OMO ElectronicOMO Electronic
Expand menu
0 Арба

IKW75N65EL5XKSA1

IKW75N65EL5XKSA1
Mfr. #:
IKW75N65EL5XKSA1
Өндіруші:
Infineon Technologies
Сипаттама:
IGBT Transistors 650V IGBT Trenchstop 5
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IKW75N65EL5XKSA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
IKW75N65EL5XKSA1 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
IGBT транзисторлары
RoHS:
Y
Технология:
Си
Пакет/қорап:
TO-247-3
Орнату стилі:
Тесік арқылы
Конфигурация:
Бойдақ
Коллектор-эмиттер кернеуі VCEO Max:
650 V
Коллектор-эмиттер қанығу кернеуі:
1.1 V
Шықпа эмитентінің максималды кернеуі:
20 V
Үздіксіз коллектор тогы 25 С:
80 A
Pd - қуаттың шығыны:
536 W
Ең төменгі жұмыс температурасы:
- 40 C
Максималды жұмыс температурасы:
+ 175 C
Серия:
TRENCHSTOP 5 L5
Қаптама:
Түтік
Бренд:
Infineon Technologies
Шлюз-эмиттер ағып кету тогы:
100 nA
Өнім түрі:
IGBT транзисторлары
Зауыттық буманың саны:
240
Ішкі санат:
IGBT
Сауда атауы:
TRENCHSTOP
Бөлім # Бүркеншік аттар:
IKW75N65EL5 SP001174464
Бірлік салмағы:
0.213478 oz
Tags
IKW75N65, IKW75N, IKW7, IKW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 650V 80A 536000mW 3-Pin(3+Tab) TO-247 Tube
***ark
Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.1V; Power Dissipation Pd:536W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IKW75N65EL5XKSA1
***ineon SCT
Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz, PG-TO247-3, RoHS
***ineon
Infineons new L5 low saturation voltage (V CE(sat)) TRENCHSTOP IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55m TRENCHSTOP 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level 1.05V for 30A IGBT and 1.10V for 75A IGBT. | Summary of Features: Lowest saturation voltage V CE(sat) of only 1.05V; Low switching losses of 1.6mJ @ 25C for 30A IGBT; High thermal stability of electrical parameters - only 2% drift with T j increase from 25C to 175C; Enhanced efficiency for 20% lower switching losses in TO-247 4pin Kelvin-Emitter package | Benefits: Higher efficiency for 50Hz; Longer lifetime and higher reliability of IGBT; High design reliability due to stable thermal performance | Target Applications: UPS; Solar; Welding
*** Stop Electro
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247
***ark
Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.35V; Power Dissipation Pd:230W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IHW40N65R5XKSA1
***ineon SCT
Infineon combines the industry leading performance of the TRENCHSTOP™ 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices, PG-TO247-3, RoHS
***ineon
Infineon combines the industry leading performance of the TRENCHSTOP 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices. With a monolithically integrated diode, the 650V RC-H5 IGBTs are perfectly suited for soft switching applications such as induction cooking stoves and inverterized microwave ovens, but are also suitable for designs which require some hard switching capabilities as well. | Summary of Features: Lowest V CE(sat) and optimized E off for loss reduction up to 30% compared to previous generation; 650V blocking voltage; Hard switching capable | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature for higher device reliability; 50V higher voltage possible for increased reliability; Performs well in designs with higher switching frequencies up to 40kHz | Target Applications: Induction cooking stoves; Inverterized microwave ovens; Other resonant switching topologies
***ure Electronics
IHW50N65R5 Series 650 V 80 A 282 W Reverse Conducting IGBT - PG-TO-247-3
***ark
Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.35V; Power Dissipation Pd:282W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IHW50N65R5XKSA1
***ineon SCT
Infineon combines the industry leading performance of the TRENCHSTOP™ 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices, PG-TO247-3, RoHS
***ineon
Infineon combines the industry leading performance of the TRENCHSTOP 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices. With a monolithically integrated diode, the 650V RC-H5 IGBTs are perfectly suited for soft switching applications such as induction cooking stoves and inverterized microwave ovens, but are also suitable for designs which require some hard switching capabilities as well. | Summary of Features: Lowest V CE(sat) and optimized E off for loss reduction up to 30% compared to previous generation; 650V blocking voltage; Hard switching capable | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature for higher device reliability; 50V higher voltage possible for increased reliability; Performs well in designs with higher switching frequencies up to 40kHz | Target Applications: Induction cooking stoves; Inverterized microwave ovens; Other resonant switching topologies
