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BSC340N08NS3GATMA1

BSC340N08NS3GATMA1
Mfr. #:
BSC340N08NS3GATMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET N-Ch 80V 23A TDSON-8 OptiMOS 3
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
BSC340N08NS3GATMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
PG-TDSON-8
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
80 V
Идентификатор - үздіксіз төгу тогы:
23 A
Rds On - ағызу көзіне қарсылық:
34 mOhms
Vgs th - Gate-Source шекті кернеуі:
2 V
Vgs - Шлюз көзі кернеуі:
10 V
Qg - қақпа заряды:
9.1 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
32 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
OptiMOS
Қаптама:
Ролик
Биіктігі:
1.27 mm
Ұзындығы:
5.9 mm
Серия:
OptiMOS 3
Транзистор түрі:
1 N-Channel
Ені:
5.15 mm
Бренд:
Infineon Technologies
Форвард өткізгіштік - Мин:
8 S
Күз уақыты:
2 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
3 ns
Зауыттық буманың саны:
5000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
11 ns
Қосудың әдеттегі кешігу уақыты:
8 ns
Бөлім # Бүркеншік аттар:
BSC340N08NS3 BSC34N8NS3GXT G SP000447534
Бірлік салмағы:
0.007055 oz
Tags
BSC340N08NS3, BSC340N, BSC34, BSC3, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CH, 80V, 23A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain
*** Source Electronics
Trans MOSFET N-CH 80V 7A Automotive 8-Pin TDSON EP T/R / MOSFET N-CH 80V 23A TDSON-8
***ure Electronics
N-Channel 80 V 34 mOhm OptiMOS™3 Power-Transistor - PG-TDSON-8
***nell
MOSFET, N-CH, 80V, 23A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0275ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:32W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SuperSOT; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
***ineon
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control
***ure Electronics
Single N-Channel 80 V 29 mOhm 38 nC HEXFET® Power Mosfet - SOIC-8
***et
Trans MOSFET N-CH 80V 6.3A 8-Pin SOIC T/R
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:80V; Continuous Drain Current, Id:6.3A; On Resistance, Rds(on):29mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes RoHS Compliant: Yes
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 80V;RDS(ON) 24 Milliohms;ID 6.3A;SO-8;PD 2.5W;VGS +/-20V
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.3A; Drain Source Voltage Vds:80V; On Resistance Rds(on):29mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.3A; External Length / Height:1.75mm; External Width:4.05mm; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; Row Pitch:6.3mm; SMD Marking:F7488; Termination Type:SMD; Voltage Vds Typ:80V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ser
MOSFETs 6a, 80V N-Ch MOSFET
***emi
N-Channel PowerTrench® MOSFET, 80V, 6.5A, 39mΩ
***Yang
Trans MOSFET N-CH 80V 6.5A 8-Pin SOIC N T/R - Tape and Reel
***ment14 APAC
N CHANNEL MOSFET, 80V, 6.5A, SOIC, FULL REEL; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Source Voltage Vds:80V; On
***nell
MOSFET, N-CH, 80V, 6.5A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.032ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
***(Formerly Allied Electronics)
MOSFET; Power; N-Ch; VDSS 60V; RDS(ON) 0.025Ohm; ID 25A; TO-252; PD 50W; VGS +/-20V; -55
***ure Electronics
Single N-Channel 60 V 0.031 Ohms Surface Mount Power Mosfet - TO-252
***nell
MOSFET, N-CH, 60V, 21.4A, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 21.4A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 31.25W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
***roFlash
Power Field-Effect Transistor, 9.1A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ure Electronics
