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BSC600N25NS3 G

BSC600N25NS3 G
Mfr. #:
BSC600N25NS3 G
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET N-Ch 250V 25A TDSON-8 OptiMOS 3
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
BSC600N25NS3 G Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
BSC600N25NS3 G Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
TDSON-8
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
250 V
Идентификатор - үздіксіз төгу тогы:
25 A
Rds On - ағызу көзіне қарсылық:
50 mOhms
Vgs th - Gate-Source шекті кернеуі:
2 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
29 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
125 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
OptiMOS
Қаптама:
Ролик
Биіктігі:
1.27 mm
Ұзындығы:
5.9 mm
Серия:
OptiMOS 3
Транзистор түрі:
1 N-Channel
Түрі:
OptiMOS 3 Power-Transistor
Ені:
5.15 mm
Бренд:
Infineon Technologies
Форвард өткізгіштік - Мин:
25 S
Күз уақыты:
8 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
10 ns
Зауыттық буманың саны:
5000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
22 ns
Қосудың әдеттегі кешігу уақыты:
10 ns
Бөлім # Бүркеншік аттар:
BSC600N25NS3GATMA1 BSC6N25NS3GXT SP000676402
Бірлік салмағы:
0.003527 oz
Tags
BSC600N25NS3G, BSC600N25NS3, BSC600N, BSC60, BSC6, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Бөлім № Mfg. Сипаттама Қор Бағасы
BSC600N25NS3GATMA1
DISTI # BSC600N25NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 250V 25A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$1.4342
BSC600N25NS3GATMA1
DISTI # BSC600N25NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 250V 25A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.6157
  • 500:$1.9158
  • 100:$2.3659
  • 10:$2.8850
  • 1:$3.2300
BSC600N25NS3GATMA1
DISTI # BSC600N25NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 250V 25A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.6157
  • 500:$1.9158
  • 100:$2.3659
  • 10:$2.8850
  • 1:$3.2300
BSC600N25NS3 G
DISTI # BSC600N25NS3 G		Infineon Technologies AGTrans MOSFET N-CH 250V 25A 8-Pin TDSON T/R (Alt: BSC600N25NS3 G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
    BSC600N25NS3GATMA1
    DISTI # BSC600N25NS3GATMA1    		Infineon Technologies AGTrans MOSFET N-CH 250V 25A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC600N25NS3GATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 5000:$1.3900
    • 10000:$1.3900
    • 20000:$1.2900
    • 30000:$1.2900
    • 50000:$1.1900
    BSC600N25NS3GATMA1
    DISTI # 79X1338    		Infineon Technologies AGMOSFET, N-CH, 250V, 25A, PG-TDSON- 8,Transistor Polarity:N Channel,Continuous Drain Current Id:25A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.05ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
    • 1:$2.8300
    • 10:$2.4000
    • 25:$2.2900
    • 50:$2.1900
    • 100:$2.0800
    • 250:$1.9800
    • 500:$1.7800
    • 1000:$1.5000
    BSC600N25NS3 G
    DISTI # 726-BSC600N25NS3GXT    		Infineon Technologies AGMOSFET N-Ch 250V 25A TDSON-8 OptiMOS 3
    RoHS: Compliant    		99
    • 1:$2.8300
    • 10:$2.4000
    • 100:$2.0800
    • 250:$1.9800
    • 500:$1.7800
    • 1000:$1.5000
    • 2500:$1.4200
    • 5000:$1.3700
    BSC600N25NS3GATMA1
    DISTI # 726-BSC600N25NS3GATM    		Infineon Technologies AGMOSFET N-Ch 250V 25A TDSON-8 OptiMOS 3
    RoHS: Compliant    		0
    • 1:$2.7000
    • 10:$2.3000
    • 100:$1.9900
    • 250:$1.8900
    • 500:$1.7000
    • 1000:$1.4300
    • 2500:$1.3600
    BSC600N25NS3GATMA1
    DISTI # 9064303P    		Infineon Technologies AGMOSFET N-CH 250V 25A OPTIMOS TDSON8 EP, RL15
    • 25:£1.8320
    • 125:£1.4700
    • 250:£1.3760
    • 625:£1.2840
    BSC600N25NS3GInfineon Technologies AGPOWER FIELD-EFFECT TRANSISTOR, 25A I(D), 250V, 0.06OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET4
    • 4:$6.6000
    • 2:$7.5000
    • 1:$9.0000
    BSC600N25NS3GATMA1
    DISTI # 2432713RL    		Infineon Technologies AGMOSFET, N CH, 250V, 25A, TDSON-8
    RoHS: Compliant    		0
    • 1:$4.4800
    • 10:$3.8100
    • 100:$3.2900
    BSC600N25NS3GATMA1
    DISTI # 2432713    		Infineon Technologies AGMOSFET, N CH, 250V, 25A, TDSON-8
    RoHS: Compliant    		0
    • 1:$4.4800
    • 10:$3.8100
    • 100:$3.2900
    BSC600N25NS3GATMA1
    DISTI # 2432713    		Infineon Technologies AGMOSFET, N CH, 250V, 25A, TDSON-8
    RoHS: Compliant    		0
    • 1:£2.9600
    • 10:£2.2900
    • 100:£1.8700
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    Қол жетімділік
    Қор:
    Available
    Тапсырыс бойынша:
    1989
    Саны енгізіңіз:
    BSC600N25NS3 G ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
    Анықтамалық баға (USD)
    Саны
    Тауар өлшемінің бағасы
    Қосымша. Бағасы
    1
    2,69 $
    2,69 $
    10
    2,29 $
    22,90 $
    100
    1,98 $
    198,00 $
    250
    1,88 $
    470,00 $
    500
    1,69 $
    845,00 $
    1000
    1,42 $
    1 420,00 $
    2500
    1,35 $
    3 375,00 $
    2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
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