IPB70N10S3-12

IPB70N10S3-12
Mfr. #:
IPB70N10S3-12
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IPB70N10S3-12 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
IPB70N10S3-12 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
TO-263-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
100 V
Идентификатор - үздіксіз төгу тогы:
70 A
Rds On - ағызу көзіне қарсылық:
9.4 mOhms
Vgs th - Gate-Source шекті кернеуі:
2 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
66 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 175 C
Pd - қуаттың шығыны:
125 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Біліктілік:
AEC-Q101
Сауда атауы:
OptiMOS
Қаптама:
Ролик
Биіктігі:
4.4 mm
Ұзындығы:
10 mm
Серия:
OptiMOS-T
Транзистор түрі:
1 N-Channel
Ені:
9.25 mm
Бренд:
Infineon Technologies
Күз уақыты:
8 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
8 ns
Зауыттық буманың саны:
1000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
25 ns
Қосудың әдеттегі кешігу уақыты:
17 ns
Бөлім # Бүркеншік аттар:
IPB70N10S312ATMA1 IPB7N1S312XT SP000261246
Бірлік салмағы:
0.139332 oz
Tags
IPB70N10S3-1, IPB70N10S3, IPB70N10S, IPB70N10, IPB70N1, IPB70N, IPB70, IPB7, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
75V to 100V N-Channel Automotive MOSFETs
Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Бөлім № Mfg. Сипаттама Қор Бағасы
IPB70N10S312ATMA1
DISTI # V72:2272_06384093
Infineon Technologies AGTrans MOSFET N-CH 100V 70A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
771
  • 500:$0.9893
  • 250:$1.1150
  • 100:$1.1257
  • 25:$1.2883
  • 10:$1.3886
  • 1:$1.8115
IPB70N10S312ATMA1
DISTI # V36:1790_06384093
Infineon Technologies AGTrans MOSFET N-CH 100V 70A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
0
  • 1000000:$0.7455
  • 500000:$0.7459
  • 100000:$0.7823
  • 10000:$0.8507
  • 1000:$0.8623
IPB70N10S312ATMA1
DISTI # IPB70N10S312ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 100V 70A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
900In Stock
  • 500:$1.0720
  • 100:$1.3048
  • 10:$1.6230
  • 1:$1.8100
IPB70N10S312ATMA1
DISTI # IPB70N10S312ATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 100V 70A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
900In Stock
  • 500:$1.0720
  • 100:$1.3048
  • 10:$1.6230
  • 1:$1.8100
IPB70N10S312ATMA1
DISTI # IPB70N10S312ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 100V 70A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
On Order
  • 10000:$0.7533
  • 5000:$0.7731
  • 2000:$0.8029
  • 1000:$0.8623
IPB70N10S312ATMA1
DISTI # 26195351
Infineon Technologies AGTrans MOSFET N-CH 100V 70A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
771
  • 8:$1.8115
IPB70N10S312XT
DISTI # IPB70N10S312ATMA1
Infineon Technologies AGTrans MOSFET N-CH 100V 70A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB70N10S312ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$0.8129
  • 6000:$0.8269
  • 4000:$0.8559
  • 2000:$0.8879
  • 1000:$0.9219
IPB70N10S312ATMA1
DISTI # 50Y2015
Infineon Technologies AGMOSFET Transistor, N Channel, 70 A, 100 V, 0.0094 ohm, 10 V, 3 V RoHS Compliant: Yes800
  • 500:$1.0000
  • 250:$1.0700
  • 100:$1.1400
  • 50:$1.2400
  • 25:$1.3300
  • 10:$1.4200
  • 1:$1.6800
IPB70N10S312ATMA1
DISTI # 726-IPB70N10S312ATMA
Infineon Technologies AGMOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T
RoHS: Compliant
923
  • 1:$1.8800
  • 10:$1.6000
  • 100:$1.2800
  • 500:$1.1200
  • 1000:$0.9270
  • 2000:$0.8640
  • 5000:$0.8320
  • 10000:$0.8000
IPB70N10S3-12
DISTI # 726-IPB70N10S312
Infineon Technologies AGMOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T
RoHS: Compliant
755
  • 1:$1.6600
  • 10:$1.4100
  • 100:$1.1300
  • 500:$0.9920
  • 1000:$0.8220
  • 2000:$0.7650
  • 5000:$0.7370
  • 10000:$0.7080
IPB70N10S312ATMA1
DISTI # XSKDRABV0052158
Infineon Technologies AG 
RoHS: Compliant
3000 in Stock0 on Order
  • 3000:$1.1500
  • 1000:$1.2300
IPB70N10S312ATMA1
DISTI # 2480810
Infineon Technologies AGMOSFET, N-CH, 100V, 70A, TO263773
  • 500:£0.7190
  • 250:£0.7700
  • 100:£0.8190
  • 25:£1.0200
  • 5:£1.1700
IPB70N10S312ATMA1
DISTI # 2480810RL
Infineon Technologies AGMOSFET, N-CH, 100V, 70A, TO263
RoHS: Compliant
0
  • 500:$1.4900
  • 100:$1.7000
  • 10:$2.1200
  • 1:$2.5000
IPB70N10S312ATMA1
DISTI # 2480810
Infineon Technologies AGMOSFET, N-CH, 100V, 70A, TO263
RoHS: Compliant
700
  • 500:$1.4900
  • 100:$1.7000
  • 10:$2.1200
  • 1:$2.5000
Сурет Бөлім № Сипаттама
VNS1NV04DP-E

