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SPD02N80C3ATMA1

SPD02N80C3ATMA1
Mfr. #:
SPD02N80C3ATMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET LOW POWER_LEGACY
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
SPD02N80C3ATMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
SPD02N80C3ATMA1 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
PG-TO-252-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
800 V
Идентификатор - үздіксіз төгу тогы:
2 A
Rds On - ағызу көзіне қарсылық:
2.7 Ohms
Vgs th - Gate-Source шекті кернеуі:
2.1 V
Vgs - Шлюз көзі кернеуі:
10 V
Qg - қақпа заряды:
12 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
42 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
CoolMOS
Қаптама:
Ролик
Биіктігі:
2.3 mm
Ұзындығы:
6.5 mm
Серия:
CoolMOS C3
Транзистор түрі:
1 N-Channel
Ені:
6.22 mm
Бренд:
Infineon Technologies
Күз уақыты:
18 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
15 ns
Зауыттық буманың саны:
2500
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
72 ns
Қосудың әдеттегі кешігу уақыты:
25 ns
Бөлім # Бүркеншік аттар:
SP001117754 SPD02N80C3
Бірлік салмағы:
0.139332 oz
Tags
SPD02N80C, SPD02N8, SPD02N, SPD02, SPD0, SPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 V 2.7 mOhm 16 nC CoolMOS™ Power Mosfet - PG-TO252-3
***ment14 APAC
MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:42W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:2A; Package / Case:TO-252; Power Dissipation Pd:42W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
800V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting; Solar
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Бөлім № Mfg. Сипаттама Қор Бағасы
SPD02N80C3ATMA1
DISTI # V72:2272_06384511		Infineon Technologies AGTrans MOSFET N-CH 800V 2A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		200
  • 100:$0.7028
  • 25:$0.8210
  • 10:$1.0034
  • 1:$1.1660
SPD02N80C3ATMA1
DISTI # V36:1790_06384511		Infineon Technologies AGTrans MOSFET N-CH 800V 2A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		0
  • 2500000:$0.3821
  • 1250000:$0.3824
  • 250000:$0.4111
  • 25000:$0.4631
  • 2500:$0.4719
SPD02N80C3ATMA1
DISTI # SPD02N80C3ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 800V 2A 3TO252
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2336In Stock
  • 1000:$0.5321
  • 500:$0.6740
  • 100:$0.8159
  • 10:$1.0460
  • 1:$1.1700
SPD02N80C3ATMA1
DISTI # SPD02N80C3ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 800V 2A 3TO252
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2336In Stock
  • 1000:$0.5321
  • 500:$0.6740
  • 100:$0.8159
  • 10:$1.0460
  • 1:$1.1700
SPD02N80C3ATMA1
DISTI # SPD02N80C3ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 800V 2A 3TO252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 12500:$0.4408
  • 5000:$0.4581
  • 2500:$0.4822
SPD02N80C3ATMA1
DISTI # 33925009		Infineon Technologies AGTrans MOSFET N-CH 800V 2A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2500
  • 25000:$0.4171
  • 15000:$0.4197
  • 10000:$0.4345
  • 5000:$0.4504
  • 2500:$0.4672
SPD02N80C3ATMA1
DISTI # 32336490		Infineon Technologies AGTrans MOSFET N-CH 800V 2A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		200
  • 100:$0.7028
  • 25:$0.8210
  • 14:$1.0034
SPD02N80C3ATMA1
DISTI # SPD02N80C3ATMA1		Infineon Technologies AGTrans MOSFET N-CH 800V 2A 3-Pin TO-252 T/R - Tape and Reel (Alt: SPD02N80C3ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.4168
  • 15000:$0.4243
  • 10000:$0.4391
  • 5000:$0.4556
  • 2500:$0.4726
SPD02N80C3ATMA1
DISTI # SP001117754		Infineon Technologies AGTrans MOSFET N-CH 800V 2A 3-Pin TO-252 T/R (Alt: SP001117754)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.4149
  • 15000:€0.4469
  • 10000:€0.4839
  • 5000:€0.5279
  • 2500:€0.6459
SPD02N80C3ATMA1
DISTI # 33P8203		Infineon Technologies AGMOSFET, N CHANNEL, 800V, 2A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:2A,Drain Source Voltage Vds:800V,On Resistance Rds(on):2.4ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
  • 1000:$0.4970
  • 500:$0.6300
  • 250:$0.6720
  • 100:$0.7130
  • 50:$0.7850
  • 25:$0.8560
  • 10:$0.9280
  • 1:$1.0800
SPD02N80C3ATMA1.
DISTI # 15AC0583		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:2A,Drain Source Voltage Vds:800V,On Resistance Rds(on):2.4ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:42W,No. of Pins:3Pins RoHS Compliant: Yes0
  • 25000:$0.4170
  • 15000:$0.4250
  • 10000:$0.4390
  • 5000:$0.4560
  • 1:$0.4730
SPD02N80C3ATMA1
DISTI # 726-SPD02N80C3ATMA1		Infineon Technologies AGMOSFET LOW POWER_LEGACY
RoHS: Compliant		45955
  • 1:$1.0700
  • 10:$0.9190
  • 100:$0.7060
  • 500:$0.6240
  • 1000:$0.4920
SPD02N80C3ATMA1Infineon Technologies AGSingle N-Channel 800 V 2.7 mOhm 16 nC CoolMOS Power Mosfet - PG-TO252-3
RoHS: Not Compliant		100Cut Tape/Mini-Reel
  • 1:$0.6150
  • 50:$0.5300
  • 100:$0.5200
  • 250:$0.5000
  • 500:$0.4900
SPD02N80C3ATMA1
DISTI # 1664105		Infineon Technologies AGMOSFET, N, TO-252229
  • 500:£0.4810
  • 250:£0.5130
  • 100:£0.5440
  • 10:£0.7660
  • 1:£0.9410
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Қол жетімділік
Қор:
34
Тапсырыс бойынша:
2017
Саны енгізіңіз:
SPD02N80C3ATMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
1,07 $
1,07 $
10
0,92 $
9,19 $
100
0,71 $
70,60 $
500
0,62 $
312,00 $
1000
0,49 $
492,00 $
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