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BSZ097N10NS5ATMA1

BSZ097N10NS5ATMA1
Mfr. #:
BSZ097N10NS5ATMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET N-Ch 100V 40A TSDSON-8
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
BSZ097N10NS5ATMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
BSZ097N10NS5ATMA1 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
TSDSON-8
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
100 V
Идентификатор - үздіксіз төгу тогы:
40 A
Rds On - ағызу көзіне қарсылық:
8.3 mOhms
Vgs th - Gate-Source шекті кернеуі:
2.2 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
28 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
69 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
OptiMOS
Қаптама:
Ролик
Биіктігі:
1.1 mm
Ұзындығы:
3.3 mm
Серия:
OptiMOS 5
Транзистор түрі:
1 N-Channel
Ені:
3.3 mm
Бренд:
Infineon Technologies
Форвард өткізгіштік - Мин:
23 S
Күз уақыты:
5 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
5 ns
Зауыттық буманың саны:
5000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
21 ns
Қосудың әдеттегі кешігу уақыты:
11 ns
Бөлім # Бүркеншік аттар:
BSZ097N10NS5 SP001132550
Бірлік салмағы:
0.001295 oz
Tags
BSZ097N10NS5A, BSZ097N1, BSZ097, BSZ09, BSZ0, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    R***r
    R***r
    BR

    Product arrived fast very good. Great seller.

    2019-05-18
    D***v
    D***v
    RU

    Went for a very long time 3 months 2 boards working 1 when connecting suffocated can my cant prodovets recommend

    2019-05-03
    L***v
    L***v
    RU

    Ultrafast delivery, great quality. Awesome packing skills:D Thank you!

