IPD65R650CEAUMA1

IPD65R650CEAUMA1
Mfr. #:
IPD65R650CEAUMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET CONSUMER
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IPD65R650CEAUMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
PG-TO-252-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
650 V
Идентификатор - үздіксіз төгу тогы:
10.1 A
Rds On - ағызу көзіне қарсылық:
650 mOhms
Vgs th - Gate-Source шекті кернеуі:
2.5 V
Vgs - Шлюз көзі кернеуі:
10 V
Qg - қақпа заряды:
23 nC
Ең төменгі жұмыс температурасы:
- 40 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
86 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
CoolMOS
Қаптама:
Ролик
Биіктігі:
2.3 mm
Ұзындығы:
6.5 mm
Серия:
CoolMOS CE
Транзистор түрі:
1 N-Channel
Ені:
6.22 mm
Бренд:
Infineon Technologies
Күз уақыты:
11 ns
Ылғалға сезімтал:
Иә
Өнім түрі:
MOSFET
Көтеру уақыты:
8 ns
Зауыттық буманың саны:
2500
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
64 ns
Қосудың әдеттегі кешігу уақыты:
10 ns
Бөлім # Бүркеншік аттар:
IPD65R650CE SP001396908
Бірлік салмағы:
0.011993 oz
Tags
IPD65R65, IPD65R6, IPD65R, IPD65, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
Single N-Channel 650V 650 mOhm 23 nC CoolMOS Power Mosfet - TO-252-3, PG-TO252-3, RoHS
***ark
Mosfet, N-Ch, 650V, 10.1A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:10.1A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.54Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
CoolMOS CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. | Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
Бөлім № Mfg. Сипаттама Қор Бағасы
IPD65R650CEAUMA1
DISTI # V72:2272_13979491
Infineon Technologies AGTrans MOSFET N-CH 650V 10.1A 3-Pin(2+Tab) DPAK T/R2500
  • 1:$0.3626
IPD65R650CEAUMA1
DISTI # V36:1790_13979491
Infineon Technologies AGTrans MOSFET N-CH 650V 10.1A 3-Pin(2+Tab) DPAK T/R0
  • 2500000:$0.3011
  • 1250000:$0.3013
  • 250000:$0.3264
  • 25000:$0.3708
  • 2500:$0.3782
IPD65R650CEAUMA1
DISTI # IPD65R650CEAUMA1TR-ND
Infineon Technologies AGMOSFET N-CH 650V 7A TO-252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
2500In Stock
  • 25000:$0.3304
  • 12500:$0.3391
  • 5000:$0.3521
  • 2500:$0.3782
IPD65R650CEAUMA1
DISTI # IPD65R650CEAUMA1CT-ND
Infineon Technologies AGMOSFET N-CH 650V 7A TO-252
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2500In Stock
  • 1000:$0.4030
  • 500:$0.5104
  • 100:$0.6179
  • 10:$0.7920
  • 1:$0.8900
IPD65R650CEAUMA1
DISTI # IPD65R650CEAUMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 650V 7A TO-252
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2500In Stock
  • 1000:$0.4030
  • 500:$0.5104
  • 100:$0.6179
  • 10:$0.7920
  • 1:$0.8900
IPD65R650CEAUMA1
DISTI # 33962603
Infineon Technologies AGTrans MOSFET N-CH 650V 10.1A 3-Pin(2+Tab) DPAK T/R2500
  • 21:$0.3403
IPD65R650CEAUMA1
DISTI # SP001396908
Infineon Technologies AG650VCoolMOSCEPowerTransistor (Alt: SP001396908)
RoHS: Compliant
Min Qty: 2500
Europe - 7500
  • 25000:€0.2949
  • 15000:€0.3179
  • 10000:€0.3439
  • 5000:€0.3759
  • 2500:€0.4589
IPD65R650CEAUMA1
DISTI # IPD65R650CEAUMA1
Infineon Technologies AG650VCoolMOSCEPowerTransistor - Tape and Reel (Alt: IPD65R650CEAUMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 25000:$0.3149
  • 15000:$0.3209
  • 10000:$0.3319
  • 5000:$0.3449
  • 2500:$0.3569
IPD65R650CEAUMA1
DISTI # 34AC1687
Infineon Technologies AGMOSFET, N-CH, 650V, 10.1A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:10.1A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.54ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes0
  • 1000:$0.4020
  • 500:$0.4350
  • 250:$0.4690
  • 100:$0.5020
  • 50:$0.5940
  • 25:$0.6860
  • 10:$0.7780
  • 1:$0.9290
IPD65R650CEAUMA1
DISTI # 726-IPD65R650CEAUMA1
Infineon Technologies AGMOSFET CONSUMER
RoHS: Compliant
2450
  • 1:$0.9200
  • 10:$0.7700
  • 100:$0.4970
  • 1000:$0.3980
IPD65R650CEAUMA1
DISTI # 2781176
Infineon Technologies AGMOSFET, N-CH, 650V, 10.1A, TO-2522496
  • 500:£0.3320
  • 250:£0.3580
  • 100:£0.3830
  • 10:£0.6460
  • 1:£0.8100
IPD65R650CEAUMA1
DISTI # 2781176
Infineon Technologies AGMOSFET, N-CH, 650V, 10.1A, TO-252
RoHS: Compliant
0
  • 100:$0.7650
  • 25:$0.9360
  • 5:$1.0800
Сурет Бөлім № Сипаттама
ICL3221EIAZ

Mfr.#: ICL3221EIAZ

OMO.#: OMO-ICL3221EIAZ

RS-232 Interface IC RS232 3V 1D/1R 15KV AUTODWN 16SSOP IND
IFN5911

Mfr.#: IFN5911

OMO.#: OMO-IFN5911

JFET Dual N-Ch JFET -25V 50mA 500mW 4mW
DMG2305UXQ-7

Mfr.#: DMG2305UXQ-7

OMO.#: OMO-DMG2305UXQ-7

MOSFET MOSFET BVDSS
750341634

Mfr.#: 750341634

OMO.#: OMO-750341634

Common Mode Chokes / Filters MID-DC16US 10mH 10kHz .51 Ohms max
CLF12577NIT-101M-D

Mfr.#: CLF12577NIT-101M-D

OMO.#: OMO-CLF12577NIT-101M-D

Fixed Inductors 100uH +/-20% AECQ200 -55 to +150C
EP3WS10RJ

Mfr.#: EP3WS10RJ

OMO.#: OMO-EP3WS10RJ

Wirewound Resistors - Through Hole EP 3W (S) 10R 5%
DMG2305UXQ-7

Mfr.#: DMG2305UXQ-7

OMO.#: OMO-DMG2305UXQ-7-DIODES

P-CHANNEL ENHANCEMENT MODE MOSFET
EP3WS10RJ

Mfr.#: EP3WS10RJ

OMO.#: OMO-EP3WS10RJ-TE-CONNECTIVITY-AMP

Wirewound Resistors - Through Hole EP 3W (S) 10R 5%
861400021YO1LF

Mfr.#: 861400021YO1LF

OMO.#: OMO-861400021YO1LF-AMPHENOL-ICC

Headers & Wire Housings 578-5NPF-BERGSTIK STR
CK45-B3FD222KYGNA

Mfr.#: CK45-B3FD222KYGNA

OMO.#: OMO-CK45-B3FD222KYGNA-TDK

Ceramic Disc Capacitors CK45 2200pF 3kv B 10% long kink
Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
1985
Саны енгізіңіз:
IPD65R650CEAUMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
-ден бастаңыз
Top