*** Stop Electro
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247
***ark
Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.4V; Power Dissipation Pd:230W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IKW40N65WR5XKSA1
***ineon
The reverse conducting TRENCHSTOP 5 WR5 IGBT was specifically optimized for full rated hard switching turn off typically found in Welding inverter application. Excellent price/performance ratio of WR5 IGBT allows access to the high performance technology also for cost sensitive customers. WR5 is recommended for use in AC-DC PFC stage in Welding, UPS and Solar. | Summary of Features: Optimized for full rated hard switching turn off typically found in Welding; Very low V ce(sat) of 1.35V @25C; Low E tot; Soft recovery and low Q rr for diode; Good R goff controllability | Benefits: Best price/performance ratio; Good fit to mainstream design of fsw>20kHz; Low T j & T c for lower heatsink and cooling cost | Target Applications: Welding; UPS; Solar
***roFlash
Igbt Single Transistor, 80 A, 1.7 V, 366 W, 650 V, To-247, 3 Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 650V 80A 36000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
NGTB40N65: 650 V 80 A 366 W Through Hole Field Stop II IGBT - TO-247-3
***nell
650V/40A FAST IGBT FSII T; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 366W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***ical
Trans IGBT Chip N=-CH 650V 80A 290000mW 3-Pin(3+Tab) TO-247AB Tube
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild®’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,W DIODE,650V,80A,TO247AB; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:650V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:650V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:290W
***ical
Trans IGBT Chip N=-CH 650V 80A 268000mW 3-Pin(3+Tab) TO-247 Tube
***ark
650V FIELD STOP TRENCH IGBT - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
***ure Electronics
FGH40T65UPD Series 650 V 40 A Field Stop Trench IGBT - TO-247-3
***rchild Semiconductor
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power generator where low conduction and switching losses are essential.
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 L5 (Low Saturation 5) IGBTs
Infineon TRENCHSTOP™ 5 L5 (Low Saturation 5) IGBTs are at the other end of the switching frequency range, and are optimized to deliver outstanding performance in designs switching <10kHz. Infineon's L5 have been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. The L5 offer a low VCE(sat) of 1.05V for 30A IGBTs, lowest switching losses in reactive power mode, at cos φ <1 and high thermal stability of electrical parameters. A new efficiency level is reachable with the 1.05V VCE(sat) TRENCHSTOP™ 5 L5 for low speed switching devices.
Бөлім № Mfg. Сипаттама Қор Бағасы
IKW75N65EL5XKSA1
DISTI # V36:1790_06376939		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
    IKW75N65EL5XKSA1
    DISTI # V99:2348_06376939    		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		0
      IKW75N65EL5XKSA1
      DISTI # IKW75N65EL5XKSA1IN-ND      		Infineon Technologies AGIGBT 650V 75A FAST DIODE TO247-3
      RoHS: Compliant
      Min Qty: 1
      Container: Tube      		On Order
      • 720:$6.1163
      • 240:$7.0239
      • 25:$8.0892
      • 10:$8.4840
      • 1:$9.3900
      IKW75N65EL5XKSA1
      DISTI # SP001174464      		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube (Alt: SP001174464)
      RoHS: Compliant
      Min Qty: 1
      Container: Tube      		Europe - 8
      • 1000:€3.8900
      • 500:€4.1900
      • 100:€4.2900
      • 50:€4.4900
      • 25:€4.6900
      • 10:€4.8900
      • 1:€5.2900
      IKW75N65EL5XKSA1
      DISTI # IKW75N65EL5XKSA1      		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: IKW75N65EL5XKSA1)
      RoHS: Compliant
      Min Qty: 240
      Container: Tube      		Americas - 0
      • 2400:$4.6900
      • 1440:$4.7900
      • 960:$4.9900
      • 480:$5.1900
      • 240:$5.3900
      IKW75N65EL5XKSA1
      DISTI # 726-IKW75N65EL5XKSA1      		Infineon Technologies AGIGBT Transistors 650V IGBT Trenchstop 5
      RoHS: Compliant      		1
      • 1:$8.9400
      • 10:$8.0800
      • 25:$7.7000
      • 100:$6.6900
      • 250:$6.3900
      • 500:$5.8200
      IKW75N65EL5XKSA1
      DISTI # 2709881      		Infineon Technologies AGIGBT, SINGLE, 650V, 80A, TO-247
      RoHS: Compliant      		0
      • 720:$9.2800
      • 240:$10.6500
      • 10:$12.8600
      • 1:$14.2200
      IKW75N65EL5XKSA1
      DISTI # 2709881      		Infineon Technologies AGIGBT, SINGLE, 650V, 80A, TO-247
      RoHS: Compliant      		0
      • 100:£5.1500
      • 50:£5.5400
      • 10:£5.9300
      • 5:£6.8900
      • 1:£7.4500
      Сурет Бөлім № Сипаттама
      STGAP2DMTR

