We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| IPP114N12N3GXKSA1 DISTI # IPP114N12N3GXKSA1-ND | Infineon Technologies AG | MOSFET N-CH 120V 75A TO220-3 RoHS: Compliant Min Qty: 1 Container: Tube | 328In Stock |
|
| IPP114N12N3GXKSA1 DISTI # IPP114N12N3GXKSA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP114N12N3GXKSA1) RoHS: Compliant Min Qty: 500 Container: Tube | Americas - 0 |
|
| IPP114N12N3GXKSA1 DISTI # SP000652740 | Infineon Technologies AG | Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-220 (Alt: SP000652740) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| IPP114N12N3GXKSA1 DISTI # 12AC9727 | Infineon Technologies AG | MOSFET, N-CH, 120V, 75A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:75A,Drain Source Voltage Vds:120V,On Resistance Rds(on):0.0098ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes | 371 |
|
| IPP114N12N3 G DISTI # 726-IPP114N12N3G | Infineon Technologies AG | MOSFET N-Ch 120V 75A TO220-3 OptiMOS 3 RoHS: Compliant | 121 |
|
| IPP114N12N3G | Infineon Technologies AG | Power Field-Effect Transistor, 75A I(D), 100V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 363 |
|
| IPP114N12N3GXKSA1 DISTI # 8922179P | Infineon Technologies AG | MOSFET N-CHANNEL 100V 75A OPTIMOS TO220, TU | 405 |
|
| IPP114N12N3GXKSA1 DISTI # IPP114N12N3GXKSA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,120V,300A,136W,PG-TO220-3 | 112 |
|
| IPP114N12N3GXKSA1 DISTI # 2709956 | Infineon Technologies AG | MOSFET, N-CH, 120V, 75A, TO-220 RoHS: Compliant | 371 |
|
| IPP114N12N3GXKSA1 DISTI # 2709956 | Infineon Technologies AG | MOSFET, N-CH, 120V, 75A, TO-220 RoHS: Compliant | 371 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: IPP114N03L G OMO.#: OMO-IPP114N03L-G |
MOSFET N-Ch 30V 30A TO220-3 OptiMOS 3 |
|
Mfr.#: IPP114N12N3GXKSA1 |
MOSFET N-CH 120V 75A TO220-3 |
|
|
Mfr.#: IPP114N03L G |
MOSFET N-CH 30V 30A TO-220-3 |
|
Mfr.#: IPP114N03LG OMO.#: OMO-IPP114N03LG-1190 |
Power Field-Effect Transistor, 30A I(D), 30V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
|
Mfr.#: IPP114N12N OMO.#: OMO-IPP114N12N-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: IPP114N12N3 OMO.#: OMO-IPP114N12N3-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: IPP114N12N3 G(SP00065274 |
Жаңа және түпнұсқа |
|
|
Mfr.#: IPP114N12N3G OMO.#: OMO-IPP114N12N3G-1190 |
Power Field-Effect Transistor, 75A I(D), 100V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
|
Mfr.#: IPP114N12N3G,114N12N |
Жаңа және түпнұсқа |
|
|
Mfr.#: IPP114N12N3 G OMO.#: OMO-IPP114N12N3-G-124 |
Darlington Transistors MOSFET N-Ch 120V 75A TO220-3 OptiMOS 3 |
