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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| SEMIX151GB12T4S | SEMIKRON | Insulated Gate Bipolar Transistor, 230A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant | 2 |
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: SEMIX151GB12E4V4 OMO.#: OMO-SEMIX151GB12E4V4-1190 |
Жаңа және түпнұсқа |
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Mfr.#: SEMIX151GB12T4S OMO.#: OMO-SEMIX151GB12T4S-1190 |
Insulated Gate Bipolar Transistor, 230A I(C), 1200V V(BR)CES, N-Channel |
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Mfr.#: SEMIX151GD126HDS OMO.#: OMO-SEMIX151GD126HDS-1190 |
SEMIX, Trench IGBT Module, 1200V, 100A |
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Mfr.#: SEMIX151GD128DS OMO.#: OMO-SEMIX151GD128DS-1190 |
Жаңа және түпнұсқа |
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Mfr.#: SEMIX151GD12E4S OMO.#: OMO-SEMIX151GD12E4S-1190 |
IGBT MODULE, SIX, 1.2KV, 232A, Transistor Polarity:Six NPN, DC Collector Current:232A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ce |