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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| FQU2N60CTU DISTI # 33614281 | ON Semiconductor | QFC 600V 4.7OHM IPAK | 3498 |
|
| FQU2N60CTU DISTI # FQU2N60CTU-ND | ON Semiconductor | MOSFET N-CH 600V 1.9A IPAK RoHS: Compliant Min Qty: 1 Container: Tube | 37In Stock |
|
| FQU2N60CTU DISTI # V36:1790_06359742 | ON Semiconductor | QFC 600V 4.7OHM IPAK | 0 |
|
| FQU2N60CTU DISTI # FQU2N60CTU | ON Semiconductor | Trans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: FQU2N60CTU) RoHS: Compliant Min Qty: 5040 Container: Tube | Americas - 430 |
|
| FQU2N60CTU DISTI # FQU2N60CTU | ON Semiconductor | Trans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Rail - Bulk (Alt: FQU2N60CTU) RoHS: Compliant Min Qty: 834 Container: Bulk | Americas - 0 |
|
| FQU2N60CTU DISTI # FQU2N60CTU | ON Semiconductor | Trans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Rail (Alt: FQU2N60CTU) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| FQU2N60CTU DISTI # FQU2N60CTU | ON Semiconductor | Trans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Rail (Alt: FQU2N60CTU) RoHS: Compliant Min Qty: 5040 | Asia - 0 |
|
| FQU2N60CTLTU DISTI # FQU2N60CTLTU | ON Semiconductor | - Bulk (Alt: FQU2N60CTLTU) RoHS: Compliant Min Qty: 962 Container: Bulk | Americas - 0 |
|
| FQU2N60CTU. DISTI # 60AC9683 | ON Semiconductor | Continuous Drain Current Id:1.9A,Drain Source Voltage Vds:600V,Operating Temperature Max:150°C,Product Range:QFET Series,Automotive Qualification Standard:-,MSL:- RoHS Compliant: Yes | 0 |
|
| FQU2N60CTU DISTI # 512-FQU2N60CTU | ON Semiconductor | MOSFET 600V N-Channel Adv Q-FET C-Series RoHS: Compliant | 4617 |
|
| FQU2N60CTLTU DISTI # 512-FQU2N60CTLTU | ON Semiconductor | MOSFET 600V N-Channel Adv Q-FET C-Series RoHS: Compliant | 0 | |
| FQU2N60CTLTU | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 5 |
|
| FQU2N60CTU | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 42125 |
|
| FQU2N60CTU DISTI # 6715357 | ON Semiconductor | MOSFET N-CHANNEL 600V 1.9A IPAK, PK | 80 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: FQU2N90TU-AM002 OMO.#: OMO-FQU2N90TU-AM002 |
MOSFET 900V 1.6A 7.8Ohm N-Channel |
|
|
Mfr.#: FQU2N50BTU OMO.#: OMO-FQU2N50BTU |
MOSFET Power MOSFET |
|
Mfr.#: FQU2N50BTU |
MOSFET N-CH 500V 1.6A IPAK |
|
Mfr.#: FQU2N60 OMO.#: OMO-FQU2N60-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: FQU2N60/SSU2N60 OMO.#: OMO-FQU2N60-SSU2N60-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: FQU2N60B OMO.#: OMO-FQU2N60B-1190 |
Жаңа және түпнұсқа |
|
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Mfr.#: FQU2N60C-NL OMO.#: OMO-FQU2N60C-NL-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: FQU2N60CT OMO.#: OMO-FQU2N60CT-1190 |
Жаңа және түпнұсқа |
|
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Mfr.#: FQU2N90S OMO.#: OMO-FQU2N90S-1190 |
Жаңа және түпнұсқа |
|
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Mfr.#: FQU2N90TU,FQU2N90 OMO.#: OMO-FQU2N90TU-FQU2N90-1190 |
Жаңа және түпнұсқа |