Single N-Channel 60 V 26 mOhm 21 nC HEXFET® Power Mosfet - SOIC-8
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.2A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipa
Бөлім № Mfg. Сипаттама Қор Бағасы
BSC340N08NS3GATMA1
DISTI # V72:2272_06390955		Infineon Technologies AGTrans MOSFET N-CH 80V 7A 8-Pin TDSON EP T/R
RoHS: Compliant		4900
  • 3000:$0.2249
  • 1000:$0.2526
  • 500:$0.3046
  • 250:$0.3079
  • 100:$0.3111
  • 25:$0.4366
  • 10:$0.4421
  • 1:$0.5109
BSC340N08NS3GATMA1
DISTI # BSC340N08NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 80V 23A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.2692
BSC340N08NS3GATMA1
DISTI # BSC340N08NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 80V 23A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.3287
  • 500:$0.4108
  • 100:$0.5546
  • 10:$0.7190
  • 1:$0.8200
BSC340N08NS3GATMA1
DISTI # BSC340N08NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 80V 23A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.3287
  • 500:$0.4108
  • 100:$0.5546
  • 10:$0.7190
  • 1:$0.8200
BSC340N08NS3GATMA1
DISTI # 31314390		Infineon Technologies AGTrans MOSFET N-CH 80V 7A 8-Pin TDSON EP T/R
RoHS: Compliant		4900
  • 32:$0.5109
BSC340N08NS3GATMA1
DISTI # BSC340N08NS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 80V 7A 8-Pin TDSON EP - Tape and Reel (Alt: BSC340N08NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.2079
  • 10000:$0.2009
  • 20000:$0.1939
  • 30000:$0.1869
  • 50000:$0.1839
BSC340N08NS3GATMA1/SAMPLE
DISTI # BSC340N08NS3GATMA1/SAMPLE		Infineon Technologies AGTrans MOSFET N-CH 80V 23A 8-Pin TDSON T/R - Bulk (Alt: BSC340N08NS3GATMA1/SAMPLE)
RoHS: Compliant
Container: Bulk		Americas - 0
    BSC340N08NS3GATMA1
    DISTI # 47W3313    		Infineon Technologies AGMOSFET, N CHANNEL, 80V, 23A, 8TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:23A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0275ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes2000
    • 1:$0.6800
    • 10:$0.5620
    • 100:$0.3630
    • 500:$0.3270
    • 1000:$0.2910
    BSC340N08NS3 G
    DISTI # 726-BSC340N08NS3G    		Infineon Technologies AGMOSFET N-Ch 80V 23A TDSON-8 OptiMOS 3
    RoHS: Compliant    		37972
    • 1:$0.6800
    • 10:$0.5620
    • 100:$0.3630
    • 1000:$0.2910
    BSC340N08NS3GATMA1
    DISTI # 726-BSC340N08NS3GATM    		Infineon Technologies AGMOSFET N-Ch 80V 23A TDSON-8 OptiMOS 3
    RoHS: Compliant    		7422
    • 1:$0.6800
    • 10:$0.5620
    • 100:$0.3630
    • 1000:$0.2910
    BSC340N08NS3GATMA1
    DISTI # 7545320    		Infineon Technologies AGMOSFET N-CHANNEL 80V 7A OPTIMOS3 TDSON8, PK1415
    • 5:£0.4800
    • 50:£0.3720
    • 250:£0.2420
    • 1250:£0.1920
    • 2500:£0.1880
    BSC340N08NS3GATMA1
    DISTI # 2212853    		Infineon Technologies AGMOSFET, N-CH, 80V, 23A, 8TDSON
    RoHS: Compliant    		2000
    • 1:$1.0800
    • 10:$0.8900
    • 100:$0.5750
    • 1000:$0.4610
    • 5000:$0.3880
    BSC340N08NS3GATMA1
    DISTI # 2212853    		Infineon Technologies AGMOSFET, N-CH, 80V, 23A, 8TDSON
    RoHS: Compliant    		2000
    • 5:£0.4900
    • 25:£0.3790
    • 100:£0.2830
    • 250:£0.2470
    • 500:£0.2200
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    Қол жетімділік
    Қор:
    Available
    Тапсырыс бойынша:
    1990
    Саны енгізіңіз:
    BSC340N08NS3GATMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
    Анықтамалық баға (USD)
    Саны
    Тауар өлшемінің бағасы
    Қосымша. Бағасы
    1
    0,67 $
    0,67 $
    10
    0,56 $
    5,62 $
    100
    0,36 $
    36,30 $
    1000
    0,29 $
    291,00 $
    2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
    -ден бастаңыз
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