We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| SGB02N120ATMA1 DISTI # SGB02N120ATMA1TR-ND | Infineon Technologies AG | IGBT 1200V 6.2A 62W TO263-3 Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call |
|
| SGB02N120ATMA1 DISTI # SGB02N120ATMA1CT-ND | Infineon Technologies AG | IGBT 1200V 6.2A 62W TO263-3 Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SGB02N120ATMA1 DISTI # SGB02N120ATMA1DKR-ND | Infineon Technologies AG | IGBT 1200V 6.2A 62W TO263-3 Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SGB02N120ATMA1 DISTI # SP000012558 | Infineon Technologies AG | Trans IGBT Chip N-CH 1200V 6.2A 3-Pin TO-263 T/R (Alt: SP000012558) Min Qty: 1000 Container: Tape and Reel | Europe - 0 |
|
| SGB02N120XT DISTI # SGB02N120ATMA1 | Infineon Technologies AG | Trans IGBT Chip N-CH 1.2KV 6.2A 3-Pin(2+Tab) TO-263 T/R - Tape and Reel (Alt: SGB02N120ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
|
| SGB02N120ATMA1 DISTI # 43AC4018 | Infineon Technologies AG | IGBT, SINGLE, 1.2KV, 6.2A, TO-263-3,DC Collector Current:6.2A,Collector Emitter Saturation Voltage Vce(on):3.1V,Power Dissipation Pd:62W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-263,No. of Pins:3Pins,RoHS Compliant: Yes RoHS: Compliant | 1421 |
|
| SGB02N120 DISTI # 726-SGB02N120 | Infineon Technologies AG | IGBT Transistors FAST IGBT NPT TECH 1200V 2A RoHS: Compliant | 4714 |
|
| SGB02N120ATMA1 DISTI # N/A | Infineon Technologies AG | IGBT Transistors IGBT PRODUCTS | 0 | |
| SGB02N120ATMA1 DISTI # 2803433 | Infineon Technologies AG | IGBT, SINGLE, 1.2KV, 6.2A, TO-263-3 RoHS: Compliant | 1421 |
|
| SGB02N120ATMA1 DISTI # 2803433 | Infineon Technologies AG | IGBT, SINGLE, 1.2KV, 6.2A, TO-263-3 | 2561 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: SGB02N120 OMO.#: OMO-SGB02N120-126 |
IGBT Transistors FAST IGBT NPT TECH 1200V 2A |
|
Mfr.#: SGB02N60ATMA1 |
IGBT 600V 6A 30W TO263-3 |
|
|
Mfr.#: SGB1025L-T OMO.#: OMO-SGB1025L-T-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: SGB15N60 OMO.#: OMO-SGB15N60-1190 |
Trans IGBT Chip N-CH 600V 31A 3-Pin TO-263 T/R - Bulk (Alt: SGB15N60) |
|
|
Mfr.#: SGB2400 OMO.#: OMO-SGB2400-1152 |
RF Amplifier DC-4GHz NF 3.5dB P1dB 6.9dBm |
|
|
Mfr.#: SGB6533Z OMO.#: OMO-SGB6533Z-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: SGB6533ZSR OMO.#: OMO-SGB6533ZSR-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: SGB8206NTF4G OMO.#: OMO-SGB8206NTF4G-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: SGBJ15G OMO.#: OMO-SGBJ15G-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: SGBJ3512 OMO.#: OMO-SGBJ3512-1190 |
DIODE, BRIDGE RECT, 3PH, 35A, 1.2KV, SIP |