APTCV50H60T3G

APTCV50H60T3G
Mfr. #:
APTCV50H60T3G
Өндіруші:
Microchip / Microsemi
Сипаттама:
IGBT Modules DOR CC3133
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
APTCV50H60T3G Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APTCV50H60T3G DatasheetAPTCV50H60T3G Datasheet (P4-P6)APTCV50H60T3G Datasheet (P7-P9)APTCV50H60T3G Datasheet (P10-P11)
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Микрочип
Өнім санаты:
IGBT модульдері
RoHS:
Y
Өнім:
IGBT кремний модульдері
Конфигурация:
Толық көпір
Коллектор-эмиттер кернеуі VCEO Max:
600 V
Коллектор-эмиттер қанығу кернеуі:
1.5 V
Үздіксіз коллектор тогы 25 С:
80 A
Шлюз-эмиттер ағып кету тогы:
600 nA
Pd - қуаттың шығыны:
176 W
Пакет/қорап:
SP3-32
Ең төменгі жұмыс температурасы:
- 40 C
Максималды жұмыс температурасы:
+ 100 C
Қаптама:
Түтік
Бренд:
Микрочип / Microsemi
Орнату стилі:
Шасси бекіткіші
Шықпа эмитентінің максималды кернеуі:
20 V
Өнім түрі:
IGBT модульдері
Зауыттық буманың саны:
1
Ішкі санат:
IGBT
Tags
APTCV, APTC, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel
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FULL - BRIDGE NPT AND TRENCH + FIELD STOP IGBT POWER MODULE
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PM-MOSFET-COOLMOS-SP3 SP3F Tube RoHS Compliant: Yes
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Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel
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PM-IGBT-TFS-SP3F SP3F Tube RoHS Compliant: Yes
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Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel
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Trans IGBT Module N-CH 600V 80A 10-Pin Case SP-1
***rochip SCT
High Voltage Power Module, Asymmetrical bridge, 600V, RoHS
***ark
PM-IGBT-TFS-SP1 SP1 Tube RoHS Compliant: Yes
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Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel
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Trans IGBT Module N-CH 600V 80A 12-Pin Case SP1
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High Voltage Power Module, Three level inverter, 600V, RoHS
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PM-IGBT-TFS-SP1 SP1 Tube RoHS Compliant: Yes
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POWER MODULE IGBT 600V 50A SP1
***et Europe
EasyPACK 1B 600V sixpack IGBT module with Trench/Fieldstop IGBT3
***ment14 APAC
IGBT, LOW POWER, 600V, 50A, EASYPACK; Module Configuration:Six; Transistor Polarity:N Channel; DC Collector Current:50A; Collector Emitter Voltage Vces:1.45V; Power Dissipation Pd:205W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:18; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:205W
***ineon
EasyPACK 1B 600V sixpack IGBT module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and NTC. | Summary of Features: Low Switching Losses; Trench IGBT 3; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Restistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; solar; ups; majorhomeapplicances
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Trans IGBT Module N-CH 600V 100A 7-Pin EPM Rail
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IGBT MODULE 600V 100A 400W EPM7
***DA Technology Co., Ltd.
Product Description Demo for Development.
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Igbt Array & Module Transistor, N Channel, 75 A, 2.8 V, 310 W, 600 V, 7Pm-Ga
***Yang
IGBT Module Half Bridge 600V 75A 310W Chassis Mount 7PM-GA - Bulk
***inecomponents.com
600V, 75A IGBT Module (Molding Type)
*** Electronic Components
Motor / Motion / Ignition Controllers & Drivers 600V/75A
***el Electronic
IGBT MODULE 600V 75A 310W 7PMGA
***DA Technology Co., Ltd.
Product Description Demo for Development.
***nell
IGBT MODULE, 600V, 75A; Transistor Type:IGBT Module; Transistor Polarity:NPN; Voltage, Vces:600V; Current Ic Continuous a Max:75A; Voltage, Vce Sat Max:2.8V; Power Dissipation:310W; Case Style:7PM-GA; Termination Type:Screw; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:150A; External Depth:93mm; Fixing Centres:80mm; Fixing Hole Diameter:5.4mm; Pin Configuration:C2E1, E2, C1, G2, E2, E1, G1; Power, Pd:310W; Time, Rise:40ns; Transistors, No. of:2
Сурет Бөлім № Сипаттама
APTCV50H60T3G

Mfr.#: APTCV50H60T3G

OMO.#: OMO-APTCV50H60T3G

IGBT Modules DOR CC3133
Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
5500
Саны енгізіңіз:
APTCV50H60T3G ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
100
71,73 $
7 173,00 $
-ден бастаңыз
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