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IRFS3307ZTRLPBF

IRFS3307ZTRLPBF
Mfr. #:
IRFS3307ZTRLPBF
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET MOSFT 75V 120A 5.8mOhm 79nC Qg
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IRFS3307ZTRLPBF Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFS3307ZTRLPBF DatasheetIRFS3307ZTRLPBF Datasheet (P4-P6)IRFS3307ZTRLPBF Datasheet (P7-P9)IRFS3307ZTRLPBF Datasheet (P10-P11)
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
TO-263-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
75 V
Идентификатор - үздіксіз төгу тогы:
128 A
Rds On - ағызу көзіне қарсылық:
5.8 mOhms
Vgs th - Gate-Source шекті кернеуі:
4 V
Qg - қақпа заряды:
110 nC
Максималды жұмыс температурасы:
+ 175 C
Pd - қуаттың шығыны:
230 W
Конфигурация:
Бойдақ
Қаптама:
Ролик
Биіктігі:
4.4 mm
Ұзындығы:
10 mm
Транзистор түрі:
1 N-Channel
Ені:
9.25 mm
Бренд:
Infineon Technologies
Форвард өткізгіштік - Мин:
320 S
Күз уақыты:
65 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
64 ns
Зауыттық буманың саны:
800
Ішкі санат:
MOSFETs
Бөлім # Бүркеншік аттар:
SP001565042
Бірлік салмағы:
0.139332 oz
Tags
IRFS3307Z, IRFS3307, IRFS330, IRFS33, IRFS3, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 75V 5.8 mOhm 79 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***Yang
Trans MOSFET N-CH 75V 120A 3-Pin D2PAK T/R - Tape and Reel
***(Formerly Allied Electronics)
MOSFET, 75V, 120A, 5.8 MOHM, 79 NC QG, D2-PAK | Infineon IRFS3307ZTRLPBF
***ark
N CH POWER MOSFET, HEXFET, 75V, 120A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:75V; On Resistance Rds(on):5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: Yes
***nsix Microsemi
Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N-CH, 75V, 120A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0046ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 230W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ark
Mosfet Transistor, N Channel, 135 A, 55 V, 4.7 Mohm, 10 V, 4 V
***(Formerly Allied Electronics)
IRF2805SPBF N-channel MOSFET Module, 135 A, 55 V, 3-Pin D2PAK | Infineon IRF2805SPBF
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 55 V 4.7 mOhm 150 nC HEXFET® Power Mosfet - D2PAK
***Yang
Trans MOSFET N-CH 55V 135A 3-Pin(2+Tab) D2PAK - Rail/Tube
*** Stop Electro
Power Field-Effect Transistor, 75A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***trelec
Power FET Operating temperature: -55...+175 °C Housing type: DPAK Polarity: N Variants: Enhancement mode Power dissipation: 200 W
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***nell
MOSFET, N, 55V, 135A, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 135A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
***ure Electronics
Single N-Channel 55V 5.3 mOhm 170 nC HEXFET® Power Mosfet - D2PAK
*** Source Electronics
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A⑥) | MOSFET N-CH 55V 131A D2PAK
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH Si 55V 131A 3-Pin(2+Tab) D2PAK Tube
***eco
IRF1405STRLPBF,MOSFET, 55V, 13 1A, 5.3 MOHM, 170 NC QG, D2-P
***ark
Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:131A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:200W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon IRF1405STRLPBF.
