RJH1CV5DPK-00#T0

Mfr. #:: RJH1CV5DPK-00#T0
Өндіруші:: Renesas Electronics
Сипаттама:: IGBT Transistors IGBT
Өміршеңдік кезең:: Осы өндірушіден жаңа.
Деректер тізімі:: RJH1CV5DPK-00#T0 Деректер тізімі
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Өнім атрибуты
Төлсипат мәні

Өндіруші:: Renesas Electronics

Өнім санаты:: IGBT транзисторлары

RoHS:: Y

Технология:: Си

Қаптама:: Түтік

Бренд:: Renesas Electronics

Ылғалға сезімтал:: Иә

Өнім түрі:: IGBT транзисторлары

Зауыттық буманың саны:: 1

Ішкі санат:: IGBT

Tags: RJH1CV5, RJH1CV, RJH1C, RJH1, RJH

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RJH1CV5DPK-00#T0 Сипаттама

***ical: Trans IGBT Chip N-CH 1200V 50A 245000mW 3-Pin(3+Tab) TO-3P Tube

***i-Key: IGBT 1200V 50A 245W TO-3P

***egrated Device Technology: IGBT for Inverter Applications

*** Electronic Components: IGBT Transistors IGBT

*** Source Electronics: Trans IGBT Chip N-CH 1200V 50A 190000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 1200V 50A 190W TO247-3

***ure Electronics: IKW25T120FKSA1 Series 1200 V 50 A 190 W IGBT in TrenchStop - PG-TO247-3-1

***ource: IGBT with Anti-Parallel Diode; Package: PG-TO247-3; Switching Frequency: TRENCHSTOP 2-20kHz; Package: TO-247; VCE max: 1,200.0 V; ICmax @ 25°: 50.0 A; ICmax @ 100°: 25.0 A

***ment14 APAC: IGBT, N, 1200V, 25A, TO-247; Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:190W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:25A; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:190W; Power Dissipation Pd:190W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications

***ark: Igbt Single Transistor, 50 A, 2 V, 385 W, 1.2 Kv, To-247, 3 Rohs Compliant: Yes

***ical: Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT, SINGLE, 1.2KV, 50A, TO-247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 385W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

***ical: Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube

***r Electronics: Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel

***ure Electronics: IGBT Transistors 1200V/25 FAST IGBT FSII T

***i-Key: IGBT FIELD STOP 1200V 50A TO247

***ical: Trans IGBT Chip N=-CH 1200V 50A 312000mW 3-Pin(3+Tab) TO-3PN Rail

***eco: Transistor IGBT Chip N Channel 1.2k Volt 50 Amp 3-Pin 3+ Tab TO-3PN Rail

***ure Electronics: FGA25N120ANTD Series 1200 V 50 A Flange Mont NPT Trench IGBT - TO-3PN

***el Electronic: In a Pack of 2, ON Semiconductor FGA25N120ANTDTU IGBT, 50 A 1200 V, 3-Pin TO-3P

***ment14 APAC: IGBT, NPT, TO-3PN; DC Collector Current:50A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:312mW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-3PN; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:50A; Package / Case:TO-3PN; Power Dissipation Max:312W; Power Dissipation Pd:312mW; Pulsed Current Icm:90A; Rise Time:60ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

***th Star Micro: Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.

***ical: Trans IGBT Chip N-CH 1200V 60A 220000mW 3-Pin(3+Tab) TO-247 Tube

***Parts: IGBTs - Single, Transistors N-Channel, TO-247-3 60A 1200V 220W Through Hole

***ure Electronics: N-Channel 1200 V 30 A Very Fast PowerMESH IGBT - TO-247

***nell: IGBT, N 1200V 30A TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.75V; Power Dissipation Pd: 220W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins

***ical: Trans IGBT Chip N-CH 1200V 50A 326000mW Automotive 3-Pin(3+Tab) TO-247 Tube

***Parts: IGBTs - Single, Transistors N-Channel, PG-TO247-3 50A 1200V 326W Through Hole

***ure Electronics: IKW25N120H3 Series 1200 V 25 A Through Hole TRENCHSTOP IGBT -PG-TO247-3

***ineon SCT: 1200 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS

***ark: Continuous Collector Current:25A; Collector Emitter Saturation Voltage:2.4V; Power Dissipation:326W; Collector Emitter Voltage Max:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:175°C; Transistor Mounting:Through Hole; Msl:- Rohs Compliant: Yes |Infineon IKW25N120H3FKSA1.

***nell: IGBT+ DIODE,1200V,25A,TO247; Transistor Type:IGBT; DC Collector Current:25A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:326W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:326W

***ineon: Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. Furthermore, up to 15% efficiency improvement can be achieved by implementing this technology in your design. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding inverters; Solar inverters; UPS; All hard switching applications

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Сипаттама

Mfr.#: RJH1CV5DPK-00#T0

OMO.#: OMO-RJH1CV5DPK-00-T0

IGBT Transistors IGBT

Mfr.#: RJH1CV5DPQ-E0#T2

OMO.#: OMO-RJH1CV5DPQ-E0-T2

IGBT Transistors IGBT

Mfr.#: RJH1CV5DPQ-E0_13

OMO.#: OMO-RJH1CV5DPQ-E0-13-1190

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Қол жетімділік

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Тапсырыс бойынша:: 4000
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RJH1CV5DPK-00#T0

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes