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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| NE3514S02-T1C-A DISTI # V36:1790_06649813 | California Eastern Laboratories (CEL) | Trans JFET N-CH 4V 70mA HJFET 4-Pin Case S-02 T/R | 0 |
|
| NE3514S02-T1C-A DISTI # V72:2272_06649813 | California Eastern Laboratories (CEL) | Trans JFET N-CH 4V 70mA HJFET 4-Pin Case S-02 T/R | 0 | |
| NE3514S02-T1C-A DISTI # NE3514S02-T1C-A-ND | California Eastern Laboratories (CEL) | HJ-FET NCH 10DB S02 RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| NE3514S02-A DISTI # NE3514S02-A-ND | California Eastern Laboratories (CEL) | HJ-FET NCH 10DB S02 RoHS: Compliant Min Qty: 70 Container: * | Limited Supply - Call | |
| NE3514S02-T1C-A DISTI # NE3514S02-T1C-A | California Eastern Laboratories (CEL) | Trans JFET N-CH 4V 70mA 4-Pin Micro-X (Alt: NE3514S02-T1C-A) RoHS: Compliant Min Qty: 2000 | Europe - 0 | |
| NE3514S02-T1C-A DISTI # 551-NE3514S02-T1C-A | California Eastern Laboratories (CEL) | RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET RoHS: Compliant | 0 | |
| NE3514S02-A DISTI # 551-NE3514S02-A | California Eastern Laboratories (CEL) | RF JFET Transistors K Band Super Low Noise Amp N-Ch RoHS: Compliant | 0 | |
| NE3514S02-T1D-A DISTI # 551-NE3514S02-T1D-A | California Eastern Laboratories (CEL) | RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET RoHS: Compliant | 0 | |
| NE3514S02-T1D-A | Renesas Electronics Corporation | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Silicon, N-Channel, Hetero-junction FET RoHS: Compliant | 50000 |
|
| NE3514S02-T1C-A(K) | NEC Electronics Group | RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, K BAND, SILICON, N-CHANNEL, HETERO-JUNCTION FET | 1097 |
|
| NE3514S02-T1C | Renesas Electronics Corporation | RoHS: Compliant | 2000 | |
| NE3514S02-T1B-A DISTI # NE3514S02-T1B-A | Renesas Electronics Corporation | RF SMALL SIGNAL TRANSISTOR HFET RoHS: Compliant | 0 |
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: NE3511S02A OMO.#: OMO-NE3511S02A-1190 |
Trans JFET N-CH 4V 70mA 4-Pin Micro-X (Alt: NE3511S02A) |
|
Mfr.#: NE3514S02-T1C-A OMO.#: OMO-NE3514S02-T1C-A-CEL |
RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET |
|
|
Mfr.#: NE350184C-T1 OMO.#: OMO-NE350184C-T1-1152 |
RF JFET Transistors Low Noise HJ FET |
|
|
Mfr.#: NE3503M04 V75 OMO.#: OMO-NE3503M04-V75-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: NE3503M04-T2 OMO.#: OMO-NE3503M04-T2-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: NE3508M04 OMO.#: OMO-NE3508M04-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: NE3512S02 OMO.#: OMO-NE3512S02-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: NE3513M04-T2B-A OMO.#: OMO-NE3513M04-T2B-A-CEL |
FET RF 4V 12GHZ M04 4SMD |
|
|
Mfr.#: NE3514S02-T1C OMO.#: OMO-NE3514S02-T1C-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: NE3520 OMO.#: OMO-NE3520-1190 |
Жаңа және түпнұсқа |