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IPW65R080CFDAFKSA1

IPW65R080CFDAFKSA1
Mfr. #:
IPW65R080CFDAFKSA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET N-Ch 650V 43.3A TO247-3
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IPW65R080CFDAFKSA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
IPW65R080CFDAFKSA1 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
Тесік арқылы
Пакет/қорап:
TO-247-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
650 V
Идентификатор - үздіксіз төгу тогы:
43.3 A
Rds On - ағызу көзіне қарсылық:
72 mOhms
Vgs th - Gate-Source шекті кернеуі:
3.5 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
161 nC
Ең төменгі жұмыс температурасы:
- 40 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
391 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
CoolMOS
Қаптама:
Түтік
Биіктігі:
21.1 mm
Ұзындығы:
16.13 mm
Серия:
CoolMOS CFDA
Транзистор түрі:
1 N-Channel
Ені:
5.21 mm
Бренд:
Infineon Technologies
Күз уақыты:
6 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
18 ns
Зауыттық буманың саны:
240
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
85 ns
Қосудың әдеттегі кешігу уақыты:
20 ns
Бөлім # Бүркеншік аттар:
IPW65R080CFDA IPW65R8CFDAXK SP000875806
Бірлік салмағы:
1.340411 oz
Tags
IPW65R080CFDA, IPW65R08, IPW65R0, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 650 V 80 mOhm 161 nC CoolMOS™ Power Mosfet - TO-247-3
***p One Stop Japan
Trans MOSFET N-CH 650V 43.3A Automotive 3-Pin(3+Tab) TO-247 Tube
***ineon SCT
650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs, PG-TO247-3, RoHS
***ark
Mosfet, N-Ch, Aec-Q101, 650V, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:43.3A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.072Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ineon
650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Бөлім № Mfg. Сипаттама Қор Бағасы
IPW65R080CFDAFKSA1
DISTI # V99:2348_06378457		Infineon Technologies AGTrans MOSFET N-CH 650V 43.3A Automotive 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		280
  • 240:$7.5580
  • 10:$8.8290
  • 1:$9.5990
IPW65R080CFDAFKSA1
DISTI # IPW65R080CFDAFKSA1-ND		Infineon Technologies AGMOSFET N-CH 700V 43.3A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		1563In Stock
  • 240:$9.2271
  • 10:$11.2220
  • 1:$12.4700
IPW65R080CFDAFKSA1
DISTI # 31240601		Infineon Technologies AGTrans MOSFET N-CH 650V 43.3A Automotive 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		280
  • 10:$8.8290
  • 1:$9.5990
IPW65R080CFDAXK
DISTI # IPW65R080CFDAFKSA1		Infineon Technologies AGTrans MOSFET N-CH 650V 43.3A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: IPW65R080CFDAFKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 240:$6.4900
  • 480:$6.1900
  • 960:$5.9900
  • 1440:$5.7900
  • 2400:$5.6900
IPW65R080CFDAFKSA1
DISTI # 13AC9099		Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:43.3A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.072ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes0
  • 1:$12.6400
  • 10:$11.5200
  • 25:$11.0400
  • 50:$10.3800
  • 100:$9.7300
IPW65R080CFDAFKSA1
DISTI # 726-IPW65R080CFDAFKS		Infineon Technologies AGMOSFET N-Ch 650V 43.3A TO247-3
RoHS: Compliant		1401
  • 1:$10.7900
  • 10:$9.7500
  • 25:$9.3000
  • 100:$8.0800
  • 250:$7.7100
  • 500:$7.0300
IPW65R080CFDA
DISTI # 726-IPW65R080CFDA		Infineon Technologies AGMOSFET N-Ch 650V 43.3A TO247-3
RoHS: Compliant		158
  • 1:$10.7900
  • 10:$9.7500
  • 25:$9.3000
  • 100:$8.0800
  • 250:$7.7100
  • 500:$7.0300
IPW65R080CFDAFKSA1
DISTI # 2726080		Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-247-3
RoHS: Compliant		140
  • 1:$19.8800
  • 10:$17.8900
  • 240:$14.7100
IPW65R080CFDAFKSA1
DISTI # 2726080		Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-247-3
RoHS: Compliant		161
  • 1:£6.2100
  • 5:£5.5200
  • 10:£5.2400
  • 50:£5.2200
  • 100:£5.1900
IPW65R080CFDAFKSA1
DISTI # C1S322000254716		Infineon Technologies AGTrans MOSFET N-CH 650V 43.3A Automotive 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		280
  • 240:$7.5580
  • 10:$8.8290
  • 1:$9.5990
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AMC1311BDWV

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IAUT260N10S5N019ATMA1

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0697H9150-02

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 PRECISION REINFORCED ISOLATED AM
Қол жетімділік
Қор:
825
Тапсырыс бойынша:
2808
Саны енгізіңіз:
IPW65R080CFDAFKSA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
10,78 $
10,78 $
10
9,74 $
97,40 $
25
9,29 $
232,25 $
100
8,07 $
807,00 $
250
7,70 $
1 925,00 $
500
7,02 $
3 510,00 $
2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
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