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IPB65R660CFDAATMA1

IPB65R660CFDAATMA1
Mfr. #:
IPB65R660CFDAATMA1
Өндіруші:
Infineon / IR
Сипаттама:
MOSFET N-Ch 650V 6A D2PAK-2
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IPB65R660CFDAATMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
TO-263-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
650 V
Идентификатор - үздіксіз төгу тогы:
6 A
Rds On - ағызу көзіне қарсылық:
594 mOhms
Vgs th - Gate-Source шекті кернеуі:
3.5 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
20 nC
Ең төменгі жұмыс температурасы:
- 40 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
62.5 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Қаптама:
Ролик
Серия:
CoolMOS CFDA
Транзистор түрі:
1 N-Channel
Бренд:
Infineon / IR
Күз уақыты:
10 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
8 ns
Зауыттық буманың саны:
1000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
40 ns
Қосудың әдеттегі кешігу уақыты:
9 ns
Бөлім # Бүркеншік аттар:
IPB65R660CFDA IPB65R66CFDAXT SP000875794
Бірлік салмағы:
0.068654 oz
Tags
IPB65R660CFDA, IPB65R66, IPB65R6, IPB65, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    L***v
    L***v
    RU

    Irreplaceable thing) hood) 5 stars) i recommend)

    2019-03-28
    H***a
    H***a
    BY

    Everything corresponds to the description, delivery is two months.

    2019-04-27
    V***v
    V***v
    RU

    It's okay.

    2019-07-10
    S***v
    S***v
    RU

    Great. Everything corresponds to the description. Quality is good. I recommend.

    2019-06-07
***ical
Trans MOSFET N-CH 650V 6A Automotive 3-Pin(2+Tab) D2PAK T/R
*** Stop Electro
Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon SCT
650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs, PG-TO263-3, RoHS
***ineon
650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting
Бөлім № Mfg. Сипаттама Қор Бағасы
IPB65R660CFDAATMA1
DISTI # V72:2272_06383166		Infineon Technologies AGTrans MOSFET N-CH 650V 6A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
    IPB65R660CFDAATMA1
    DISTI # V36:1790_06383166    		Infineon Technologies AGTrans MOSFET N-CH 650V 6A Automotive 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		0
      IPB65R660CFDAATMA1
      DISTI # IPB65R660CFDAATMA1-ND      		Infineon Technologies AGMOSFET N-CH TO263-3
      RoHS: Compliant
      Min Qty: 1000
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 1000:$1.1326
      IPB65R660CFDAATMA1
      DISTI # IPB65R660CFDAATMA1      		Infineon Technologies AGTrans MOSFET N-CH 650V 6A 3-Pin TO-263 T/R - Bulk (Alt: IPB65R660CFDAATMA1)
      Min Qty: 385
      Container: Bulk      		Americas - 0
      • 3850:$0.8249
      • 1925:$0.8399
      • 1155:$0.8699
      • 770:$0.9019
      • 385:$0.9359
      IPB65R660CFDAATMA1
      DISTI # SP000875794      		Infineon Technologies AGTrans MOSFET N-CH 650V 6A 3-Pin TO-263 T/R (Alt: SP000875794)
      RoHS: Compliant
      Min Qty: 1000
      Container: Tape and Reel      		Europe - 0
      • 10000:€0.7879
      • 6000:€0.8439
      • 4000:€0.9089
      • 2000:€0.9849
      • 1000:€1.1819
      IPB65R660CFDAXT
      DISTI # IPB65R660CFDAATMA1      		Infineon Technologies AGTrans MOSFET N-CH 650V 6A 3-Pin(2+Tab) TO-263 T/R - Tape and Reel (Alt: IPB65R660CFDAATMA1)
      RoHS: Compliant
      Min Qty: 1000
      Container: Reel      		Americas - 0
      • 10000:$0.9019
      • 6000:$0.9179
      • 4000:$0.9499
      • 2000:$0.9859
      • 1000:$1.0229
      IPB65R660CFDA
      DISTI # 726-IPB65R660CFDA      		Infineon Technologies AGMOSFET N-Ch 650V 6A D2PAK-2
      RoHS: Compliant      		523
      • 1:$2.0900
      • 10:$1.7700
      • 100:$1.4200
      • 500:$1.2400
      • 1000:$1.0300
      • 2000:$0.9590
      • 5000:$0.9240
      IPB65R660CFDAATMA1
      DISTI # 726-IPB65R660CFDAATM      		Infineon Technologies AGMOSFET N-Ch 650V 6A D2PAK-2
      RoHS: Compliant      		180
      • 1:$2.0900
      • 10:$1.7700
      • 100:$1.4200
      • 500:$1.2400
      • 1000:$1.0300
      • 2000:$0.9590
      • 5000:$0.9240
      IPB65R660CFDAATMA1Infineon Technologies AGPower Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
      RoHS: Compliant      		30000
      • 1000:$0.8600
      • 500:$0.9000
      • 100:$0.9400
      • 25:$0.9800
      • 1:$1.0500
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      C1206C150JDGACAUTO

      Mfr.#: C1206C150JDGACAUTO

      OMO.#: OMO-C1206C150JDGACAUTO

      		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 1000V 15pF C0G 1206 5% AEC-Q200
      CGA3E3X7S2A104K080AE

      Mfr.#: CGA3E3X7S2A104K080AE

      OMO.#: OMO-CGA3E3X7S2A104K080AE

      		 Multilayer Ceramic Capacitors MLCC - SMD/SMT SOFT 0603 100V 0.1uF X7S 10% AEC-Q200
      WSL2010R0330FEA18

      Mfr.#: WSL2010R0330FEA18

      OMO.#: OMO-WSL2010R0330FEA18-VISHAY-DALE

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      BLM31KN271SH1L

      Mfr.#: BLM31KN271SH1L

      OMO.#: OMO-BLM31KN271SH1L-MURATA-ELECTRONICS

      		 FERRITE BEAD 270 OHM 1206 1LN
      US1MDFQ-13

      Mfr.#: US1MDFQ-13

      OMO.#: OMO-US1MDFQ-13-DIODES

      		 DIODE GEN PURP 1KV 1A DFLAT
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      Mfr.#: PD3S160-7

      OMO.#: OMO-PD3S160-7-DIODES

      		 DIODE SCHOTTKY 60V 1A POWERDI323
      Қол жетімділік
      Қор:
      180
      Тапсырыс бойынша:
      2163
      Саны енгізіңіз:
      IPB65R660CFDAATMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
      Анықтамалық баға (USD)
      Саны
      Тауар өлшемінің бағасы
      Қосымша. Бағасы
      1
      2,09 $
      2,09 $
      10
      1,77 $
      17,70 $
      100
      1,42 $
      142,00 $
      500
      1,24 $
      620,00 $
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