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***icroelectronics
N-CHANNEL 75V - 0.0065OHM -120A D2PAK STripFET II MOSFET
***roFlash
Mosfet Transistor, N Channel, 70 A, 75 V, 6.5 Mohm, 10 V, 4 V
***ical
Trans MOSFET N-CH 75V 120A 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
N-Channel 75 V 0.0075 O 160 nC Surface Mount STripFET™II MosFet - D2PAK
***ark
MOSFET, N CH, 75V, 120A, D2PAK; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:70A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Product Range:-RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 120A I(D), 75V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
***nell
MOSFET, N CH, 75V, 120A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 70A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 310W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 120A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 75V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
***icroelectronics
N-CHANNEL 55V - 0.005 OHM -120A D2PAK STripFET II MOSFET
***ical
Trans MOSFET N-CH 55V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 120A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ment14 APAC
MOSFET, N CH, 55V, 120A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:55V; On Resistance Rds(on):5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:120A; Package / Case:D2-PAK; Power Dissipation Pd:300W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:55V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ernational Rectifier
Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package
***(Formerly Allied Electronics)
Transistor MOSFET N-ch 75V 90A D2PAK
***Yang
Trans MOSFET N-CH 75V 128A 3-Pin(2+Tab) D2PAK Tube - Rail/Tube
***SIT Distribution GmbH
Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N-CH, 75V, 120A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:230W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ineon SCT
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS
***ineon
Summary of Features: Advanced Process Technology; Ultra Low On-Resistance; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified
***ineon SCT
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
***(Formerly Allied Electronics)
AUIRFS3306 N-channel MOSFET Transistor, 120 A, 160 A, 60 V, 3-Pin D2PAK | Infineon AUIRFS3306
***SIT Distribution GmbH
Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Brushed Motor Drive; Brushless Motor Drive
***ernational Rectifier
Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package
***et
Trans MOSFET N-CH 75V 106A 3-Pin(2+Tab) D2PAK Tube
***ark
TUBE // Automotive MOSFET 75V, 75A, 7 mOhm,150nC Qg, D2Pak
***SIT Distribution GmbH
Power Field-Effect Transistor, 106A I(D), 75V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ment14 APAC
MOSFET, N CH, 75V, 106A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:106A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0059ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263AB; No. of Pins:3; SVHC:No SVHC (18-Jun-2012)
***et
Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) TO-263
*** Electronics
MOSFET, N CH, 60V, 90A, TO263
***nell
MOSFET, N CH, 60V, 90A, TO263; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; On Resistance Rds(on):4.5mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Power Dissipation Pd:272W; Voltage Vgs Max:20V
***emi
Power MOSFET, P-Channel, -60V, -100A, 5.8mΩ
***ure Electronics
P-Channel 60 V 100 A 5.8 mOhm Surface Mount Power Mosfet - TO-263
***ark
MOSFET, P-CH, -60V, -100A, TO-263; Channel Type:P Channel; Drain Source Voltage Vds:-60V; Continuous Drain Current Id:-100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:-10V; Gate Source Threshold Voltage Max:-2.6V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 100A I(D), 60V, 0.009ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, P-CH, -60V, -100A, TO-263; Transistor Polarity: P Channel; Continuous Drain Current Id: -100A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.0044ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.6V; Power Dissipation Pd: 90W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ure Electronics
