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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| IPI65R190C6XKSA1 DISTI # IPI65R190C6XKSA1-ND | Infineon Technologies AG | MOSFET N-CH 650V 20.2A TO262 RoHS: Compliant Min Qty: 500 Container: Tube | Limited Supply - Call |
|
| IPI65R190C6 DISTI # IPI65R190C6XKSA1 | Infineon Technologies AG | Trans MOSFET N-CH 700V 20.2A 3-Pin TO-262 Tube - Rail/Tube (Alt: IPI65R190C6XKSA1) RoHS: Compliant Min Qty: 500 Container: Tube | Americas - 0 |
|
| IPI65R190C6 DISTI # 726-IPI65R190C6 | Infineon Technologies AG | MOSFET N-Ch 700V 20.2A I2PAK-3 CoolMOS C6 RoHS: Compliant | 0 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: IPI65R280E6XKSA1 OMO.#: OMO-IPI65R280E6XKSA1 |
MOSFET N-Ch 700V 13.8A I2PAK-3 |
|
|
Mfr.#: IPI65R190CFDXKSA2 OMO.#: OMO-IPI65R190CFDXKSA2 |
MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve |
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|
Mfr.#: IPI65R420CFDXKSA1 OMO.#: OMO-IPI65R420CFDXKSA1 |
MOSFET LOW POWER_LEGACY |
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Mfr.#: IPI65R380C6XKSA1 OMO.#: OMO-IPI65R380C6XKSA1 |
MOSFET LOW POWER_LEGACY |
|
Mfr.#: IPI65R099C6 OMO.#: OMO-IPI65R099C6-1190 |
- Bulk (Alt: IPI65R099C6) |
|
|
Mfr.#: IPI65R150CFD OMO.#: OMO-IPI65R150CFD-1190 |
Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
|
Mfr.#: IPI65R280C6XKSA1 |
MOSFET N-CH 650V 13.8A TO262 |
|
|
Mfr.#: IPI65R420CFD OMO.#: OMO-IPI65R420CFD-1190 |
MOSFET N-Ch 650V 8.7A I2PAK-3 CoolMOS CFD2 |
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Mfr.#: IPI65R600C6XKSA1 |
MOSFET N-CH 650V 7.3A TO262 |
|
Mfr.#: IPI65R099C6XKSA1 |
RF Bipolar Transistors MOSFET N-Ch 700V 38A I2PAK-3 |
