OMO ElectronicOMO Electronic
Expand menu
0 Арба

IXFN82N60Q3

IXFN82N60Q3
Mfr. #:
IXFN82N60Q3
Өндіруші:
Littelfuse
Сипаттама:
MOSFET Q3Class HiPerFET Pwr MOSFET 600V/66A
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IXFN82N60Q3 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN82N60Q3 DatasheetIXFN82N60Q3 Datasheet (P4-P5)
ECAD Model:
Көбірек ақпарат:
IXFN82N60Q3 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
IXYS
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
Шасси бекіткіші
Пакет/қорап:
SOT-227-4
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
600 V
Идентификатор - үздіксіз төгу тогы:
66 A
Rds On - ағызу көзіне қарсылық:
75 mOhms
Vgs - Шлюз көзі кернеуі:
30 V
Qg - қақпа заряды:
275 nC
Pd - қуаттың шығыны:
960 W
Конфигурация:
Бойдақ
Сауда атауы:
HiPerFET
Қаптама:
Түтік
Серия:
IXFN82N60
Транзистор түрі:
1 N-Channel
Бренд:
IXYS
Өнім түрі:
MOSFET
Көтеру уақыты:
300 ns
Зауыттық буманың саны:
10
Ішкі санат:
MOSFETs
Бірлік салмағы:
1.058219 oz
Tags
IXFN8, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Бөлім № Mfg. Сипаттама Қор Бағасы
IXFN82N60Q3
DISTI # V36:1790_15877469		IXYS CorporationTrans MOSFET N-CH 600V 66A 4-Pin SOT-227B
RoHS: Compliant		0
    IXFN82N60Q3
    DISTI # IXFN82N60Q3-ND    		IXYS CorporationMOSFET N-CH 600V 66A SOT-227
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		24In Stock
    • 100:$34.9950
    • 30:$37.3280
    • 10:$40.3610
    • 1:$43.1600
    IXFN82N60Q3
    DISTI # 747-IXFN82N60Q3    		IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 600V/66A
    RoHS: Compliant    		0
    • 1:$43.1600
    • 5:$41.6500
    • 10:$40.3700
    • 25:$37.3300
    • 50:$36.2300
    • 100:$35.0000
    • 200:$32.6700
    Сурет Бөлім № Сипаттама
    IXFN80N60P3

    Mfr.#: IXFN80N60P3

    OMO.#: OMO-IXFN80N60P3

    		 MOSFET Polar3 HiPerFET Power MOSFET
    IXFN80N50Q3

    Mfr.#: IXFN80N50Q3

    OMO.#: OMO-IXFN80N50Q3

    		 MOSFET Q3Class HiPerFET Pwr MOSFET 500V/63A
    IXFN80N50

    Mfr.#: IXFN80N50

    OMO.#: OMO-IXFN80N50

    		 MOSFET 500V 80A
    IXFN80N50Q2

    Mfr.#: IXFN80N50Q2

    OMO.#: OMO-IXFN80N50Q2

    		 MOSFET 80 Amps 500V 0.06 Rds
    IXFN80N50

    Mfr.#: IXFN80N50

    OMO.#: OMO-IXFN80N50-IXYS-CORPORATION

    		 MOSFET N-CH 500V 80A SOT-227B
    IXFN80N50P

    Mfr.#: IXFN80N50P

    OMO.#: OMO-IXFN80N50P-IXYS-CORPORATION

    		 MOSFET N-CH 500V 66A SOT-227
    IXFN80N48

    Mfr.#: IXFN80N48

    OMO.#: OMO-IXFN80N48-IXYS-CORPORATION

    		 MOSFET N-CH 480V 80A SOT-227B
    IXFN80N50Q2

    Mfr.#: IXFN80N50Q2

    OMO.#: OMO-IXFN80N50Q2-IXYS-CORPORATION

    		 MOSFET 80 Amps 500V 0.06 Rds
    IXFN82N60P

    Mfr.#: IXFN82N60P

    OMO.#: OMO-IXFN82N60P-IXYS-CORPORATION

    		 IGBT Transistors MOSFET DIODE Id82 BVdass600
    IXFN80N60P3

    Mfr.#: IXFN80N60P3

    OMO.#: OMO-IXFN80N60P3-IXYS-CORPORATION

    		 MOSFET N-CH 600V 66A SOT-227B
    Қол жетімділік
    Қор:
    Available
    Тапсырыс бойынша:
    3500
    Саны енгізіңіз:
    IXFN82N60Q3 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
    Анықтамалық баға (USD)
    Саны
    Тауар өлшемінің бағасы
    Қосымша. Бағасы
    1
    43,16 $
    43,16 $
    5
    41,65 $
    208,25 $
    10
    40,37 $
    403,70 $
    25
    37,33 $
    933,25 $
    50
    36,23 $
    1 811,50 $
    100
    35,00 $
    3 500,00 $
    200
    32,67 $
    6 534,00 $
    -ден бастаңыз
    Ең жаңа өнімдер
    More Newest Products
    Top