SQM110N05-06L Series 55 V 110 A Automotive N-Channel Mosfet - TO-263-3
***ical
Trans MOSFET N-CH 55V 110A Automotive 3-Pin(2+Tab) TO-263
***ment14 APAC
MOSFET,N CH,W DIODE,55V,110A,TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:110A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:157W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; Operating Temperature Range:-55°C to +175°C; Voltage Vgs Max:20V
Бөлім № Mfg. Сипаттама Қор Бағасы
IRFS3307ZTRLPBF
DISTI # V72:2272_13891546		Infineon Technologies AGTrans MOSFET N-CH Si 75V 120A 3-Pin(2+Tab) D2PAK T/R800
  • 500:$1.3004
  • 250:$1.4638
  • 100:$1.4798
  • 25:$1.7737
  • 10:$1.7946
  • 1:$2.0464
IRFS3307ZTRLPBF
DISTI # IRFS3307ZTRLPBFCT-ND		Infineon Technologies AGMOSFET N-CH 75V 120A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2881In Stock
  • 100:$2.1957
  • 10:$2.7320
  • 1:$3.0300
IRFS3307ZTRLPBF
DISTI # IRFS3307ZTRLPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 75V 120A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2881In Stock
  • 100:$2.1957
  • 10:$2.7320
  • 1:$3.0300
IRFS3307ZTRLPBF
DISTI # IRFS3307ZTRLPBFTR-ND		Infineon Technologies AGMOSFET N-CH 75V 120A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		2400In Stock
  • 800:$1.4969
IRFS3307ZTRLPBF
DISTI # 31043949		Infineon Technologies AGTrans MOSFET N-CH Si 75V 120A 3-Pin(2+Tab) D2PAK T/R53600
  • 800:$1.6595
IRFS3307ZTRLPBF
DISTI # 31230377		Infineon Technologies AGTrans MOSFET N-CH Si 75V 120A 3-Pin(2+Tab) D2PAK T/R800
  • 500:$1.3004
  • 250:$1.4638
  • 100:$1.4798
  • 25:$1.7737
  • 10:$1.7946
  • 7:$2.0464
IRFS3307ZTRLPBF
DISTI # IRFS3307ZTRLPBF		Infineon Technologies AGTrans MOSFET N-CH 75V 128A 3-Pin D2PAK T/R - Tape and Reel (Alt: IRFS3307ZTRLPBF)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 800:$0.9919
  • 1600:$0.9559
  • 3200:$0.9219
  • 4800:$0.8909
  • 8000:$0.8749
IRFS3307ZTRLPBF
DISTI # 34AC1756		Infineon Technologies AGMOSFET, N-CH, 75V, 120A, TO-263AB,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:75V,On Resistance Rds(on):0.0046ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes380
  • 1:$2.5400
  • 10:$2.1600
  • 25:$2.0200
  • 50:$1.8700
  • 100:$1.7300
  • 250:$1.6200
  • 500:$1.5100
IRFS3307ZTRLPBF
DISTI # 70019743		Infineon Technologies AGMOSFET,75V,120A,5.8 MOHM,79 NC QG,D2-PAK
RoHS: Compliant		0
  • 800:$3.5000
IRFS3307ZTRLPBF
DISTI # 942-IRFS3307ZTRLPBF		Infineon Technologies AGMOSFET MOSFT 75V 120A 5.8mOhm 79nC Qg
RoHS: Compliant		5565
  • 1:$2.5400
  • 10:$2.1600
  • 100:$1.7300
  • 500:$1.5100
  • 800:$1.2500
IRFS3307ZTRLPBF
DISTI # 1300997P		Infineon Technologies AGMOSFET HEXFET N-CH 75V 128A D2PAK, RL1570
  • 50:£1.5580
  • 100:£1.2500
  • 500:£0.9720
  • 1000:£0.8600
IRFS3307ZTRLPBF
DISTI # 2781138		Infineon Technologies AGMOSFET, N-CH, 75V, 120A, TO-263AB
RoHS: Compliant		380
  • 1:$2.4300
  • 10:$2.2700
  • 100:$2.0100
  • 250:$1.9000
  • 500:$1.8000
  • 1000:$1.7100
IRFS3307ZTRLPBF
DISTI # C1S322000495003		Infineon Technologies AGMOSFETs53600
  • 2400:$0.9830
  • 1600:$1.0600
  • 800:$1.3800
IRFS3307ZTRLPBF
DISTI # 2781138		Infineon Technologies AGMOSFET, N-CH, 75V, 120A, TO-263AB
RoHS: Compliant		380
  • 1:£1.9600
  • 10:£1.5600
  • 100:£1.2500
  • 250:£1.1000
  • 500:£0.9430
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Қол жетімділік
Қор:
18
Тапсырыс бойынша:
2001
Саны енгізіңіз:
IRFS3307ZTRLPBF ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
2,53 $
2,53 $
10
2,15 $
21,50 $
100
1,72 $
172,00 $
500
1,50 $
750,00 $
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