STGW15M120DF3

STGW15M120DF3
Mfr. #:
STGW15M120DF3
Өндіруші:
STMicroelectronics
Сипаттама:
IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
STGW15M120DF3 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
STGW15M120DF3 Көбірек ақпарат STGW15M120DF3 Product Details
Өнім атрибуты
Төлсипат мәні
Өндіруші:
STMicroelectronics
Өнім санаты:
IGBT транзисторлары
RoHS:
Y
Технология:
Си
Пакет/қорап:
TO-247-3
Орнату стилі:
Тесік арқылы
Конфигурация:
Бойдақ
Коллектор-эмиттер кернеуі VCEO Max:
1200 V
Коллектор-эмиттер қанығу кернеуі:
1.85 V
Шықпа эмитентінің максималды кернеуі:
20 V
Үздіксіз коллектор тогы 25 С:
30 A
Pd - қуаттың шығыны:
283 W
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 175 C
Серия:
STGW15M120DF3
Қаптама:
Түтік
Бренд:
STMicroelectronics
Шлюз-эмиттер ағып кету тогы:
250 nA
Өнім түрі:
IGBT транзисторлары
Зауыттық буманың саны:
600
Ішкі санат:
IGBT
Бірлік салмағы:
1.340411 oz
Tags
STGW15, STGW1, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
***ical
Trans IGBT Chip N-CH 1200V 30A 259000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 1.2KV, 30A, TO-247-3; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 259W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of
***ark
Igbt Single Transistor, 30 A, 1.85 V, 259 W, 1.2 Kv, To-247, 3
***icroelectronics
Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
***ical
Trans IGBT Chip N-CH 1200V 30A 259000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 1.2KV, 30A, TO-247-3; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 259W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of
***p One Stop
Trans IGBT Chip N-CH 1200V 30A 259000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT, S series 1200 V, 15 A low drop
***nell
IGBT, SINGLE, 1.2KV, 30A, TO-247-3; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 259W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of
***icroelectronics
Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
***ical
Trans IGBT Chip N-CH 1200V 30A 259000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel
***i-Key
IGBT H-SERIES 1200V 15A TO-247
***ical
Trans IGBT Chip N-CH 1200V 30A 333000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, 1.2KV, 30A, 175DEG C, 333W; Available until stocks are exhausted
***rchild Semiconductor
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.
***ical
Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247AC
***ernational Rectifier
1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
***or
IGBT W/ULTRAFAST SOFT RECOVERY D
***(Formerly Allied Electronics)
MOSFET; 1200V; 30.000A; COPAK-247
***ment14 APAC
IGBT,N CH,1200V,30A,TO-247AC; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:180W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:180W
***ical
Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247AC Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
***ark
TUBE / G8, 1200V, 15A, COPAK-247AC
*** Electronic Components
IGBT Transistors 1200V IGBT GEN8
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CAP CER 39PF 100V C0G/NP0 RADIAL
STMicroelectronics M Series Trench Gate Field-Stop IGBTs
STMicroelectronics M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. They represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.Learn More
Бөлім № Mfg. Сипаттама Қор Бағасы
STGW15M120DF3
DISTI # 497-15057-5-ND
STMicroelectronicsIGBT 1200V 30A 259W
RoHS: Compliant
Min Qty: 600
Container: Tube
Temporarily Out of Stock
  • 600:$5.0890
STGW15M120DF3
DISTI # STGW15M120DF3
STMicroelectronicsTrans IGBT Chip N-CH 1200V 30A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW15M120DF3)
RoHS: Compliant
Min Qty: 600
Container: Tube
Americas - 0
  • 600:$4.0900
  • 1200:$3.9900
  • 2400:$3.7900
  • 3600:$3.5900
  • 6000:$3.4900
STGW15M120DF3
DISTI # STGW15M120DF3
STMicroelectronicsTrans IGBT Chip N-CH 1200V 30A 3-Pin TO-247 Tube (Alt: STGW15M120DF3)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 30:€3.0700
STGW15M120DF3
DISTI # 26Y5812
STMicroelectronicsPTD HIGH VOLTAGE0
  • 1:$3.5000
STGW15M120DF3
DISTI # 511-STGW15M120DF3
STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
RoHS: Compliant
0
  • 1:$6.6600
  • 10:$6.0200
  • 25:$5.7400
  • 100:$4.9800
  • 250:$4.7600
  • 500:$4.3400
  • 1000:$3.7800
STGW15M120DF3STMicroelectronicsInsulated Gate Bipolar Transistor
RoHS: Compliant
Europe - 600
    STGW15M120DF3
    DISTI # STGW15M120DF3
    STMicroelectronics1200V 30A 259W TO247
    RoHS: Not Compliant
    50
    • 5:€4.1200
    • 30:€3.7200
    • 120:€3.5200
    • 300:€3.3900
    STGW15M120DF3
    DISTI # IGBT1558
    STMicroelectronicsIGBT 1200V 15A 1,85VTO-247Stock DE - 5Stock HK - 0Stock US - 0
    • 30:$4.8200
    • 60:$4.5100
    • 90:$4.4400
    • 150:$4.3700
    • 210:$4.1100
    STGW15M120DF3
    DISTI # 2470024
    STMicroelectronicsIGBT, SINGLE, 1.2KV, 30A, TO-247-3
    RoHS: Compliant
    0
    • 2500:$5.4900
    • 1000:$5.7000
    • 500:$6.5400
    • 250:$7.1700
    • 100:$7.5000
    • 25:$8.6500
    • 10:$9.0700
    • 1:$10.0400
    STGW15M120DF3
    DISTI # 2470024
    STMicroelectronicsIGBT, SINGLE, 1.2KV, 30A, TO-247-3
    RoHS: Compliant
    0
    • 100:£3.8100
    • 50:£4.1000
    • 10:£4.3900
    • 5:£5.0800
    • 1:£5.5800
    Сурет Бөлім № Сипаттама
    STGW15M120DF3

