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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| SPB03N60S5E3045A | Infineon Technologies AG | Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 1000 |
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: SPB03N60C3 OMO.#: OMO-SPB03N60C3-126 |
IGBT Transistors MOSFET N-Ch 600V 3.2A D2PAK-2 CoolMOS C3 |
|
|
Mfr.#: SPB03N605S OMO.#: OMO-SPB03N605S-1190 |
Жаңа және түпнұсқа |
|
Mfr.#: SPB03N60C3ATMA1 |
MOSFET N-CH 650V 3.2A D2PAK |
|
|
Mfr.#: SPB03N60C3E3045 OMO.#: OMO-SPB03N60C3E3045-1190 |
- Bulk (Alt: SPB03N60C3E3045) |
|
|
Mfr.#: SPB03N60S5 OMO.#: OMO-SPB03N60S5-1190 |
MOSFET N-Ch 600V 3.2A D2PAK-2 CoolMOS S5 |
|
|
Mfr.#: SPB03N60S5E3045A OMO.#: OMO-SPB03N60S5E3045A-1190 |
Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |