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SIZ710DT-T1-GE3

SIZ710DT-T1-GE3
Mfr. #:
SIZ710DT-T1-GE3
Өндіруші:
Vishay / Siliconix
Сипаттама:
MOSFET 20V Vds 20V Vgs PowerPAIR 6 x 3.7
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
SIZ710DT-T1-GE3 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIZ710DT-T1-GE3 DatasheetSIZ710DT-T1-GE3 Datasheet (P4-P6)SIZ710DT-T1-GE3 Datasheet (P7-P9)SIZ710DT-T1-GE3 Datasheet (P10-P12)SIZ710DT-T1-GE3 Datasheet (P13-P14)
ECAD Model:
Көбірек ақпарат:
SIZ710DT-T1-GE3 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Вишай
Өнім санаты:
MOSFET
RoHS:
E
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
PowerPAIR-6x3.7-8
Арналар саны:
2 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
20 V
Идентификатор - үздіксіз төгу тогы:
16 A, 35 A
Rds On - ағызу көзіне қарсылық:
6.8 mOhms, 3.3 mOhms
Vgs th - Gate-Source шекті кернеуі:
1 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
18 nC, 60 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
27 W, 48 W
Конфигурация:
Қосарлы
Арна режимі:
Жақсарту
Сауда атауы:
TrenchFET
Қаптама:
Ролик
Серия:
SIZ
Транзистор түрі:
2 N-Channel
Бренд:
Вишай / Силиконикс
Форвард өткізгіштік - Мин:
45 S, 85 S
Күз уақыты:
12 ns, 12 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
15 ns, 15 ns
Зауыттық буманың саны:
3000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
20 ns, 30 ns
Қосудың әдеттегі кешігу уақыты:
15 ns, 25 ns
Бөлім # Бүркеншік аттар:
SIZ710DT-GE3
Tags
SIZ710DT-T, SIZ71, SIZ7, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N-Channel 20 V 0.0068 Ohm Surface Mount Power MosFet - PowerPAIR 6 x 3.7 mm
***et Europe
Transistor MOSFET Array Dual N-CH 20V 16A/35A 6-Pin PowerPAIR T/R
***ark
MOSFET, DUAL N-CH, 20V, 16A/35A, POWERPAIR; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:35A; Drain Source Voltage Vds, N Channel:20V; On Resistance Rds(on), N Channel:0.0068ohm; Rds(on) Test Voltage Vgs:10V
***ment14 APAC
MOSFET,NN CH,HALF BR,DIO,20V,PPAIR6; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:4.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAIR; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:30A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):5500µohm; Power Dissipation Pd:4.6W
Dual N-Channel TrenchFET® Power MOSFETs
Vishay Siliconix Dual N-Channl TrenchFET® Power MOSFETs offers co-packaged MOSFETs to reduce space and increase performance over two discretes. These Dual N-Channel TrenchFET® Power MOSFETs combines two MOSFETs into a compact package. By combining the devices into one package the Vishay Siliconix Dual N-Channel TrenchFET® Power MOSFETs simplify layout, reduces parasitic inductance from PCB traces, increases efficiency and reduces ringing. Typical applications include system power, POL, and synchronous buck converters in notebooks.Learn More
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
PowerPAIR® Dual-MOSFETs
Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. 
Бөлім № Mfg. Сипаттама Қор Бағасы
SIZ710DT-T1-GE3
DISTI # V72:2272_09216120		Vishay IntertechnologiesTrans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R
RoHS: Compliant		2000
  • 1000:$0.6544
  • 500:$0.7412
  • 250:$0.8087
  • 100:$0.8367
  • 25:$0.9213
  • 10:$1.0236
  • 1:$1.1931
SIZ710DT-T1-GE3
DISTI # SIZ710DT-T1-GE3CT-ND		Vishay SiliconixMOSFET 2N-CH 20V 16A POWERPAIR
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6In Stock
  • 1000:$0.7308
  • 500:$0.9257
  • 100:$1.1936
  • 10:$1.5100