Mfr.#: VNS1NV04DP-E

OMO.#: OMO-VNS1NV04DP-E

Gate Drivers OMNIFET POWER MOSFET 40V 1.7 A
NTD5C648NLT4G

Mfr.#: NTD5C648NLT4G

OMO.#: OMO-NTD5C648NLT4G

MOSFET T6 60V LL DPAK
FQB55N10TM

Mfr.#: FQB55N10TM

OMO.#: OMO-FQB55N10TM

MOSFET 100V N-Channel QFET
CSD17579Q3AT

Mfr.#: CSD17579Q3AT

OMO.#: OMO-CSD17579Q3AT

MOSFET 30V NCh NexFET Pwr MOSFET
5002

Mfr.#: 5002

OMO.#: OMO-5002

Circuit Board Hardware - PCB TEST POINT WHITE .040
FQB55N10TM

Mfr.#: FQB55N10TM

OMO.#: OMO-FQB55N10TM-ON-SEMICONDUCTOR

MOSFET N-CH 100V 55A D2PAK
MPZ2012S601A

Mfr.#: MPZ2012S601A

OMO.#: OMO-MPZ2012S601A-1158

EMI Filter Beads, Chips & Arrays Ferrite Chip Beads
MMZ1608B601C

Mfr.#: MMZ1608B601C

OMO.#: OMO-MMZ1608B601C-1158

EMI Filter Beads, Chips & Arrays Ferrite Chip Beads
ABM8G-13.000MHZ-18-D2Y-T

Mfr.#: ABM8G-13.000MHZ-18-D2Y-T

OMO.#: OMO-ABM8G-13-000MHZ-18-D2Y-T-ABRACON

Crystals 13.000MHz 18pF 30ppm -40C +85C
CSD17579Q3AT

Mfr.#: CSD17579Q3AT

OMO.#: OMO-CSD17579Q3AT-TEXAS-INSTRUMENTS

IGBT Transistors MOSFET 30V NCh NexFET Pwr MOSFET
Қол жетімділік
Қор:
755
Тапсырыс бойынша:
2738
Саны енгізіңіз:
IPB70N10S3-12 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
1,66 $
1,66 $
10
1,41 $
14,10 $
100
1,13 $
113,00 $
500
0,99 $
496,00 $
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