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IPT60R080G7XTMA1

IPT60R080G7XTMA1
Mfr. #:
IPT60R080G7XTMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET HIGH POWER_NEW
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IPT60R080G7XTMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
IPT60R080G7XTMA1 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
HSOF-8
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
600 V
Идентификатор - үздіксіз төгу тогы:
29 A
Rds On - ағызу көзіне қарсылық:
69 mOhms
Vgs th - Gate-Source шекті кернеуі:
3 V
Vgs - Шлюз көзі кернеуі:
30 V
Qg - қақпа заряды:
42 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
167 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
CoolMOS
Қаптама:
Ролик
Серия:
CoolMOS C7 Gold
Транзистор түрі:
1 N-Channel
Бренд:
Infineon Technologies
Күз уақыты:
3.5 ns
Ылғалға сезімтал:
Иә
Өнім түрі:
MOSFET
Көтеру уақыты:
5 ns
Зауыттық буманың саны:
2000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
61 ns
Қосудың әдеттегі кешігу уақыты:
19 ns
Бөлім # Бүркеншік аттар:
IPT60R080G7 SP001615904
Tags
IPT60R0, IPT60, IPT6, IPT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***nell
MOSFET, N-CH, 600V, 29A, 167W, HSOF
***ark
Mosfet, N-Ch, 600V, 29A, 167W, Hsof; Transistor Polarity:n Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.069Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
The CoolMOS C7 Gold series (G7) for the first time brings together the benefits of the improved 600V CoolMOS C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC. | Summary of Features: Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G; Enables best-in-class R DS(on) in smallest footprint | Benefits: Higher efficiency due to the improved C7 Gold technology and faster switching due to the package low parasitic source inductance and the 4pin Kelvin source concept; Improved power density due to low R DS(on) in small footprint, by either replacing TO-packages (height restrictions) or paralleling SMD packages due to thermal or R DS(on) requirements; Production cost reduction by moving to SMD through quicker assembly times | Target Applications: Telecom; Server; Solar; Industrial SMPS
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ C7 Gold (G7) Power MOSFETs
Infineon Technologies CoolMOS™ C7 Gold (G7) Power MOSFETs are housed in the new SMD TO-Leadless (TOLL) package using the Kelvin source concept. The G7 MOSFETs combine improved 600V and 650V CoolMOS™ G7 technology, 4-pin Kelvin source capability, and the improved thermal properties of the TO-Leadless package. This enables an SMD solution for high current hard switching topologies like power factor correction (PFC) up to 3kW. For the 600V CoolMOS™ G7, the MOSFETs can be used for resonant circuits like high end LLC.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Бөлім № Mfg. Сипаттама Қор Бағасы
IPT60R080G7XTMA1
DISTI # V72:2272_17076899		Infineon Technologies AGIPT60R080G7XTMA10
    IPT60R080G7XTMA1
    DISTI # V36:1790_17076899    		Infineon Technologies AGIPT60R080G7XTMA10
      IPT60R080G7XTMA1
      DISTI # IPT60R080G7XTMA1CT-ND      		Infineon Technologies AGMOSFET N-CH 650V 29A HSOF-8
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)      		2859In Stock
      • 1000:$3.7988
      • 500:$4.3616
      • 100:$5.0088
      • 10:$6.0500
      • 1:$6.7000
      IPT60R080G7XTMA1
      DISTI # IPT60R080G7XTMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 650V 29A HSOF-8
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		2859In Stock
      • 1000:$3.7988
      • 500:$4.3616
      • 100:$5.0088
      • 10:$6.0500
      • 1:$6.7000
      IPT60R080G7XTMA1
      DISTI # IPT60R080G7XTMA1TR-ND      		Infineon Technologies AGMOSFET N-CH 650V 29A HSOF-8
      RoHS: Compliant
      Min Qty: 2000
      Container: Tape & Reel (TR)      		2000In Stock
      • 2000:$3.6427
      IPT60R080G7XTMA1
      DISTI # IPT60R080G7XTMA1      		Infineon Technologies AGHIGH POWER_NEW - Tape and Reel (Alt: IPT60R080G7XTMA1)
      RoHS: Compliant
      Min Qty: 2000
      Container: Reel      		Americas - 0
      • 12000:$3.2900
      • 20000:$3.2900
      • 8000:$3.3900
      • 4000:$3.5900
      • 2000:$3.6900
      IPT60R080G7XTMA1
      DISTI # 84AC6841      		Infineon Technologies AGMOSFET, N-CH, 600V, 29A, 167W, HSOF,Transistor Polarity:N Channel,Continuous Drain Current Id:29A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.069ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes2298
      • 1000:$3.5500
      • 500:$4.0700
      • 250:$4.4600
      • 100:$4.6800
      • 50:$5.0300
      • 25:$5.3800
      • 10:$5.6500
      • 1:$6.2500
      IPT60R080G7XTMA1
      DISTI # 726-IPT60R080G7XTMA1      		Infineon Technologies AGMOSFET HIGH POWER_NEW
      RoHS: Compliant      		1680
      • 1:$6.1900
      • 10:$5.5900
      • 25:$5.3300
      • 100:$4.6300
      • 250:$4.4200
      • 500:$4.0300
      • 1000:$3.5100
      • 2000:$3.3800
      IPT60R080G7XTMA1
      DISTI # 2983371      		Infineon Technologies AGMOSFET, N-CH, 600V, 29A, 167W, HSOF2298
      • 500:£2.9600
      • 250:£3.2300
      • 100:£3.3800
      • 10:£3.9000
      • 1:£5.0100
      IPT60R080G7XTMA1
      DISTI # 2983371      		Infineon Technologies AGMOSFET, N-CH, 600V, 29A, 167W, HSOF
      RoHS: Compliant      		2298
      • 250:$5.2100
      • 100:$5.4700
      • 25:$6.1500
      • 1:$7.0200
      Сурет Бөлім № Сипаттама
      SI8273GB-IS1

