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STU2N105K5

STU2N105K5
Mfr. #:
STU2N105K5
Өндіруші:
STMicroelectronics
Сипаттама:
MOSFET N-channel 1050 V, 6 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in IPAK package
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
STU2N105K5 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
STU2N105K5 Көбірек ақпарат STU2N105K5 Product Details
Өнім атрибуты
Төлсипат мәні
Өндіруші:
STMicroelectronics
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
Тесік арқылы
Пакет/қорап:
TO-251-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
1.05 kV
Идентификатор - үздіксіз төгу тогы:
1.5 A
Rds On - ағызу көзіне қарсылық:
8 Ohms
Vgs th - Gate-Source шекті кернеуі:
3 V
Vgs - Шлюз көзі кернеуі:
30 V
Qg - қақпа заряды:
10 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
60 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
MDmesh
Қаптама:
Түтік
Серия:
STU2N105K5
Бренд:
STMicroelectronics
Күз уақыты:
38.5 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
8.5 ns
Зауыттық буманың саны:
3000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
35 ns
Қосудың әдеттегі кешігу уақыты:
14.5 ns
Бірлік салмағы:
0.139332 oz
Tags
STU2N, STU2, STU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 1050 V, 6 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in IPAK package
***r Electronics
Power Field-Effect Transistor, 1.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 1.05KV 1.5A 3-Pin(3+Tab) IPAK Tube
***ure Electronics
N-Channel 1050V 1.5A (Tc) 60W (Tc) Through Hole IPAK (TO-251)
***ronik
N-CH 1050V 1,5A 8000mOhm TO251
***icroelectronics SCT
Power MOSFETs, 1050V, 1.5A, IPAK, Tube
***el Electronic
IC AMP AUDIO PWR 3.1W MONO 8SON
***emi
Power MOSFET, N-Channel, QFET®, 900 V, 1.7 A, 7.2 Ω, IPAK
***r Electronics
Power Field-Effect Transistor, 1.7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ark
MOSFET, N-CH, 900V, 1.7A, IPAK; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
Power MOSFET, N-Channel, QFET®, 900 V, 1.7 A, 7.2 Ω, IPAK
***r Electronics
Power Field-Effect Transistor, 1.7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ark
MOSFET, N-CH, 900V, 1.7A, IPAK; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***i-Key
MOSFET N-CH 900V 1.7A IPAK
***Yang
MOSFET 900V N-Channel QFET - Bulk
***-Wing Technology
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***i-Key
MOSFET N-CH 800V 1.8A IPAK
***ser
MOSFETs 800V N-Channel QFET
***Yang
N-CH/800V/1.8A/6.3OHM - Bulk
***emi
Power MOSFET, N-Channel, QFET®, 1000 V, 1.6 A, 9 Ω, IPAK
***ure Electronics
FQU2N100 Series N-Channel 1000 V 9 Ohms Mosfet - TO-220
***nell
MOSFET, N-CH, 1KV, 1.6A, 150DEG C, 50W; Available until stocks are exhausted
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***icroelectronics
N-channel 1000 V, 6.25 Ohm typ., 1.85 A, Zener-protected SuperMESH Power MOSFET in IPAK package
***SIT Distribution GmbH
Power Field-Effect Transistor, 1.85A I(D), 1000V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N CH, 1000V, 1.85A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.85A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):6.25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:70W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C
MDmesh K5 Power MOSFETs
STMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best RDS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies and welding. The K5 series are available at 800V, 850V, 900V, 950V, 1050V, 1200V and 1500V.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Бөлім № Mfg. Сипаттама Қор Бағасы
STU2N105K5
DISTI # 30608508		STMicroelectronicsTrans MOSFET N-CH 1.05KV 1.5A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		50
  • 50:$1.0557
  • 24:$1.0684
STU2N105K5
DISTI # 497-15282-5-ND		STMicroelectronicsMOSFET N-CH 1050V 1.5A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		Temporarily Out of Stock
    STU2N105K5
    DISTI # C1S730200997856    		STMicroelectronicsMOSFETs50
    • 50:$0.8280
    • 1:$0.8380
    STU2N105K5
    DISTI # STU2N105K5    		STMicroelectronicsTrans MOSFET N-CH 1050V 1.5A 3-Pin IPAK Tube (Alt: STU2N105K5)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 3000
    • 1:€1.5679
    • 10:€1.3289
    • 25:€1.3259
    • 50:€1.3229
    • 100:€1.0579
    • 500:€0.9319
    • 1000:€0.7689
    STU2N105K5
    DISTI # STU2N105K5    		STMicroelectronicsTrans MOSFET N-CH 1050V 1.5A 3-Pin IPAK Tube - Rail/Tube (Alt: STU2N105K5)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tube    		Americas - 0
    • 3000:$0.9289
    • 6000:$0.8849
    • 12000:$0.8449
    • 18000:$0.8079
    • 30000:$0.7909
    STU2N105K5
    DISTI # 511-STU2N105K5    		STMicroelectronicsMOSFET N-channel 1050 V, 6 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in IPAK package
    RoHS: Compliant    		0
    • 1:$1.8300
    • 10:$1.5500
    • 100:$1.2400
    • 500:$1.0900
    • 1000:$0.8990
    • 3000:$0.8380
    • 6000:$0.8070
    • 9000:$0.7750
    STU2N105K5
    DISTI # TMOSP12840    		STMicroelectronicsN-CH 1050V 1,5A 8000mOhm TO251Stock DE - 0Stock HK - 0Stock US - 0
    • 3000:$1.0492
    STU2N105K5STMicroelectronics 3167
      STU2N105K5
      DISTI # XSKDRABV0028410      		STMicroelectronicsPower Field-Effect Transistor
      RoHS: Compliant      		2400 in Stock0 on Order
      • 2400:$1.1600
      • 600:$1.2400
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      Mfr.#: STRVS280X02F

      OMO.#: OMO-STRVS280X02F

      		 TVS Diodes / ESD Suppressors Rep Volt Suppressor TVS 280V Ipp 2A
      STD2N105K5

      Mfr.#: STD2N105K5

      OMO.#: OMO-STD2N105K5

      		 MOSFET N-channel 1050 V, 6 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in DPAK package
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      Mfr.#: STF5N105K5

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      		 MOSFET N-channel 1050 V, 2.9 Ohm typ., 3 A MDmesh K5 Power MOSFET in TO-220FP package
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      Mfr.#: STU7N105K5

      OMO.#: OMO-STU7N105K5

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      STRVS185X02B

      Mfr.#: STRVS185X02B

      OMO.#: OMO-STRVS185X02B-STMICROELECTRONICS

      		 TVS DIODE 128V 185V SMB
      STRVS280X02F

      Mfr.#: STRVS280X02F

      OMO.#: OMO-STRVS280X02F-STMICROELECTRONICS

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      Қол жетімділік
      Қор:
      Available
      Тапсырыс бойынша:
      1986
      Саны енгізіңіз:
      STU2N105K5 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
      Анықтамалық баға (USD)
      Саны
      Тауар өлшемінің бағасы
      Қосымша. Бағасы
      1
      1,83 $
      1,83 $
      10
      1,55 $
      15,50 $
      100
      1,24 $
      124,00 $
      500
      1,09 $
      545,00 $
      1000
      0,90 $
      899,00 $
      3000
      0,84 $
      2 514,00 $
      6000
      0,81 $
      4 842,00 $
      9000
      0,78 $
      6 975,00 $
      2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
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