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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| SI4894BDY-T1-E3 DISTI # V72:2272_09216628 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 8.9A 8-Pin SOIC N T/R RoHS: Compliant | 465 |
|
| SI4894BDY-T1-E3 DISTI # V36:1790_09216628 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 8.9A 8-Pin SOIC N T/R RoHS: Compliant | 0 |
|
| SI4894BDY-T1-E3 DISTI # 25790174 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 8.9A 8-Pin SOIC N T/R RoHS: Compliant | 465 |
|
| SI4894BDY-T1-E3 DISTI # SI4894BDY-T1-E3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 8.9A 8-Pin SOIC N T/R (Alt: SI4894BDY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Europe - 0 |
|
| SI4894BDY-T1-E3 DISTI # SI4894BDY-T1-E3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 8.9A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4894BDY-T1-E3) RoHS: Not Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| SI4894BDY-T1-E3 DISTI # SI4894BDY-T1-E3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 8.9A 8-Pin SOIC N T/R (Alt: SI4894BDY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Asia - 0 | |
| SI4894BDY-T1-E3 DISTI # 57J5682 | Vishay Intertechnologies | MOSFET Transistor, N Channel, 12 A, 30 V, 0.009 ohm, 10 V, 3 V RoHS Compliant: Yes | 0 |
|
| SI4894BDY-T1-E3 DISTI # 65K1934 | Vishay Intertechnologies | N CHANNEL MOSFET, 30V, 12A,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V,Power Dissipation Pd:3WRoHS Compliant: Yes | 0 |
|
| SI4894BDY-T1-E3 | Vishay Siliconix | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 8.9A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 2180 |
|
| SI4894BDY-T1-E3-PBF | Vishay Intertechnologies | 1674 |
| |
| SI4894BDY-T1-E3 | Vishay Intertechnologies | 2923 |
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
|
Mfr.#: SI4894BDY-T1-E3 OMO.#: OMO-SI4894BDY-T1-E3 |
MOSFET 30V 12V 1.4W |
|
|
Mfr.#: SI4894BDY-T1-E3 OMO.#: OMO-SI4894BDY-T1-E3-VISHAY |
Darlington Transistors MOSFET 30V 12V 1.4W |
|
Mfr.#: SI4894BDY-T1-E3-CUT TAPE |
Жаңа және түпнұсқа |
|
Mfr.#: SI4894BDY OMO.#: OMO-SI4894BDY-1190 |
Жаңа және түпнұсқа |
|
Mfr.#: SI4894BDY-T1 OMO.#: OMO-SI4894BDY-T1-1190 |
Жаңа және түпнұсқа |
|
Mfr.#: SI4894BDY-T1-E3 GE3 OMO.#: OMO-SI4894BDY-T1-E3-GE3-1190 |
Жаңа және түпнұсқа |
|
Mfr.#: SI4894BDY-T1-E3-PBF OMO.#: OMO-SI4894BDY-T1-E3-PBF-1190 |
Жаңа және түпнұсқа |
|
Mfr.#: SI4894BDY-T1-E3. OMO.#: OMO-SI4894BDY-T1-E3--1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: SI4894BDY-T1-GE3 OMO.#: OMO-SI4894BDY-T1-GE3-VISHAY |
MOSFET N-CH 30V 8.9A 8-SOIC |
|
Mfr.#: SI4894BDY-T1-GE3. OMO.#: OMO-SI4894BDY-T1-GE3--1190 |
Жаңа және түпнұсқа |