NXH160T120L2Q2F2SG

NXH160T120L2Q2F2SG
Mfr. #:
NXH160T120L2Q2F2SG
Өндіруші:
ON Semiconductor
Сипаттама:
PIM 1200V, 160A SPLIT TNP
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
NXH160T120L2Q2F2SG Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
NXH160T120L2Q2F2SG Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Tags
NXH1, NXH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Power Integrated Module (PIM), IGBT 1200 V, 160 A and 600 V, 100 A
***ical
Trans IGBT Module N-CH 1200V 181A 500000mW 56-Pin Case 180AK Tray
***et
Transistor IGBT Module N-CH 1.2kV 160A ±20V Screw Tray
***ark
Igbt, Module, N-Ch, 1.2Kv, 160A; Transistor Polarity:n Channel; Dc Collector Current:160A; Collector Emitter Saturation Voltage Vce(On):2.15V; Power Dissipation Pd:500W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
Solutions for Energy Infrastructure
ON Semiconductor Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. ON Semiconductor offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.
NXH160T120L2Q2F2SG Power Integrated Module
On-Semiconductor NXH160T120L2Q2F2SG Power Integrated Module (PIM) contains a split T-type neutral point clamped three-level inverter. This module consists of two 160A/1200V half-bridge IGBTs with inverse diodes, two 100A/600V neutral point IGBTs with inverse diodes, and two neutral point 120A/600V rectifiers. The NXH160T120L2Q2F2SG module also includes two half-bridge 60A/1200V rectifiers and a Negative Temperature Co-efficient (NTC) thermistor. Typical applications include solar inverters and Uninterruptible Power Supplies (UPS).
Бөлім № Mfg. Сипаттама Қор Бағасы
NXH160T120L2Q2F2SG
DISTI # V99:2348_18980275
ON SemiconductorPIM 1200V, 160A SPLIT TNP12
  • 12:$124.4000
  • 1:$134.3600
NXH160T120L2Q2F2SG
DISTI # NXH160T120L2Q2F2SGOS-ND
ON SemiconductorPIM 1200V, 160A SPLIT TNP
RoHS: Compliant
Min Qty: 1
Container: Tray
9In Stock
  • 1:$134.6400
NXH160T120L2Q2F2SG
DISTI # 27057668
ON SemiconductorPIM 1200V, 160A SPLIT TNP12
  • 1:$134.3600
NXH160T120L2Q2F2SG
DISTI # NXH160T120L2Q2F2SG
ON SemiconductorSplit T-Type NPC Power Module 1200 V 160 A IGBT 600 V 100 A IGBT Tray - Trays (Alt: NXH160T120L2Q2F2SG)
RoHS: Compliant
Min Qty: 6000
Container: Tray
Americas - 0
    NXH160T120L2Q2F2SG
    DISTI # 48AC1759
    ON SemiconductorIGBT, MODULE, N-CH, 1.2KV, 160A,Transistor Polarity:N Channel,DC Collector Current:160A,Collector Emitter Saturation Voltage Vce(on):2.15V,Power Dissipation Pd:500W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes12
    • 100:$118.2000
    • 50:$121.3100
    • 25:$124.4200
    • 10:$127.1000
    • 5:$133.3100
    • 1:$135.9800
    NXH160T120L2Q2F2SG
    DISTI # 863-NXH160T120Q2F2SG
    ON SemiconductorIGBT Modules PIM 1200V 160A SPLIT TNP IGBT
    RoHS: Compliant
    12
    • 1:$134.6300
    • 5:$131.9900
    • 10:$125.8400
    • 25:$123.1900
    NXH160T120L2Q2F2SG
    DISTI # 1723299
    ON SemiconductorINTELLIGENT POWER MODULE 160A 1200V, PU12
    • 12:£93.9500
    NXH160T120L2Q2F2SG
    DISTI # 2835629
    ON SemiconductorIGBT, MODULE, N-CH, 1.2KV, 160A
    RoHS: Compliant
    12
    • 1:$202.9000
    NXH160T120L2Q2F2SG
    DISTI # 2835629
    ON SemiconductorIGBT, MODULE, N-CH, 1.2KV, 160A12
    • 10:£89.2900
    • 5:£101.0000
    • 1:£103.0000
    Сурет Бөлім № Сипаттама
    NXH160T120L2Q2F2SG

    Mfr.#: NXH160T120L2Q2F2SG

    OMO.#: OMO-NXH160T120L2Q2F2SG

    IGBT Modules PIM 1200V 160A SPLIT TNP IGBT
    NXH160T120L2Q2F2SG

    Mfr.#: NXH160T120L2Q2F2SG

    OMO.#: OMO-NXH160T120L2Q2F2SG-ON-SEMICONDUCTOR

    PIM 1200V, 160A SPLIT TNP
    Қол жетімділік
    Қор:
    Available
    Тапсырыс бойынша:
    2000
    Саны енгізіңіз:
    NXH160T120L2Q2F2SG ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
    Анықтамалық баға (USD)
    Саны
    Тауар өлшемінің бағасы
    Қосымша. Бағасы
    1
    168,87 $
    168,87 $
    10
    160,43 $
    1 604,26 $
    100
    151,98 $
    15 198,30 $
    500
    143,54 $
    71 769,75 $
    1000
    135,10 $
    135 096,00 $
    2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
    -ден бастаңыз
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