OMO ElectronicOMO Electronic
Expand menu
Сәлем, жүйеге кіріңізМенің аккаунтым
0 Арба

CSD19535KTTT

CSD19535KTTT
Mfr. #:
CSD19535KTTT
Сипаттама:
MOSFET 100V N-Channel NexFET Power MOSFET
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
CSD19535KTTT Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
CSD19535KTTT Көбірек ақпарат CSD19535KTTT Product Details
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Texas Instruments
Өнім санаты:
MOSFET
RoHS:
E
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
TO-263-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
100 V
Идентификатор - үздіксіз төгу тогы:
200 A
Rds On - ағызу көзіне қарсылық:
3.4 mOhms
Vgs th - Gate-Source шекті кернеуі:
2.2 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
75 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 175 C
Pd - қуаттың шығыны:
300 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
NexFET
Қаптама:
Ролик
Биіктігі:
19.7 mm
Ұзындығы:
9.25 mm
Серия:
CSD19535KTT
Транзистор түрі:
1 N-Channel
Ені:
10.26 mm
Бренд:
Texas Instruments
Форвард өткізгіштік - Мин:
301 S
Күз уақыты:
15 ns
Ылғалға сезімтал:
Иә
Өнім түрі:
MOSFET
Көтеру уақыты:
18 ns
Зауыттық буманың саны:
50
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
21 ns
Қосудың әдеттегі кешігу уақыты:
9 ns
Бірлік салмағы:
0.068643 oz
Tags
CSD19535, CSD1953, CSD19, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
100-V, N channel NexFET™ power MOSFET, single D2PAK, 3.4 mOhm 3-DDPAK/TO-263 -55 to 175
***ical
Trans MOSFET N-CH Si 100V 200A 4-Pin(3+Tab) DDPAK T/R
***ark
Mosfet, N-Ch, 100V, 200A, To-263Aa-3
***S
French Electronic Distributor since 1988
*** Stop Electro
Power Field-Effect Transistor, 200A I(D), 100V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ure Electronics
FDB035N10 Series 100 V 214 A 3.5 mOhm N-Channel SuperFET® MOSFET - D2PAK-3
***Yang
Trans MOSFET N-CH 100V 214A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***emi
N-Channel PowerTrench® MOSFET 100V, 214A, 3.5mΩ
***ment14 APAC
MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:214A; Source Voltage Vds:100V; On Resistance
***r Electronics
Power Field-Effect Transistor, 120A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 214A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.003ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 333W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ical
Trans MOSFET N-CH 75V 260A Automotive 7-Pin(6+Tab) D2PAK T/R
***ernational Rectifier
Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package
***el Electronic
Power Field-Effect Transistor, 240A I(D), 75V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB, ROHS COMPLIANT, PLASTIC, D2PAK-7
*** Source Electronics
Trans MOSFET N-CH Si 100V 190A Automotive 7-Pin(6+Tab) D2PAK T/R / HEXFETPower MOSFET
***ernational Rectifier
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package
***el Electronic
Power Field-Effect Transistor, 190A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7
***(Formerly Allied Electronics)
IRFS3107PBF N-channel MOSFET Transistor; 230 A; 75 V; 3-Pin D2PAK
***roFlash
Single N-Channel 75 V 3 mOhm 160 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH Si 75V 230A 3-Pin(2+Tab) D2PAK Tube
***trelec
MOSFET Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: N Power dissipation: 370 W
***nell
MOSFET, N-CH, 75V, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 230A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.35V; Power D
***ure Electronics
N-Channel 75 V 3.1 mOhm Surface Mount PowerTrench® Mosfet - D2PAK-3
***emi
N-Channel PowerTrench® MOSFET 75V, 235A, 3.1mΩ
***Yang
Trans MOSFET N-CH 75V 235A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***ment14 APAC
MOSFET, N-CH, 235A, 75V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:235A; Source Voltage Vds:75V; On Resistance
***r Electronics
Power Field-Effect Transistor, 120A I(D), 75V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N-CH, 235A, 75V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 235A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***p One Stop Global
Trans MOSFET N-CH 80V 229A 7-Pin(6+Tab) D2PAK T/R
***ure Electronics
Single N-Channel 80 V 246 W 178 nC PowerTrench Surface Mount Mosfet - TO-263-7
***emi
N-Channel PowerTrench® MOSFET 80V, 229A, 2.4mΩ
***r Electronics
Power Field-Effect Transistor, 120A I(D), 80V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
***el Electronic
Chip Resistor - Surface Mount 16Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 16 OHM 1% 1/10W 0402
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***XS
This 100-V, 2.8 mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
***
™
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Бөлім № Сипаттама Қор Бағасы
CSD19535KTTT
DISTI # 296-41135-1-ND		MOSFET N-CH 100V 200A TO263
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1273In Stock
  • 10:$3.5890
  • 1:$4.0200
CSD19535KTTT
DISTI # 296-41135-6-ND		MOSFET N-CH 100V 200A TO263
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1273In Stock
  • 10:$3.5890
  • 1:$4.0200
CSD19535KTTT
DISTI # 296-41135-2-ND		MOSFET N-CH 100V 200A TO263
RoHS: Compliant
Min Qty: 50
Container: Tape & Reel (TR)		1250In Stock
  • 250:$2.5784
  • 100:$2.8571
  • 50:$3.1358
CSD19535KTTT
DISTI # CSD19535KTTT		Trans MOSFET N-CH 100V 200A 3-Pin TO-263 T/R - Tape and Reel (Alt: CSD19535KTTT)
RoHS: Compliant
Min Qty: 200
Container: Reel		Americas - 0
  • 200:$1.7900
  • 300:$1.6900
  • 500:$1.5900
  • 1000:$1.5900
  • 2000:$1.4900
CSD19535KTTTCSD19535KTT 100 V N-Channel NexFET&#153,Power MOSFET1000
  • 1000:$1.4400
  • 750:$1.5100
  • 500:$1.7900
  • 250:$2.1000
  • 100:$2.2400
  • 25:$2.5600
  • 10:$2.7500
  • 1:$3.0500
CSD19535KTTT
DISTI # 595-CSD19535KTTT		MOSFET 100V N-Channel NexFET Power MOSFET
RoHS: Compliant		561
  • 1:$3.3500
  • 10:$3.0200
  • 50:$3.0200
  • 100:$2.4700
  • 250:$2.3100
  • 500:$2.1000
CSD19535KTT
DISTI # 595-CSD19535KTT		MOSFET CSD19535KTT 100 V N-Channel NexFET Power MOSFET 3-DDPAK/TO-263
RoHS: Compliant		88
  • 1:$3.0200
  • 10:$2.7100
  • 100:$2.2200
  • 250:$2.0800
  • 500:$1.8900
CSD19535KTTT
DISTI # 9009885P		NEXFET N-CHANNEL MOSFET 100V 140A D2PAK, RL230
  • 10:£2.2000
  • 26:£2.1150
  • 50:£2.0300
Сурет Бөлім № Сипаттама
ADS1247IPW