      Mfr.#: SI8273GB-IS1

      OMO.#: OMO-SI8273GB-IS1

      		 Gate Drivers High CMTI 2.5 kV 4.2 V UVLO HS/LS isolated driver
      IPL60R065P7AUMA1

      Mfr.#: IPL60R065P7AUMA1

      OMO.#: OMO-IPL60R065P7AUMA1

      		 MOSFET HIGH POWER_NEW
      IPT60R028G7XTMA1

      Mfr.#: IPT60R028G7XTMA1

      OMO.#: OMO-IPT60R028G7XTMA1

      		 MOSFET HIGH POWER NEW
      IPT60R050G7XTMA1

      Mfr.#: IPT60R050G7XTMA1

      OMO.#: OMO-IPT60R050G7XTMA1

      		 MOSFET HIGH POWER_NEW
      PIC18F65K40-E/PT

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      OMO.#: OMO-PIC18F65K40-E-PT

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      CC0603KRX7R9BB104

      Mfr.#: CC0603KRX7R9BB104

      OMO.#: OMO-CC0603KRX7R9BB104

      		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 100nF 50V X7R 10%
      3727

      Mfr.#: 3727

      OMO.#: OMO-3727

      		 Development Boards & Kits - ARM Adafruit ItsyBitsy M0 Express
      IPL60R065P7AUMA1

      Mfr.#: IPL60R065P7AUMA1

      OMO.#: OMO-IPL60R065P7AUMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 4VSON
      IPT60R050G7XTMA1

      Mfr.#: IPT60R050G7XTMA1

      OMO.#: OMO-IPT60R050G7XTMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 650V 44A HSOF-8
      Қол жетімділік
      Қор:
      Available
      Тапсырыс бойынша:
      1984
      Саны енгізіңіз:
      IPT60R080G7XTMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
      Анықтамалық баға (USD)
      Саны
      Тауар өлшемінің бағасы
      Қосымша. Бағасы
      1
      6,19 $
      6,19 $
      10
      5,59 $
      55,90 $
      25
      5,33 $
      133,25 $
      100
      4,63 $
      463,00 $
      250
      4,42 $
      1 105,00 $
      500
      4,03 $
      2 015,00 $
      1000
      3,51 $
      3 510,00 $
      -ден бастаңыз
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