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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| BSB056N10NN3 G DISTI # C1S322000455023 | Infineon Technologies AG | Trans MOSFET N-CH 100V 9A 7-Pin WDSON RoHS: Compliant | 12 |
|
| BSB056N10NN3GXUMA1 DISTI # BSB056N10NN3GXUMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 100V 9A WDSON-2 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 24055In Stock |
|
| BSB056N10NN3GXUMA1 DISTI # BSB056N10NN3GXUMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 100V 9A WDSON-2 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 24055In Stock |
|
| BSB056N10NN3GXUMA1 DISTI # BSB056N10NN3GXUMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 9A WDSON-2 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | 10000In Stock |
|
| BSB056N10NN3G DISTI # SP000604540 | Infineon Technologies AG | Trans MOSFET N-CH 100V 9A 7-Pin WDSON-2 T/R (Alt: SP000604540) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Europe - 0 |
|
| BSB056N10NN3GXUMA1 DISTI # BSB056N10NN3GXUMA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 9A 7-Pin WDSON-2 T/R - Tape and Reel (Alt: BSB056N10NN3GXUMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSB056N10NN3GXUMA1 DISTI # SP000604540 | Infineon Technologies AG | Trans MOSFET N-CH 100V 9A 7-Pin WDSON-2 T/R (Alt: SP000604540) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Europe - 0 |
|
| BSB056N10NN3GXUMA1 DISTI # 47Y7989 | Infineon Technologies AG | MOSFET Transistor, N Channel, 83 A, 100 V, 0.005 ohm, 10 V, 2.7 V , RoHS Compliant: Yes | 0 | |
| BSB056N10NN3 G DISTI # 726-BSB056N10NN3G | Infineon Technologies AG | MOSFET N-Ch 100V 83A CanPAK3 MN OptiMOS 3 RoHS: Compliant | 8546 |
|
| BSB056N10NN3 G E8182 DISTI # N/A | Infineon Technologies AG | MOSFET | 0 | |
| BSB056N10NN3G | Infineon Technologies AG | Power Field-Effect Transistor, 9A I(D), 100V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 4793 |
|
| BSB056N10NN3GXUMA1 DISTI # 9064393P | Infineon Technologies AG | MOSFET N-CHANNEL 100V 9A OPTIMOS WDSON, RL | 5 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: BSB056N10NN3 G OMO.#: OMO-BSB056N10NN3-G |
MOSFET N-Ch 100V 83A CanPAK3 MN OptiMOS 3 |
|
|
Mfr.#: BSB056N10NN3GXUMA1 OMO.#: OMO-BSB056N10NN3GXUMA1 |
MOSFET MV POWER MOS |
|
Mfr.#: BSB056N10NN3 G OMO.#: OMO-BSB056N10NN3-G-1190 |
Trans MOSFET N-CH 100V 9A 7-Pin WDSON |
|
|
Mfr.#: BSB056N10NN3G OMO.#: OMO-BSB056N10NN3G-1190 |
Trans MOSFET N-CH 100V 9A 7-Pin WDSON-2 T/R (Alt: SP000604540) |
|
Mfr.#: BSB056N10NN3GXUMA1 |
MOSFET N-CH 100V 9A WDSON-2 |
