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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| IPB60R190C6ATMA1 DISTI # IPB60R190C6ATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 600V 20.2A TO263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | On Order |
|
| IPB60R190C6ATMA1 DISTI # IPB60R190C6ATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 600V 20.2A TO263 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call |
|
| IPB60R190C6ATMA1 DISTI # IPB60R190C6ATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 600V 20.2A TO263 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call |
|
| IPB60R190C6 DISTI # IPB60R190C6 | Infineon Technologies AG | Trans MOSFET N-CH 650V 20.2A 4-Pin TO-263 T/R (Alt: IPB60R190C6) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel | Asia - 0 | |
| IPB60R190C6 DISTI # SP000641916 | Infineon Technologies AG | Trans MOSFET N-CH 650V 20.2A 4-Pin TO-263 T/R (Alt: SP000641916) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel | Europe - 0 |
|
| IPB60R190C6 DISTI # SP000641916 | Infineon Technologies AG | Trans MOSFET N-CH 650V 20.2A 4-Pin TO-263 T/R (Alt: SP000641916) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel | Europe - 0 |
|
| IPB60R190C6XT DISTI # IPB60R190C6ATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 600V 20.2A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB60R190C6ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
|
| IPB60R190C6ATMA1 DISTI # 30T1830 | Infineon Technologies AG | MOSFET,N CH,600V,20.2A,TO263,Transistor Polarity:N Channel,Continuous Drain Current Id:20.2A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.17ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes | 0 |
|
| IPB60R190C6 DISTI # 726-IPB60R190C6 | Infineon Technologies AG | MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6 RoHS: Compliant | 0 |
|
| IPB60R190C6ATMA1 DISTI # 726-IPB60R190C6ATMA1 | Infineon Technologies AG | MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6 RoHS: Compliant | 0 |
|
| IPB60R190C6 | Infineon Technologies AG | Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 3 |
|
| IPB60R190C6ATMA1 DISTI # 7533005P | Infineon Technologies AG | MOSFET N-CH 650V 20.2A COOLMOS C6 TO263, RL | 200 |
|
| IPB60R190C6ATMA1 DISTI # IPB60R190C6ATMA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,600V,20.2A,151W,PG-TO263-3 | 133 |
|
| IPB60R190C6 | Infineon Technologies AG | 600V,20.2A,N channel Power MOSFET | 7 |
|
| IPB60R190C6ATMA1 DISTI # 1860814 | Infineon Technologies AG | MOSFET,N CH,600V,20.2A,TO263 RoHS: Compliant | 0 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: IPB60R199CP OMO.#: OMO-IPB60R199CP |
MOSFET N-Ch 650V 16A D2PAK-2 CoolMOS CP |
|
Mfr.#: IPB60R125CFD7ATMA1 OMO.#: OMO-IPB60R125CFD7ATMA1 |
MOSFET |
|
Mfr.#: IPB60R280C6ATMA1 |
MOSFET N-CH 600V 13.8A TO263 |
|
|
Mfr.#: IPB60R380P6ATMA1 |
MOSFET N-CH 600V TO263-3 |
|
|
Mfr.#: IPB60R190C6 6R190C6 OMO.#: OMO-IPB60R190C6-6R190C6-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: IPB600N25N3 G OMO.#: OMO-IPB600N25N3-G-1190 |
Trans MOSFET N-CH 250V 25A 3-Pin TO-263 T/R (Alt: IPB600N25N3 G) |
|
|
Mfr.#: IPB60R119CP OMO.#: OMO-IPB60R119CP-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: IPB60R165CP 6R165P OMO.#: OMO-IPB60R165CP-6R165P-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: IPB60R520CPATMA1 |
MOSFET N-CH 600V 6.8A TO-263 |
|
|
Mfr.#: IPB60R250CP OMO.#: OMO-IPB60R250CP-124 |
Darlington Transistors MOSFET N-Ch 600V 12A D2PAK-2 CoolMOS CP |
