We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| BSC046N10NS3GATMA1 DISTI # BSC046N10NS3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
| BSC046N10NS3GATMA1 DISTI # BSC046N10NS3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 100V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Temporarily Out of Stock |
|
| BSC046N10NS3GATMA1 DISTI # BSC046N10NS3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 100V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Temporarily Out of Stock |
|
| BSC046N10NS3 G DISTI # BSC046N10NS3 G | Infineon Technologies AG | Trans MOSFET N-CH 100V 17A 8-Pin TDSON T/R (Alt: BSC046N10NS3 G) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Asia - 0 | |
| BSC046N10NS3GATMA1 DISTI # BSC046N10NS3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 17A 8-Pin TDSON EP - Tape and Reel (Alt: BSC046N10NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC046N10NS3GATMA1 DISTI # 50Y1804 | Infineon Technologies AG | MOSFET, N-CH, 100V, 100A, 150DEG C, 156W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V RoHS Compliant: Yes | 0 |
|
| BSC046N10NS3 G DISTI # 726-BSC046N10NS3G | Infineon Technologies AG | MOSFET N-Ch 100V 100A TDSON-8 RoHS: Compliant | 100 |
|
| BSC046N10NS3GATMA1 DISTI # 726-BSC046N10NS3GATM | Infineon Technologies AG | MOSFET N-Ch 100V 100A TDSON-8 RoHS: Compliant | 0 |
|
| BSC046N10NS3G | Infineon Technologies AG | POWER FIELD-EFFECT TRANSISTOR, 17A I(D), 100V, 0.0046OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 2 |
|
| BSC046N10NS3GATMA1 DISTI # 2480739 | Infineon Technologies AG | MOSFET, N-CH, 100V, 100A, TDSON-8 RoHS: Compliant | 0 |
|
| BSC046N10NS3 G | Infineon Technologies AG | RoHS(ship within 1day) | 3 |
|
| BSC046N10NS3GATMA1 DISTI # 2480739RL | Infineon Technologies AG | MOSFET, N-CH, 100V, 100A, TDSON-8 RoHS: Compliant | 0 |
|
| BSC046N10NS3GATMA1 DISTI # 2480739 | Infineon Technologies AG | MOSFET, N-CH, 100V, 100A, TDSON-8 RoHS: Compliant | 0 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: BSC046N02KS G OMO.#: OMO-BSC046N02KS-G |
MOSFET N-Ch 20V 80A TDSON-8 OptiMOS 2 |
|
|
Mfr.#: BSC046N10NS3 G OMO.#: OMO-BSC046N10NS3-G |
MOSFET N-Ch 100V 100A TDSON-8 |
|
|
Mfr.#: BSC046N10NS3GATMA1 OMO.#: OMO-BSC046N10NS3GATMA1 |
MOSFET N-Ch 100V 100A TDSON-8 |
|
Mfr.#: BSC046N02KS OMO.#: OMO-BSC046N02KS-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: BSC046N02KS G OMO.#: OMO-BSC046N02KS-G-1190 |
MOSFET N-Ch 20V 80A TDSON-8 OptiMOS 2 |
|
|
Mfr.#: BSC046N02KSG OMO.#: OMO-BSC046N02KSG-1190 |
19 A, 20 V, 0.0046 ohm, N-CHANNEL, Si, POWER, MOSFET |
|
|
Mfr.#: BSC046N10NS OMO.#: OMO-BSC046N10NS-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: BSC046N10NS3 G OMO.#: OMO-BSC046N10NS3-G-1190 |
Trans MOSFET N-CH 100V 17A 8-Pin TDSON T/R (Alt: BSC046N10NS3 G) |
|
|
Mfr.#: BSC046N10NS3G OMO.#: OMO-BSC046N10NS3G-1190 |
POWER FIELD-EFFECT TRANSISTOR, 17A I(D), 100V, 0.0046OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
|
Mfr.#: BSC046N10NS3GATMA1 |
MOSFET N-Ch 100V 100A TDSON-8 |