    2019-03-24
***ure Electronics
BSZ097xx Series 100 V 40 A 9.7 mOhm OptiMOS™5 Power-MOSFET - TSDSON-8 FL
***ment14 APAC
MOSFET, N-CH, 100V, 40A, TSDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Source Voltage Vds:100V; On Resistance
***nell
MOSFET, N-CH, 100V, 40A, TSDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0083ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 69W; Transistor Case Style: TSDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
OptiMOS 5 100V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 100V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 43% from previous generation | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
***Yang
Trans MOSFET N-CH 80V 40A 8-Pin TSDSON T/R - Product that comes on tape, but is not reeled
***ure Electronics
Single N-Channel 80 V 7.5 mOhm 24 nC OptiMOS™ Power Mosfet - TSDSON-8 FL
***ment14 APAC
MOSFET, N-CH, 80V, 40A, TSDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Source Voltage Vds:80V; On Resistance
***ineon SCT
Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in S3O8 package, PG-TSDSON-8, RoHS
***ark
MOSFET, N-CH, 80V, 40A, 150DEG C, 69W; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***nell
MOSFET, N-CH, 80V, 40A, TSDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0062ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 69W; Transistor Case Style: TSDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
***emi
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***el Electronic
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***ure Electronics
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*** Stop Electro
Power Field-Effect Transistor, 12A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
***nell
MOSFET, N CH, 100V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0064ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***Yang
Trans MOSFET N-CH 80(Min)V 50A 7-Pin WDSON T/R - Tape and Reel
***ponent Sense
MOSFET N-CH 80V 50A OPTIMOS MP PACKAGE 1
***ineon SCT
OptiMOS™ is the market leader in highly efficient solutions for power generation (e, MG-WDSON-2, RoHS
***i-Key
MOSFET N-CH 80V 13A/50A 2WDSON
***ineon
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control
***ical
Trans MOSFET N-CH 80V 40A Automotive 8-Pin TSDSON EP T/R
***ark
MOSFET, N-CH, 80V, 40A, TSDSON; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Qualification:-RoHS Compliant: Yes
***ineon SCT
Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in S3O8 package, PG-TSDSON-8, RoHS
***nell
MOSFET, N-CH, 80V, 40A, TSDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0071ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 63W; Transistor Case Style: TSDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
***ure Electronics
N-Channel 100 V 8.9 mOhm 125 W SMT ThunderFET Power Mosfet - TO-263
***ical
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***S.I.T. Europe - USA - Asia
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***ark
Mosfet, N-Ch, 100V, 29.5A, Soic Rohs Compliant: Yes
***des Inc SCT
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***ical
Trans MOSFET N-CH 100V 11.5A 8-Pin SO T/R
***et
MOSFET BVDSS: 61V~100V SO-8 T&R 2.5K
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Бөлім № Mfg. Сипаттама Қор Бағасы
BSZ097N10NS5ATMA1
DISTI # BSZ097N10NS5ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 40A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3774In Stock
  • 1000:$0.8199
  • 500:$0.9896
  • 100:$1.2723
  • 10:$1.5830
  • 1:$1.7500
BSZ097N10NS5ATMA1
DISTI # BSZ097N10NS5ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 40A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3774In Stock
  • 1000:$0.8199
  • 500:$0.9896
  • 100:$1.2723
  • 10:$1.5830
  • 1:$1.7500
BSZ097N10NS5ATMA1
DISTI # BSZ097N10NS5ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 40A TSDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.7302
BSZ097N10NS5ATMA1
DISTI # BSZ097N10NS5ATMA1		Infineon Technologies AGMOSFET N-CH 100V 40A TSDSON-8 - Tape and Reel (Alt: BSZ097N10NS5ATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.6499
  • 10000:$0.6479
  • 20000:$0.6469
  • 30000:$0.6449
  • 50000:$0.6439
BSZ097N10NS5ATMA1
DISTI # 13AC8353		Infineon Technologies AGMOSFET, N-CH, 100V, 40A, TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0083ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes619
  • 1000:$0.7490
  • 500:$0.9490
  • 250:$1.0100
  • 100:$1.0800
  • 50:$1.1900
  • 25:$1.2900
  • 10:$1.4000
  • 1:$1.6400
BSZ097N10NS5ATMA1
DISTI # 726-BSZ097N10NS5ATMA		Infineon Technologies AGMOSFET N-Ch 100V 40A TSDSON-8
RoHS: Compliant		3270
  • 1:$1.6400
  • 10:$1.4000
  • 100:$1.0800
  • 500:$0.9490
  • 1000:$0.7490
  • 5000:$0.6640
BSZ097N10NS5
DISTI # 726-BSZ097N10NS5		Infineon Technologies AGMOSFET N-Ch 100V 40A TSDSON-8
RoHS: Compliant		6821
  • 1:$1.6400
  • 10:$1.4000
  • 100:$1.0800
  • 500:$0.9490
  • 1000:$0.7490
  • 5000:$0.6640
BSZ097N10NS5ATMA1
DISTI # 1702300		Infineon Technologies AGMOSFET N-CH 100V 40A OPTIMOS5 TSDSON8 FL, RL4960
  • 5000:£0.4960
  • 10000:£0.4920
BSZ097N10NS5ATMA1
DISTI # 2725825		Infineon Technologies AGMOSFET, N-CH, 100V, 40A, TSDSON
RoHS: Compliant		419
  • 1000:$1.3100
  • 500:$1.5800
  • 100:$2.0300
  • 10:$2.5300
  • 1:$2.8000
BSZ097N10NS5ATMA1
DISTI # 2725825		Infineon Technologies AGMOSFET, N-CH, 100V, 40A, TSDSON
RoHS: Compliant		409
  • 500:£0.7300
  • 250:£0.7820
  • 100:£0.8330
  • 25:£0.9320
  • 5:£1.0300
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Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
4500
Саны енгізіңіз:
BSZ097N10NS5ATMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
1,63 $
1,63 $
10
1,39 $
13,90 $
100
1,07 $
107,00 $
500
0,95 $
474,50 $
1000
0,75 $
749,00 $
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