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SUP50N10-21P-GE3

SUP50N10-21P-GE3
Mfr. #:
SUP50N10-21P-GE3
Өндіруші:
Vishay / Siliconix
Сипаттама:
MOSFET 100V N-Channel
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
SUP50N10-21P-GE3 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SUP50N10-21P-GE3 DatasheetSUP50N10-21P-GE3 Datasheet (P4-P6)SUP50N10-21P-GE3 Datasheet (P7)
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Вишай
Өнім санаты:
MOSFET
RoHS:
E
Технология:
Си
Орнату стилі:
Тесік арқылы
Пакет/қорап:
TO-220-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
100 V
Идентификатор - үздіксіз төгу тогы:
50 A
Rds On - ағызу көзіне қарсылық:
17 mOhms
Vgs th - Gate-Source шекті кернеуі:
2 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
68 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
125 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
TrenchFET
Қаптама:
Түтік
Серия:
SUP
Транзистор түрі:
1 N-Channel
Бренд:
Вишай / Силиконикс
Форвард өткізгіштік - Мин:
40 S
Күз уақыты:
7 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
10 ns
Зауыттық буманың саны:
50
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
22 ns
Қосудың әдеттегі кешігу уақыты:
10 ns
Бөлім # Бүркеншік аттар:
SUP40N10-30-GE3
Бірлік салмағы:
0.211644 oz
Tags
SUP50N1, SUP50N, SUP50, SUP5, SUP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 0.021 O 30.2 nC Flange Mount Power Mosfet - TO-220AB
***ical
Trans MOSFET N-CH 100V 50A 3-Pin(3+Tab) TO-220AB
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 50A I(D), 100V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***et
Trans MOSFET N-CH 100V 60A 3-Pin(3+Tab) TO-220AB
***i-Key
MOSFET N-CH 100V 60A TO220AB
***nell
N CHANNEL MOSFET, 100V, 60A; Transistor; N CHANNEL MOSFET, 100V, 60A; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 18.3mohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; No. of Pins: 3
***i-Key
MOSFET N-CH 100V 54A TO220-3
*** Electronics
N-CHANNEL POWER MOSFET
***et Europe
Trans MOSFET N-CH 100V 47A 3-Pin TO-220AB Tube
*** Electronics
MOSFET SIPMOS PWR-TRANS 100V 47A
***ineon
Summary of Features: N-Channel; Enhancement mode; Logic Level; 175C operating temperature; Avalanche rated; dv/dt rated; Green Package (lead free) | Benefits: highest current capability 180A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: 48V inverter; 48V DC/DC; HID lighting
***ure Electronics
Single N-Channel 100 V 2.8 W 31.9 nC Silicon Through Hole Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 100V 60A 3-Pin(3+Tab) TO-220AB Tube
***des Inc SCT
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 100 V, RoHS
***et
MOSFET BVDSS: 61V~100V TO220-3 TUBE 50PCS
***ure Electronics
Single N-Channel 75 V 10.6 mOhm 55 nC HEXFET® Power Mosfet - TO-220-3
***p One Stop
Trans MOSFET N-CH 75V 59A 3-Pin(3+Tab) TO-220AB Tube
***trelec
MOSFET Operating temperature: -55...+175 °C Housing type: TO-220AB Polarity: N Power dissipation: 99 W
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 59A I(D), 75V, 0.0106ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N-CH, 75V, 59A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 59A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0106ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V;
***ineon
Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET
***ure Electronics
FDPF085N10A Series 100 V 40 A 8.5 mOhm N-Ch PowerTrench® MOSFET - TO-220F
***emi
N-Channel PowerTrench® MOSFET 100V, 40A, 8.5mΩ
***Yang
Trans MOSFET N-CH 100V 40A 3-Pin(3+Tab) TO-220F T/R - Rail/Tube
***nell
MOSFET, N-CH, 100V, 40A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;
*** Stop Electro
Power Field-Effect Transistor, 40A I(D), 100V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Бөлім № Mfg. Сипаттама Қор Бағасы
SUP50N10-21P-GE3
DISTI # SUP50N10-21P-GE3-ND		Vishay SiliconixMOSFET N-CH 100V 50A TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		150In Stock
  • 100:$1.2667
  • 10:$1.6030
  • 1:$1.8100
SUP50N10-21P-GE3
DISTI # 78-SUP50N10-21P-GE3		Vishay IntertechnologiesMOSFET 100V N-Channel
RoHS: Compliant		51
  • 1:$1.6500
  • 10:$1.3600
  • 100:$1.0400
  • 500:$0.8940
  • 1000:$0.7050
SUP50N10-21P-GE3
DISTI # TMOSP11137		Vishay IntertechnologiesN-CH 100V 50A 21mOhm TO220
RoHS: Compliant		Stock DE - 0Stock US - 0
  • 500:$0.9915
  • 1000:$0.7649
SUP50N1021PGE3Vishay IntertechnologiesPower Field-Effect Transistor, 50A I(D), 100V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		Europe - 500
    SUP50N10-21P-GE3Vishay IntertechnologiesMOSFET 100V N-ChannelAmericas -
      Сурет Бөлім № Сипаттама
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      34961-0340

      Mfr.#: 34961-0340

      OMO.#: OMO-34961-0340-393

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      OMO.#: OMO-CRCW120610K0FKEAC-VISHAY-DALE

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      Mfr.#: EMHS800ARA181MKE0S

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      Қол жетімділік
      Қор:
      Available
      Тапсырыс бойынша:
      1984
      Саны енгізіңіз:
      SUP50N10-21P-GE3 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
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