AOTF11S60L

Mfr. #:: AOTF11S60L
Өндіруші:: Alpha & Omega Semiconductor Inc
Сипаттама:: MOSFET N-CH 600V 11A TO220F
Өміршеңдік кезең:: Осы өндірушіден жаңа.
Деректер тізімі:: AOTF11S60L Деректер тізімі
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Tags: AOTF11S60, AOTF11S, AOTF11, AOTF1, AOTF, AOT

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

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AOTF11S60L Сипаттама

***p One Stop: Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220F

***i-Key: MOSFET N-CH 600V 11A TO220-3F

*** Electronics: MOSFET N-CH 600V 11A TO220F

***el Electronic: DC DC CONVERTER 0.8-6V 3A

***emi: Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, TO-220F

***ure Electronics: Single N-Channel 600 V 36 W 52 nC Silicon Through Hole Mosfet - TO-220F

*** Stop Electro: Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):320mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:36W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Package / Case:TO-220F; Power Dissipation Pd:36W; Power Dissipation Pd:36W; Pulse Current Idm:30A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: SuperFET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switch-ing performance, dv/dt rate and higher avalanche energy. Con-sequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***th Star Micro: SuperFETTM is a new generation of high voltage MOSFETs from Fairchild with outstanding low on-resistance and low gate charge performance, a result of proprietary technology utilizing advanced charge balance mechanisms. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. Product Highlights: 650V @Tj = 150C Typ. Rds(on)=0.32W Ultra low gate charge (typ. Qg=40nC) Low effective output capacitance (typ. Coss.eff=95pF) 100% avalanche tested

***emi: Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, TO-220F

***Yang: Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube

***ure Electronics: FCP Series 600 V 380 mOhm 36 W Through Hole N-channel SUPERFET® Mosfet - TO-220F

***r Electronics: Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N, TO-220F; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:11A; Resistance, Rds On:0.38ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220F; Termination Type:Through Hole; Current, Idm Pulse:33A; Max Repetitive Avalanche Energy:16.7mJ; Pin Configuration:1(G), 2(D), 3(S); Power, Pd:125W; Voltage, Rds Measurement:10V; Voltage, Vds Max:650V; Voltage, Vgs Max:5V

***rchild Semiconductor: SuperFET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switch-ing performance, dv/dt rate and higher avalanche energy. Con-sequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***emi: N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 9 A, 385 mΩ, TO-220F

***Yang: Trans MOSFET N-CH 600V 9A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube

***r Electronics: Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N CH, 600V, 9A, TO220F; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:29.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:27A

***rchild Semiconductor: The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***icroelectronics: N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220FP

*** Source Electronics: MOSFET N-CH 600V 13A TO-220FP / Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220FP Tube

***ure Electronics: N-Channel 600 V 285 mO 35 nC Flange Mount MDmesh II Power Mosfet - TO-220FP

***enic: 600V 13A 30W 285m´Î@10V6.5A 4V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

***r Electronics: Power Field-Effect Transistor, 13A I(D), 600V, 0.285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: MOSFET, N CH, 600V, 13A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:13A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes

***va Crawler: N-channel 600 V, 0.45 Ohm typ., 13.5 A SuperMESH Power MOSFET in TO-220FP package

***et: Trans MOSFET N-CH 600V 13.5A 3-Pin(3+Tab) TO-220FP Tube

***ure Electronics: STP14NK60 Series 600 V 13.5 A 0.5 Ohm N-Ch Power MOSFET - TO-220FPAB

***r Electronics: Power Field-Effect Transistor, 13.5A I(D), 600V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N CH, 600V, 13.5A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.45ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7

***ark: Mosfet Transistor, N Channel, 14 A, 500 V, 340 Mohm, 10 V, 3.75 V Rohs Compliant: Yes

***ure Electronics: N-Channel 500 V 340 mOhm Flange Mount SuperMESH Power Mosfet - TO-220FP

***icroelectronics: N-Channel 500V - 0.30 Ohm - 14A Zener-Protected SuperMESH(TM) POWER MOSFET

***ical: Trans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-220FP Tube

***eco: MOSFET 500V 0.30 OHM 14A, TO 220 ISO FULL PACK IN LINE

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: TO-220FP Polarity: N Power dissipation: 40 W

***(Formerly Allied Electronics): MOSFET N-Ch 500V 14A SuperMESH TO220FP

***nell: MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.34ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipatio

***r Electronics: Power Field-Effect Transistor, 14A I(D), 500V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Market price

Бөлім №	Mfg.	Сипаттама	Қор	Бағасы
AOTF11S60L DISTI # V36:1790_07841436	Alpha & Omega Semiconductor	Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220F RoHS: Compliant	959	100:$1.4007 25:$1.4979 10:$1.6529 1:$2.0402
AOTF11S60L DISTI # AOTF11S60L-ND	Alpha & Omega Semiconductor	MOSFET N-CH 600V 11A TO220F RoHS: Compliant Min Qty: 1000 Container: Tube	Temporarily Out of Stock	1000:$0.9425
AOTF11S60L DISTI # 25690950	Alpha & Omega Semiconductor	Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220F RoHS: Compliant	959	8:$2.0402

Қосымша тауарлар

Сурет	Бөлім №	Сипаттама
	Mfr.#: AOTF11N62 OMO.#: OMO-AOTF11N62-ALPHA-AND-OMEGA-SEMICONDUCTOR	MOSFET N-CH 620V 11A TO220F
	Mfr.#: AOTF10N50FD TF10N50FD OMO.#: OMO-AOTF10N50FD-TF10N50FD-1190	Жаңа және түпнұсқа
	Mfr.#: AOTF10N60L OMO.#: OMO-AOTF10N60L-1190	Жаңа және түпнұсқа
	Mfr.#: AOTF11S60(TF11S60) OMO.#: OMO-AOTF11S60-TF11S60--1190	Жаңа және түпнұсқа
	Mfr.#: AOTF12N30 OMO.#: OMO-AOTF12N30-ALPHA-AND-OMEGA-SEMICONDUCTOR	MOSFET N-CH 300V 11.5A TO220F
	Mfr.#: AOTF12N50,AOTF20C60, OMO.#: OMO-AOTF12N50-AOTF20C60--1190	Жаңа және түпнұсқа
	Mfr.#: AOTF12N60FD_001 OMO.#: OMO-AOTF12N60FD-001-ALPHA-AND-OMEGA-SEMICONDUCTOR	MOSFET N-CH 600V TO220F
	Mfr.#: AOTF15S65 OMO.#: OMO-AOTF15S65-1190	Жаңа және түпнұсқа
	Mfr.#: AOTF10T60L OMO.#: OMO-AOTF10T60L-ALPHA-AND-OMEGA-SEMICONDUCTOR	MOSFET N-CH 600V 10A TO220F
	Mfr.#: AOTF18N65 TF18N65 OMO.#: OMO-AOTF18N65-TF18N65-1190	Жаңа және түпнұсқа

Қол жетімділік

Қор:: Available
Тапсырыс бойынша:: 1500
Саны енгізіңіз:

AOTF11S60L ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.

Анықтамалық баға (USD)

Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы

1: ~~1,91 $~~; ~~1,91 $~~

10: ~~1,82 $~~; ~~18,19 $~~

100: ~~1,72 $~~; ~~172,30 $~~

500: ~~1,63 $~~; ~~813,65 $~~

1000: ~~1,53 $~~; ~~1 531,60 $~~

-ден бастаңыз

AOTF11S60 5
AOTF11S 7
AOTF11 21
AOTF1 117
AOTF 296
AOT 789

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More Newest Products

AOTF11S60L

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes