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BSZ440N10NS3GATMA1

BSZ440N10NS3GATMA1
Mfr. #:
BSZ440N10NS3GATMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET N-Ch 100V 18A TSDSON-8 OptiMOS 3
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
BSZ440N10NS3GATMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
TSDSON-8
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
100 V
Идентификатор - үздіксіз төгу тогы:
18 A
Rds On - ағызу көзіне қарсылық:
38 mOhms
Vgs th - Gate-Source шекті кернеуі:
2 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
9.1 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
29 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
OptiMOS
Қаптама:
Ролик
Биіктігі:
1.1 mm
Ұзындығы:
3.3 mm
Серия:
OptiMOS 3
Транзистор түрі:
1 N-Channel
Ені:
3.3 mm
Бренд:
Infineon Technologies
Форвард өткізгіштік - Мин:
8 S
Күз уақыты:
2 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
1.8 ns
Зауыттық буманың саны:
5000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
9.1 ns
Қосудың әдеттегі кешігу уақыты:
4.3 ns
Бөлім # Бүркеншік аттар:
BSZ440N10NS3 BSZ44N1NS3GXT G SP000482442
Бірлік салмағы:
0.003351 oz
Tags
BSZ440N10NS3G, BSZ44, BSZ4, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 44 mOhm 9.1 nC OptiMOS™ Power Mosfet - TSDSON-8
***p One Stop
Trans MOSFET N-CH 100V 5.3A Automotive 8-Pin TSDSON EP T/R
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TSDSON-8, RoHS
***nell
MOSFET, N-CH, 100V, 18A, 8TSDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power Dissipation Pd:29W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***ure Electronics
N-Channel 100 V 44 mOhm OptiMOS™3 Power-Transistor - PG-TDSON-8
***ark
MOSFET, N-CH, 100V, 18A, 150DEG C, 29W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:18A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.7V RoHS Compliant: Yes
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
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N-Channel 100 V 0.25 Ohm Surface Mount STripFET™ Power MosFet - TO-252-3
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MOSFET, N CHANNEL, 100V, 6A, DPAK; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 6A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, N CH, 100V, 6A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.22ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 30W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 6A; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 100V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
***eco
Transistor MOSFET P Channel 100 Volt 6.6 Amp 3 Pin 2+ Tab Dpak
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***(Formerly Allied Electronics)
MOSFET, P-CHANNEL, -100V, -6.5A, 480 mOhm, 18 nC Qg, D-Pak
***ineon SCT
-100V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***ark
Transistor Polarity:p Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:6.6A; On Resistance Rds(On):0.48Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:-Rohs Compliant: Yes
***roFlash
Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***emi
N-Channel Power MOSFET, Logic Level, QFET®, 100 V, 5.8 A, 350 mΩ, DPAK
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*** Stop Electro
Power Field-Effect Transistor, 5.8A I(D), 100V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, N CH, 100V, 5.8A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.8A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.27; Available until stocks are exhausted Alternative available
***rchild Semiconductor
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***el Electronic
VISHAY SIB456DK-T1-GE3 MOSFET Transistor, N Channel, 6.3 A, 100 V, 0.153 ohm, 10 V, 1.6 V
***S.I.T. Europe - USA - Asia
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***et
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***enic
100V 6.3A 13W 185m´Î@10V1.9A 3V@250Ã×A N Channel PowerPAK SC-75-6L MOSFETs ROHS
***ure Electronics
100V 6.3A 0.185OHM PPAK SC-75 THUNDERFET
***or
MOSFET N-CH 100V 6.3A PPAK SC75
Бөлім № Mfg. Сипаттама Қор Бағасы
BSZ440N10NS3GATMA1
DISTI # V36:1790_06384861		Infineon Technologies AGTrans MOSFET N-CH 100V 5.3A Automotive 8-Pin TSDSON EP T/R
RoHS: Compliant		15000
  • 5000:$0.3499
BSZ440N10NS3GATMA1
DISTI # V72:2272_06384861		Infineon Technologies AGTrans MOSFET N-CH 100V 5.3A Automotive 8-Pin TSDSON EP T/R
RoHS: Compliant		5208
  • 3000:$0.3889
  • 1000:$0.3947
