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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| IPD50N06S214ATMA1 DISTI # IPD50N06S214ATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 55V 50A TO252-3 RoHS: Compliant Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPD50N06S214ATMA2 DISTI # IPD50N06S214ATMA2-ND | Infineon Technologies AG | MOSFET N-CH 55V 50A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| IPD50N06S2-14 DISTI # IPD50N06S2-14 | Infineon Technologies AG | Trans MOSFET N-CH 55V 50A 3-Pin TO-252 T/R - Bulk (Alt: IPD50N06S2-14) RoHS: Not Compliant Min Qty: 695 Container: Bulk | Americas - 0 |
|
| IPD50N06S214ATMA2 DISTI # IPD50N06S214ATMA2 | Infineon Technologies AG | Trans MOSFET N-CH 55V 50A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD50N06S214ATMA2) RoHS: Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| IPD50N06S214ATMA1 DISTI # IPD50N06S214ATMA1 | Infineon Technologies AG | - Bulk (Alt: IPD50N06S214ATMA1) Min Qty: 642 Container: Bulk | Americas - 0 |
|
| IPD50N06S214ATMA2 DISTI # SP001063624 | Infineon Technologies AG | Trans MOSFET N-CH 55V 50A 3-Pin TO-252 T/R (Alt: SP001063624) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Europe - 0 |
|
| IPD50N06S214ATMA2 DISTI # 726-IPD50N06S214ATMA | Infineon Technologies AG | MOSFET N-CHANNEL_55/60V | 2500 |
|
| IPD50N06S2-14 DISTI # 726-IPD50N06S2-14 | Infineon Technologies AG | MOSFET N-Ch 55V 50A DPAK-2 OptiMOS RoHS: Compliant | 0 | |
| IPD50N06S2-14 | Infineon Technologies AG | Power Field-Effect Transistor, 50A I(D), 55V, 0.0144ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant | 127 |
|
| IPD50N06S214ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 50A I(D), 55V, 0.0144ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Not Compliant | 2296 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: IPD50N06S2L13ATMA1 OMO.#: OMO-IPD50N06S2L13ATMA1 |
MOSFET N-Ch 55V 50A DPAK-2 OptiMOS |
|
Mfr.#: IPD50N06S409ATMA2 |
MOSFET N-CH 60V 50A TO252-3 |
|
Mfr.#: IPD50N06S3-07 OMO.#: OMO-IPD50N06S3-07-1190 |
MOSFET N-Ch 55V 50A DPAK-2 |
|
|
Mfr.#: IPD50N06S3L-06 OMO.#: OMO-IPD50N06S3L-06-1190 |
MOSFET N-Ch 55V 50A DPAK-2 |
|
|
Mfr.#: IPD50N06S3L06 OMO.#: OMO-IPD50N06S3L06-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: IPD50N06S4-09 OMO.#: OMO-IPD50N06S4-09-1190 |
Trans MOSFET N-CH 60V 50A 3-Pin TO-252 T/R (Alt: IPD50N06S4-09) |
|
|
Mfr.#: IPD50N06S409ATMA1 |
MOSFET N-CH 60V 50A TO252-3 |
|
|
Mfr.#: IPD50N06S4L-12 . OMO.#: OMO-IPD50N06S4L-12--1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: IPD50N06S4L-12 4N06L12 |
Жаңа және түпнұсқа |
|
|
Mfr.#: IPD50N06S4L-12 OMO.#: OMO-IPD50N06S4L-12-126 |
IGBT Transistors MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2 |
