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IXTH30N50P

IXTH30N50P
Mfr. #:
IXTH30N50P
Өндіруші:
Littelfuse
Сипаттама:
MOSFET 30.0 Amps 500 V 0.2 Ohm Rds
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IXTH30N50P Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTH30N50P DatasheetIXTH30N50P Datasheet (P4-P5)
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
IXYS
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
Тесік арқылы
Пакет/қорап:
TO-247-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
500 V
Идентификатор - үздіксіз төгу тогы:
30 A
Rds On - ағызу көзіне қарсылық:
165 mOhms
Vgs th - Gate-Source шекті кернеуі:
5 V
Vgs - Шлюз көзі кернеуі:
30 V
Qg - қақпа заряды:
70 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
460 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
PolarHV
Қаптама:
Түтік
Биіктігі:
21.46 mm
Ұзындығы:
16.26 mm
Серия:
IXTH30N50
Транзистор түрі:
1 N-Channel
Түрі:
PolarHV Power MOSFET
Ені:
5.3 mm
Бренд:
IXYS
Форвард өткізгіштік - Мин:
17 S
Күз уақыты:
21 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
27 ns
Зауыттық буманың саны:
30
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
75 ns
Қосудың әдеттегі кешігу уақыты:
25 ns
Бірлік салмағы:
0.229281 oz
Tags
IXTH30N5, IXTH30N, IXTH30, IXTH3, IXTH, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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SUPERFET2 650V, 150 MOHM, FRFET; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.133ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Powe
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
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SUPERFET2 104MOHM, FRFET; Transistor Polarity: N Channel; Continuous Drain Current Id: 37A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.098ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissi
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
Бөлім № Mfg. Сипаттама Қор Бағасы
IXTH30N50P
DISTI # IXTH30N50P-ND		IXYS CorporationMOSFET N-CH 500V 30A TO-247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$5.6377
IXTH30N50P
DISTI # 747-IXTH30N50P		IXYS CorporationMOSFET 30.0 Amps 500 V 0.2 Ohm Rds
RoHS: Compliant		0
  • 1:$8.0400
  • 10:$7.1900
  • 25:$6.2500
  • 50:$6.1300
  • 100:$5.8900
  • 250:$5.0300
  • 500:$4.7700
  • 1000:$4.0300
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Қол жетімділік
Қор:
100
Тапсырыс бойынша:
2083
Саны енгізіңіз:
IXTH30N50P ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
8,04 $
8,04 $
10
7,19 $
71,90 $
25
6,25 $
156,25 $
50
6,13 $
306,50 $
100
5,89 $
589,00 $
250
5,03 $
1 257,50 $
500
4,77 $
2 385,00 $
1000
4,03 $
4 030,00 $
2500
3,45 $
8 625,00 $
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