  • 1:$1.7100
SIZ710DT-T1-GE3
DISTI # SIZ710DT-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2N-CH 20V 16A POWERPAIR
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6In Stock
  • 1000:$0.7308
  • 500:$0.9257
  • 100:$1.1936
  • 10:$1.5100
  • 1:$1.7100
SIZ710DT-T1-GE3
DISTI # SIZ710DT-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 20V 16A POWERPAIR
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.6622
SIZ710DT-T1-GE3
DISTI # 30150542		Vishay IntertechnologiesTrans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R
RoHS: Compliant		2000
  • 1000:$0.6544
  • 500:$0.7412
  • 250:$0.8087
  • 100:$0.8367
  • 25:$0.9213
  • 12:$1.0236
SIZ710DT-T1-GE3
DISTI # SIZ710DT-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R (Alt: SIZ710DT-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
  • 3000:$0.6596
  • 6000:$0.5074
  • 9000:$0.4039
  • 15000:$0.3412
  • 30000:$0.3141
  • 75000:$0.3044
  • 150000:$0.2954
SIZ710DT-T1-GE3
DISTI # SIZ710DT-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R (Alt: SIZ710DT-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€1.2499
  • 6000:€0.8959
  • 12000:€0.7269
  • 18000:€0.6429
  • 30000:€0.6149
SIZ710DT-T1-GE3
DISTI # SIZ710DT-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ710DT-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.6249
  • 6000:$0.6069
  • 12000:$0.5819
  • 18000:$0.5659
  • 30000:$0.5509
SIZ710DT-T1-GE3
DISTI # 83T3536		Vishay IntertechnologiesMOSFET, DUAL N CHANNEL, 20V, 16A/35A, POWERPAIR,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:20V,On Resistance Rds(on):5500µohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins , RoHS Compliant: Yes0
  • 1:$1.5100
  • 25:$1.2400
  • 50:$1.1000
  • 100:$0.9510
  • 250:$0.8850
  • 500:$0.8180
  • 1000:$0.7190
SIZ710DT-T1-GE3
DISTI # 65T1676		Vishay IntertechnologiesMOSFET, DUAL N-CH, 20V, 16A/35A, POWERPAIR,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:20V,On Resistance Rds(on):5500µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V , RoHS Compliant: Yes0
  • 1:$0.6370
  • 3000:$0.6330
  • 6000:$0.6020
  • 12000:$0.5340
SIZ710DT-T1-GE3
DISTI # 781-SIZ710DT-T1-GE3		Vishay IntertechnologiesMOSFET 20V Vds 20V Vgs PowerPAIR 6 x 3.7
RoHS: Compliant		378
  • 1:$1.5100
  • 10:$1.2400
  • 100:$0.9510
  • 500:$0.8180
  • 1000:$0.7190
  • 3000:$0.7170
SIZ710DT-T1-GE3
DISTI # C1S803601344629		Vishay IntertechnologiesMOSFETs2000
  • 250:$0.8087
  • 100:$0.8367
  • 25:$0.9213
  • 10:$1.0236
SIZ710DT-T1-GE3Vishay IntertechnologiesMOSFET 20V Vds 20V Vgs PowerPAIR 6 x 3.7Americas -
    SIZ710DT-T1-GE3
    DISTI # 2129099    		Vishay IntertechnologiesMOSFET, DUAL N-CH, 20V, 16A/35A, POWERPA
    RoHS: Compliant    		0
    • 3000:£0.6370
    Сурет Бөлім № Сипаттама
    S1G-13-F

    Mfr.#: S1G-13-F

    OMO.#: OMO-S1G-13-F

    		 Rectifiers 400V 1A
    S1G-13-F

    Mfr.#: S1G-13-F

    OMO.#: OMO-S1G-13-F-DIODES

    		 DIODE GEN PURP 400V 1A SMA
    Қол жетімділік
    Қор:
    Available
    Тапсырыс бойынша:
    5000
    Саны енгізіңіз:
    SIZ710DT-T1-GE3 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
    Анықтамалық баға (USD)
    Саны
    Тауар өлшемінің бағасы
    Қосымша. Бағасы
    1
    1,50 $
    1,50 $
    10
    1,23 $
    12,30 $
    100
    0,95 $
    95,00 $
    500
    0,82 $
    408,50 $
    1000
    0,64 $
    644,00 $
    2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
    -ден бастаңыз
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