  • 500:$0.4862
  • 250:$0.5077
  • 100:$0.5641
  • 25:$0.6582
  • 10:$0.8043
  • 1:$0.9337
BSZ440N10NS3GATMA1
DISTI # BSZ440N10NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 18A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		41295In Stock
  • 1000:$0.4279
  • 500:$0.5421
  • 100:$0.6562
  • 10:$0.8420
  • 1:$0.9400
BSZ440N10NS3GATMA1
DISTI # BSZ440N10NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 18A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		41295In Stock
  • 1000:$0.4279
  • 500:$0.5421
  • 100:$0.6562
  • 10:$0.8420
  • 1:$0.9400
BSZ440N10NS3GATMA1
DISTI # BSZ440N10NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 18A TSDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		40000In Stock
  • 25000:$0.3508
  • 10000:$0.3545
  • 5000:$0.3684
BSZ440N10NS3GATMA1
DISTI # 33359028		Infineon Technologies AGTrans MOSFET N-CH 100V 5.3A Automotive 8-Pin TSDSON EP T/R
RoHS: Compliant		15000
  • 5000:$0.3499
BSZ440N10NS3GATMA1
DISTI # 30302404		Infineon Technologies AGTrans MOSFET N-CH 100V 5.3A Automotive 8-Pin TSDSON EP T/R
RoHS: Compliant		5208
  • 21:$0.9337
BSZ440N10NS3GATMA1
DISTI # 33623146		Infineon Technologies AGTrans MOSFET N-CH 100V 5.3A Automotive 8-Pin TSDSON EP T/R
RoHS: Compliant		5000
  • 5000:$0.4641
BSZ440N10NS3GATMA1
DISTI # SP000482442		Infineon Technologies AGTrans MOSFET N-CH 100V 5.3A 8-Pin TSDSON T/R (Alt: SP000482442)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 25000
  • 50000:€0.2719
  • 30000:€0.2929
  • 20000:€0.3259
  • 10000:€0.3659
  • 5000:€0.4319
BSZ440N10NS3GXT
DISTI # BSZ440N10NS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 5.3A 8-Pin TSDSON EP - Tape and Reel (Alt: BSZ440N10NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 5000
  • 50000:$0.2679
  • 30000:$0.2719
  • 20000:$0.2819
  • 10000:$0.2929
  • 5000:$0.3039
BSZ440N10NS3GATMA1
DISTI # 47W3367		Infineon Technologies AGMOSFET, N CHANNEL, 100V, 18A, 8TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.038ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V RoHS Compliant: Yes5049
  • 1000:$0.4000
  • 500:$0.5070
  • 100:$0.5740
  • 10:$0.7460
  • 1:$0.8690
BSZ440N10NS3GATMA1.
DISTI # 27AC1117		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.038ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power Dissipation Pd:29W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 50000:$0.2680
  • 30000:$0.2720
  • 20000:$0.2820
  • 10000:$0.2930
  • 1:$0.3040
BSZ440N10NS3 G
DISTI # 726-BSZ440N10NS3G		Infineon Technologies AGMOSFET N-Ch 100V 18A TSDSON-8 OptiMOS 3
RoHS: Compliant		46981
  • 1:$0.8600
  • 10:$0.7390
  • 100:$0.5680
  • 500:$0.5020
  • 1000:$0.3960
  • 5000:$0.3510
  • 10000:$0.3380
BSZ440N10NS3GATMA1
DISTI # 726-BSZ440N10NS3GATM		Infineon Technologies AGMOSFET N-Ch 100V 18A TSDSON-8 OptiMOS 3
RoHS: Compliant		9280
  • 1:$0.8600
  • 10:$0.7390
  • 100:$0.5680
  • 500:$0.5020
  • 1000:$0.3960
  • 5000:$0.3510
  • 10000:$0.3380
BSZ440N10NS3GATMA1Infineon Technologies AGSingle N-Channel 100 V 44 mOhm 9.1 nC OptiMOS Power Mosfet - TSDSON-8
RoHS: Not Compliant		5000Reel
  • 5000:$0.3300
BSZ440N10NS3GATMA1
DISTI # BSZ440N10NS3GATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,100V,18A,29W,PG-TSDSON-83449
  • 1000:$0.2815
  • 100:$0.3029
  • 10:$0.3514
  • 3:$0.4484
  • 1:$0.6009
BSZ440N10NS3GATMA1
DISTI # 2212840		Infineon Technologies AGMOSFET, N-CH, 100V, 18A, 8TSDSON5957
  • 500:£0.3910
  • 250:£0.4170
  • 100:£0.4420
  • 10:£0.6290
  • 1:£0.7650
BSZ440N10NS3GATMA1
DISTI # XSFP00000040990		Infineon Technologies AG 
RoHS: Compliant		10000 in Stock0 on Order
  • 10000:$0.4400
  • 5000:$0.4714
BSZ440N10NS3GATMA1
DISTI # XSKDRABV0051829		Infineon Technologies AG 
RoHS: Compliant		15000 in Stock0 on Order
  • 15000:$0.3467
  • 5000:$0.3714
BSZ440N10NS3GATMA1
DISTI # 2212840		Infineon Technologies AGMOSFET, N-CH, 100V, 18A, 8TSDSON
RoHS: Compliant		5044
  • 25000:$0.5040
  • 10000:$0.5200
  • 5000:$0.5400
  • 1000:$0.6090
  • 500:$0.7730
  • 100:$0.8740
  • 10:$1.1400
  • 1:$1.3300
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Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
1992
Саны енгізіңіз:
BSZ440N10NS3GATMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
0,86 $
0,86 $
10
0,74 $
7,39 $
100
0,57 $
56,80 $
500
0,50 $
251,00 $
1000
0,40 $
396,00 $
2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
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