Mfr.#: ADS1247IPW

OMO.#: OMO-ADS1247IPW

 Analog to Digital Converters - ADC Low Noise,Prec 24B ADC
LAN9514I-JZX

Mfr.#: LAN9514I-JZX

OMO.#: OMO-LAN9514I-JZX

 USB Interface IC Hi-Speed USB 2.0 Hub High Perf 10/100 Ind
USB2514BI-AEZG

Mfr.#: USB2514BI-AEZG

OMO.#: OMO-USB2514BI-AEZG

 USB Interface IC USB2.0 HIGH SPEED IND HUB CONTROLLER
IRF2907ZPBF

Mfr.#: IRF2907ZPBF

OMO.#: OMO-IRF2907ZPBF

 MOSFET MOSFT 75V 170A 4.5mOhm 180nC
ATMEGA2561-16AU

Mfr.#: ATMEGA2561-16AU

OMO.#: OMO-ATMEGA2561-16AU

 8-bit Microcontrollers - MCU 256kB Flash 4kB EEPROM 54 I/O Pins
LT3990EDD#PBF

Mfr.#: LT3990EDD#PBF

OMO.#: OMO-LT3990EDD-PBF

 Switching Voltage Regulators 60V, 350mA Step-Down Regulator with 2uA Quiescent Current and Integrated Diodes in 3x3 DFN
74650174R

Mfr.#: 74650174R

OMO.#: OMO-74650174R

 Terminals WP-THRBU THR Bush M4 3.5mm Blind
ADS1247IPW

Mfr.#: ADS1247IPW

OMO.#: OMO-ADS1247IPW-TEXAS-INSTRUMENTS

 Analog to Digital Converters - ADC Low Noise,Prec 24B ADC
06033C104KAT2A

Mfr.#: 06033C104KAT2A

OMO.#: OMO-06033C104KAT2A-AVX

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 25volts 0.1uF 10% X7R
LAN9514I-JZX

Mfr.#: LAN9514I-JZX

OMO.#: OMO-LAN9514I-JZX-MICROCHIP-TECHNOLOGY

 USB Interface IC Hi-Speed USB 2.0 Hub High Perf 10/100 Ind
Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
1984
Саны енгізіңіз:
CSD19535KTTT ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
3,70 $
3,70 $
10
3,32 $
33,20 $
2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
-ден бастаңыз
Ең жаңа өнімдер
  • CC2540 Bluetooth System-on-Chip
    CC2540 Bluetooth System-on-Chip
    OMO Electronic' CC2540 is a cost-effective, low-power, true system-on-chip (SoC) for Bluetooth® low energy applications.
  • LP5907 Linear Regulator
    LP5907 Linear Regulator
    LP5907 linear regulators have low quiescent current and lead its class in noise performance without the use for a noise bypass capacitor.
  • Compare CSD19535KTTT
    Compare CSD19535KTTT
    CSD19535KCS vs CSD19535KTT vs CSD19535KTTT
  • CC2630/40/50 SimpleLink Wireless MCUs
    CC2630/40/50 SimpleLink Wireless MCUs
    The OMO Electronic' CC2630 / CC2640 / CC2650 family of cost-effective, ultra-low power, 2.4 GHz RF devices have very-low active RF and MCU current.
  • MSP-TS430RGZ48C Target Board
    MSP-TS430RGZ48C Target Board
    MSP-TS430RGZ48C target boards feature unified FRAM memory, enhanced MSP430 DNA, and integrated analog and digital peripherals.
  • TPA3144D2 Class-D Audio Power Amplifier
    TPA3144D2 Class-D Audio Power Amplifier
    OMO Electronic' TPA3144D2 is an efficient, Class-D audio power amplifier for driving bridged-tied stereo speakers at up to 6 W, 6 Ω, or 8 Ω (per channel).
More Newest Products
Top