      Mfr.#: STGAP2DMTR

      OMO.#: OMO-STGAP2DMTR

      		 Gate Drivers IND. & POWER CONV.
      IKY75N120CS6XKSA1

      Mfr.#: IKY75N120CS6XKSA1

      OMO.#: OMO-IKY75N120CS6XKSA1

      		 IGBT Transistors INDUSTRY 14
      IKA10N65ET6XKSA2

      Mfr.#: IKA10N65ET6XKSA2

      OMO.#: OMO-IKA10N65ET6XKSA2

      		 IGBT Transistors Discrete 650 V TRENCHSTOP IGBT6 with soft, fast recovery anti-parallel Rapid diode
      STPS2L40ZFY

      Mfr.#: STPS2L40ZFY

      OMO.#: OMO-STPS2L40ZFY

      		 Schottky Diodes & Rectifiers Automotive low drop power Schottky rectifier
      HM77-23006LFTR

      Mfr.#: HM77-23006LFTR

      OMO.#: OMO-HM77-23006LFTR

      		 Fixed Inductors 3.5uH LW PROFILE SM INDCTR
      ELHS501VSN471MA50S

      Mfr.#: ELHS501VSN471MA50S

      OMO.#: OMO-ELHS501VSN471MA50S

      		 Aluminum Electrolytic Capacitors - Snap In 470uF 20% 500V Long Life
      BBB01-SC-505

      Mfr.#: BBB01-SC-505

      OMO.#: OMO-BBB01-SC-505

      		 Single Board Computers Beaglebone Black Rev C
      DDR-120B-24

      Mfr.#: DDR-120B-24

      OMO.#: OMO-DDR-120B-24-MEAN-WELL

      		 DC/DC CONVERTER 24V 120W
      STGAP2DMTR

      Mfr.#: STGAP2DMTR

      OMO.#: OMO-STGAP2DMTR-STMICROELECTRONICS

      		 Driver 2-OUT Half Brdg 16-Pin SO N T/R
      STPS2L40ZFY

      Mfr.#: STPS2L40ZFY

      OMO.#: OMO-STPS2L40ZFY-STMICROELECTRONICS

      		 DIODE SCHOTTKY 40V 2A SOD123F
      Қол жетімділік
      Қор:
      Available
      Тапсырыс бойынша:
      1984
      Саны енгізіңіз:
      IKW75N65EL5XKSA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
      Анықтамалық баға (USD)
      Саны
      Тауар өлшемінің бағасы
      Қосымша. Бағасы
      1
      8,94 $
      8,94 $
      10
      8,08 $
      80,80 $
      25
      7,70 $
      192,50 $
      100
      6,69 $
      669,00 $
      250
      6,39 $
      1 597,50 $
      500
      5,82 $
      2 910,00 $
      -ден бастаңыз
      Ең жаңа өнімдер
      • XDPL8218 Voltage Flyback IC
        XDPL8218 Voltage Flyback IC
        Infineon's XDPL8218 is a configurable single-stage SSR flyback controller with high power factor, standby power performance, and constant voltage output.
      • LMD and LMS Modular Connectors
        LMD and LMS Modular Connectors
        LMD and LMS modular connectors from Amphenol eliminate costly PC board and associated hardware therefore reducing assembly and production costs.
      • XC6216 Series Voltage Regulator
        XC6216 Series Voltage Regulator
        Torex's XC6216 series voltage regulator with a maximum output current of 150 mA and 28 V operating voltage used in a variety of consumer products.
      • Compare IKW75N65EL5XKSA1
        Compare IKW75N65EL5XKSA1
        IKW75N65EH5 vs IKW75N65EH5K75EEH5 vs IKW75N65EH5XKSA1
      • TLF502x1EL Step-Down DC / DC
        TLF502x1EL Step-Down DC / DC
        Infineon's TLF502x1-family are asynchronous DC / DCs with integrated power transistor providing 500 mA output current at 5 V (±2%).
      • 600 V CoolMOS™ P7 Power Transistors
        600 V CoolMOS™ P7 Power Transistors
        Infineon‘s 600 V CoolMOS™ P7 series SJ MOSFET in TO-247 4-pin packaging with asymmetric leads.
      More Newest Products
      Top