS Compliant: Yes

***ineon: Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter

***nell: MOSFET, N, COOLMOS, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.5A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.85ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 50W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 4.5A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 50W; Pulse Current Idm: 13.5A; SMD Marking: 04N60C3; Termination Type: Through Hole; Voltage Vds Typ: 650V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 3.9V

***emi: N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 3.9 A, 1.2 Ω, TO-220

***itex: Transistor: N-MOSFET; unipolar; 600V; 3.9A; 1.2ohm; 50W; -55+150 deg.C; THT; TO220

***ure Electronics: N-Channel 600 V 1.2 Ohm Flange Mount SuperFET Mosfet - TO-220

***Yang: Trans MOSFET N-CH 600V 3.9A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube

***r Electronics: Power Field-Effect Transistor, 3.9A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:50mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:3.9A; Package / Case:TO-220; Power Dissipation Pd:50mW; Pulse Current Idm:11.7A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***icroelectronics: N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh M2 Power MOSFET in TO-220 package

***ure Electronics: STP6N60M2 Series 650 V 1.2 Ohm 4.5 A N-Channel MDmesh M2 Power Mosfet-TO-220

***ical: Trans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) TO-220AB Tube

***(Formerly Allied Electronics): MOSFET N-Ch 600V 4.5A MDmesh II TO-220

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 4.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: MOSFET, N-CH, 600V, 4.5A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:4.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Market price

Бөлім №	Mfg.	Сипаттама	Қор	Бағасы
AOT7N60 DISTI # V36:1790_07841398	Alpha & Omega Semiconductor	Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220 RoHS: Compliant	0	1000000:$0.3563 500000:$0.3566 100000:$0.3838 10000:$0.4328 1000:$0.4410
AOT7N60 DISTI # 785-1189-5-ND	Alpha & Omega Semiconductor	MOSFET N-CH 600V 7A TO-220 RoHS: Compliant Min Qty: 1000 Container: Tube	Temporarily Out of Stock	1000:$0.4410

Қосымша тауарлар

Сурет	Бөлім №	Сипаттама
	Mfr.#: AOT-1206-3D-RGB03-S-AO OMO.#: OMO-AOT-1206-3D-RGB03-S-AO-1190	Жаңа және түпнұсқа
	Mfr.#: AOT-1615-3D-RGB01 OMO.#: OMO-AOT-1615-3D-RGB01-1190	Жаңа және түпнұсқа
	Mfr.#: AOT1100L OMO.#: OMO-AOT1100L-ALPHA-AND-OMEGA-SEMICONDUCTOR	MOSFET N-CH 100V 8A TO220
	Mfr.#: AOT3N90 OMO.#: OMO-AOT3N90-1190	Жаңа және түпнұсқа
	Mfr.#: AOT430L OMO.#: OMO-AOT430L-1190	Жаңа және түпнұсқа
	Mfr.#: AOTF12N50 OMO.#: OMO-AOTF12N50-ALPHA-AND-OMEGA-SEMICONDUCTOR	MOSFET N-CH 500V 12A TO220F
	Mfr.#: AOTF22N50 OMO.#: OMO-AOTF22N50-ALPHA-AND-OMEGA-SEMICONDUCTOR	MOSFET N-CH 500V 22A TO220F
	Mfr.#: AOTF4N60 OMO.#: OMO-AOTF4N60-ALPHA-AND-OMEGA-SEMICONDUCTOR	MOSFET N-CH 600V 4A TO220F
	Mfr.#: AOTOM4558+ OMO.#: OMO-AOTOM4558--1190	Жаңа және түпнұсқа
	Mfr.#: AOT2610L T2610 OMO.#: OMO-AOT2610L-T2610-1190	Жаңа және түпнұсқа

Қол жетімділік

Қор:: Available
Тапсырыс бойынша:: 4000
Саны енгізіңіз:

AOT7N60 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.

Анықтамалық баға (USD)

Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы

1: ~~0,00 $~~; ~~0,00 $~~

10: ~~0,00 $~~; ~~0,00 $~~

100: ~~0,00 $~~; ~~0,00 $~~

500: ~~0,00 $~~; ~~0,00 $~~

1000: ~~0,00 $~~; ~~0,00 $~~

-ден бастаңыз

AOT7N6 4
AOT7N 5
AOT7 14
AOT 789

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AOT7N60

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes