SISH112DN-T1-GE3

SISH112DN-T1-GE3
Mfr. #:
SISH112DN-T1-GE3
Өндіруші:
Vishay
Сипаттама:
N-Channel 30 V (D-S) Fast Switching MOSFET PowerPAK 1212-8SH 300M , 7.5 m @ 10V m @ 7.5V 8.2 m @ 4.5
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
SISH112DN-T1-GE3 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
SISH112DN-T1-GE3 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Tags
SISH11, SISH1, SISH, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Бөлім № Mfg. Сипаттама Қор Бағасы
SISH112DN-T1-GE3
DISTI # V99:2348_22712067
Vishay IntertechnologiesN-Channel 30 V (D-S) Fast Switching MOSFET PowerPAK 1212-8SH 300M , 7.5 m @ 10V m @ 7.5V 8.2 m @ 4.56000
  • 3000:$0.5823
  • 1000:$0.6228
  • 500:$0.7961
  • 100:$0.9453
  • 10:$1.2084
  • 1:$1.6317
SISH112DN-T1-GE3
DISTI # SISH112DN-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 30V PPAK 1212-8SH
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
6050In Stock
  • 1000:$0.6976
  • 500:$0.8836
  • 100:$1.0696
  • 10:$1.3720
  • 1:$1.5300
SISH112DN-T1-GE3
DISTI # SISH112DN-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 30V PPAK 1212-8SH
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
6050In Stock
  • 1000:$0.6976
  • 500:$0.8836
  • 100:$1.0696
  • 10:$1.3720
  • 1:$1.5300
SISH112DN-T1-GE3
DISTI # SISH112DN-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 30V 1212-8 PPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
6000In Stock
  • 15000:$0.5779
  • 6000:$0.6005
  • 3000:$0.6321
SISH112DN-T1-GE3
DISTI # 31579471
Vishay IntertechnologiesN-Channel 30 V (D-S) Fast Switching MOSFET PowerPAK 1212-8SH 300M , 7.5 m @ 10V m @ 7.5V 8.2 m @ 4.56000
  • 3000:$0.5823
  • 1000:$0.6228
  • 500:$0.7961
  • 100:$0.9453
  • 11:$1.2084
SISH112DN-T1-GE3
DISTI # SISH112DN-T1-GE3
Vishay IntertechnologiesN-CH 30-V (D-S) FAST SWITCHING MOSFE - Tape and Reel (Alt: SISH112DN-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel
Americas - 0
  • 60000:$0.5509
  • 30000:$0.5659
  • 18000:$0.5819
  • 12000:$0.6069
  • 6000:$0.6249
SISH112DN-T1-GE3
DISTI # 81AC3493
Vishay IntertechnologiesN-CH 30-V (D-S) FAST SWITCHING MOSFE0
  • 10000:$0.5470
  • 6000:$0.5590
  • 4000:$0.5810
  • 2000:$0.6450
  • 1000:$0.7100
  • 1:$0.7400
SISH112DN-T1-GE3
DISTI # 99AC9582
Vishay IntertechnologiesMOSFET, N-CH, 30V, 11.3A, 150DEG C, 1.5W,Transistor Polarity:N Channel,Continuous Drain Current Id:11.3A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.5V,PowerRoHS Compliant: Yes50
  • 500:$0.8260
  • 250:$0.8930
  • 100:$0.9610
  • 50:$1.0500
  • 25:$1.1500
  • 10:$1.2400
  • 1:$1.5200
SISH112DN-T1-GE3
DISTI # 78-SISH112DN-T1-GE3
Vishay IntertechnologiesMOSFET 30V Vds 12V Vgs PowerPAK 1212-8
RoHS: Compliant
5944
  • 1:$1.5000
  • 10:$1.2300
  • 100:$0.9500
  • 500:$0.8170
  • 1000:$0.6440
  • 3000:$0.6010
  • 6000:$0.5710
  • 9000:$0.5500
SISH112DN-T1-GE3
DISTI # 3019128
Vishay IntertechnologiesMOSFET, N-CH, 30V, 11.3A, 150DEG C, 1.5W
RoHS: Compliant
50
  • 5000:$0.9140
  • 1000:$0.9200
  • 500:$1.1400
  • 250:$1.2500
  • 100:$1.3600
  • 25:$1.7400
  • 5:$1.9100
SISH112DN-T1-GE3
DISTI # 3019128
Vishay IntertechnologiesMOSFET, N-CH, 30V, 11.3A, 150DEG C, 1.5W50
  • 500:£0.5930
  • 250:£0.6420
  • 100:£0.6900
  • 10:£0.9380
  • 1:£1.2400
Сурет Бөлім № Сипаттама
SISH112DN-T1-GE3

Mfr.#: SISH112DN-T1-GE3

OMO.#: OMO-SISH112DN-T1-GE3

MOSFET 30V Vds 12V Vgs PowerPAK 1212-8
SISH112DN-T1-GE3

Mfr.#: SISH112DN-T1-GE3

OMO.#: OMO-SISH112DN-T1-GE3-VISHAY

N-Channel 30 V (D-S) Fast Switching MOSFET PowerPAK 1212-8SH 300M , 7.5 m @ 10V m @ 7.5V 8.2 m @ 4.5
Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
5000
Саны енгізіңіз:
SISH112DN-T1-GE3 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
0,00 $
0,00 $
10
0,00 $
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100
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500
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