    Mfr.#: STGW15M120DF3

    OMO.#: OMO-STGW15M120DF3

    IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
    STGW15H120DF2

    Mfr.#: STGW15H120DF2

    OMO.#: OMO-STGW15H120DF2

    IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
    STGW15H120F2

    Mfr.#: STGW15H120F2

    OMO.#: OMO-STGW15H120F2

    IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
    STGW15S120DF3

    Mfr.#: STGW15S120DF3

    OMO.#: OMO-STGW15S120DF3

    IGBT Transistors IGBT & Power Bipolar
    STGW15M120DF3

    Mfr.#: STGW15M120DF3

    OMO.#: OMO-STGW15M120DF3-STMICROELECTRONICS

    IGBT Transistors IGBT & Power Bipola
    STGW15H120F2

    Mfr.#: STGW15H120F2

    OMO.#: OMO-STGW15H120F2-STMICROELECTRONICS

    IGBT Transistors IGBT & Power Bipola
    STGW15H120DF2

    Mfr.#: STGW15H120DF2

    OMO.#: OMO-STGW15H120DF2-STMICROELECTRONICS

    IGBT H-SERIES 1200V 15A TO-247
    Қол жетімділік
    Қор:
    100
    Тапсырыс бойынша:
    2083
    Саны енгізіңіз:
    STGW15M120DF3 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
    Анықтамалық баға (USD)
    Саны
    Тауар өлшемінің бағасы
    Қосымша. Бағасы
    1
    6,66 $
    6,66 $
    10
    6,02 $
    60,20 $
    25
    5,74 $
    143,50 $
    100
    4,98 $
    498,00 $
    250
    4,76 $
    1 190,00 $
    500
    4,34 $
    2 170,00 $
    1000
    3,78 $
    3 780,00 $
    2500
    3,64 $
    9 100,00 $
    -ден бастаңыз
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