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SI4126DY-T1-GE3

SI4126DY-T1-GE3
Mfr. #:
SI4126DY-T1-GE3
Өндіруші:
Vishay / Siliconix
Сипаттама:
MOSFET 30V Vds 20V Vgs SO-8
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
SI4126DY-T1-GE3 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4126DY-T1-GE3 DatasheetSI4126DY-T1-GE3 Datasheet (P4-P6)SI4126DY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Көбірек ақпарат:
SI4126DY-T1-GE3 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Вишай
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
SO-8
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
30 V
Идентификатор - үздіксіз төгу тогы:
39 A
Rds On - ағызу көзіне қарсылық:
2.75 mOhms
Vgs th - Gate-Source шекті кернеуі:
1 V
Vgs - Шлюз көзі кернеуі:
10 V
Qg - қақпа заряды:
70 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
7.8 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
TrenchFET
Қаптама:
Ролик
Серия:
SI4
Транзистор түрі:
1 N-Channel
Бренд:
Вишай / Силиконикс
Форвард өткізгіштік - Мин:
75 S
Күз уақыты:
10 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
10 ns
Зауыттық буманың саны:
2500
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
43 ns
Қосудың әдеттегі кешігу уақыты:
15 ns
Бөлім # Бүркеншік аттар:
SI4126DY-GE3
Бірлік салмағы:
0.006596 oz
Tags
SI4126DY-T, SI4126D, SI4126, SI412, SI41, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 0.00275 Ohm Surface Mount Power Mosfet - SOIC-8
***et
Trans MOSFET N-CH 30V 26.5A 8-Pin SOIC N T/R
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:39000mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0034ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:3.5W ;RoHS Compliant: Yes
TrenchFET® Gen III Power MOSFET
The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Бөлім № Mfg. Сипаттама Қор Бағасы
SI4126DY-T1-GE3
DISTI # V72:2272_09215532		Vishay IntertechnologiesTrans MOSFET N-CH 30V 26.5A 8-Pin SOIC N T/R0
    SI4126DY-T1-GE3
    DISTI # V36:1790_09215532    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 26.5A 8-Pin SOIC N T/R0
    • 2500000:$1.3090
    • 1250000:$1.3100
    • 250000:$1.3320
    • 25000:$1.3570
    • 2500:$1.3610
    SI4126DY-T1-GE3
    DISTI # SI4126DY-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CH 30V 39A 8-SOIC
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		On Order
    • 5000:$1.0920
    • 2500:$1.1340
    SI4126DY-T1-GE3
    DISTI # SI4126DY-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CH 30V 39A 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Temporarily Out of Stock
    • 1000:$1.2545
    • 500:$1.5141
    • 100:$1.8429
    • 10:$2.2930
    • 1:$2.5500
    SI4126DY-T1-GE3
    DISTI # SI4126DY-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CH 30V 39A 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Temporarily Out of Stock
    • 1000:$1.2545
    • 500:$1.5141
    • 100:$1.8429
    • 10:$2.2930
    • 1:$2.5500
    SI4126DY-T1-GE3
    DISTI # SI4126DY-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 26.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4126DY-T1-GE3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
      SI4126DY-T1-GE3
      DISTI # SI4126DY-T1-GE3      		Vishay IntertechnologiesTrans MOSFET N-CH 30V 26.5A 8-Pin SOIC N T/R (Alt: SI4126DY-T1-GE3)
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape and Reel      		Europe - 0
      • 25000:€0.5919
      • 15000:€0.6179
      • 10000:€0.6999
      • 5000:€0.8629
      • 2500:€1.2029
      SI4126DY-T1-GE3
      DISTI # SI4126DY-T1-GE3      		Vishay IntertechnologiesTrans MOSFET N-CH 30V 26.5A 8-Pin SOIC N T/R (Alt: SI4126DY-T1-GE3)
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape and Reel      		Asia - 0
        SI4126DY-T1-GE3
        DISTI # 16P3727        		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 39A, SOIC, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:39A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0022ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V RoHS Compliant: Yes0
        • 1:$1.4100
        • 2500:$1.4100
        SI4126DY-T1-GE3
        DISTI # 18X0010        		Vishay IntertechnologiesMOSFET, N CHANNEL, 30V, 39A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:39A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0022ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes0
        • 500:$1.4900
        • 250:$1.7300
        • 100:$1.9900
        • 50:$2.2300
        • 25:$2.4700
        • 10:$2.6700
        • 1:$2.8000
        SI4126DY-T1-GE3
        DISTI # 781-SI4126DY-T1-GE3        		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8
        RoHS: Compliant        		0
        • 1:$2.4800
        • 10:$2.0600
        • 100:$1.6000
        • 500:$1.4000
        • 1000:$1.1500
        • 2500:$1.0800
        • 5000:$1.0400
        SI4126DY-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8Americas - Stock
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          Қол жетімділік
          Қор:
          Available
          Тапсырыс бойынша:
          1984
          Саны енгізіңіз:
          SI4126DY-T1-GE3 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
          Анықтамалық баға (USD)
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          Қосымша. Бағасы
          1
          2,48 $
          2,48 $
          10
          2,06 $
          20,60 $
          100
          1,60 $
          160,00 $
          500
          1,40 $
          700,00 $
          1000
          1,15 $
          1 150,00 $
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