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BSZ025N04LSATMA1

BSZ025N04LSATMA1
Mfr. #:
BSZ025N04LSATMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET MV POWER MOS
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
BSZ025N04LSATMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
BSZ025N04LSATMA1 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
TSDSON-8
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
40 V
Идентификатор - үздіксіз төгу тогы:
40 A
Rds On - ағызу көзіне қарсылық:
2 mOhms
Vgs th - Gate-Source шекті кернеуі:
1.2 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
52 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
69 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
OptiMOS
Қаптама:
Ролик
Биіктігі:
1.1 mm
Ұзындығы:
3.3 mm
Серия:
OptiMOS 5
Транзистор түрі:
1 N-Channel
Ені:
3.3 mm
Бренд:
Infineon Technologies
Форвард өткізгіштік - Мин:
55 S
Күз уақыты:
5 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
7 ns
Зауыттық буманың саны:
5000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
27 ns
Қосудың әдеттегі кешігу уақыты:
6 ns
Бөлім # Бүркеншік аттар:
BSZ025N04LS SP001252032
Бірлік салмағы:
0.005503 oz
Tags
BSZ02, BSZ0, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 40 V 2.5 mOhm 52 nC OptiMOS™ Power Mosfet - TSDSON-8 FL
***p One Stop Global
Trans MOSFET N-CH 40V 22A 8-Pin TSDSON EP T/R
***i-Key
MOSFET N-CH 40V 22A TSDSON-8
***ical
Power-MOSFET, 40V
***ark
TRENCH <= 40V
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 40V, 40A, TSDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:69W; Transistor Case Style:TSDSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 40V, 40A, TSDSON; Polarità Transistor:Canale N; Corrente Continua di Drain Id:40A; Tensione Drain Source Vds:40V; Resistenza di Attivazione Rds(on):0.002ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2V; Dissipazione di Potenza Pd:69W; Modello Case Transistor:TSDSON; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:OptiMOS 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
New 40V and 60V product families, feature not only the industrys lowest R DS(on) but also a perfect switching behavior for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology. | Summary of Features: Optimized for synchronous rectification; 15% lower R DS(on) than alternative devices; 31% improvement of FOM over similar devices; Integrated Schottky-like diode; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control; Or-ing switches
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Бөлім № Mfg. Сипаттама Қор Бағасы
BSZ025N04LSATMA1
DISTI # V36:1790_06384227		Infineon Technologies AGTrans MOSFET N-CH 40V 22A 8-Pin TSDSON EP T/R
RoHS: Compliant		210000
  • 5000:$0.5521
BSZ025N04LSATMA1
DISTI # V72:2272_06384227		Infineon Technologies AGTrans MOSFET N-CH 40V 22A 8-Pin TSDSON EP T/R
RoHS: Compliant		4112
  • 3000:$0.5625
  • 1000:$0.5858
  • 500:$0.7872
  • 250:$0.8008
  • 100:$0.8898
  • 25:$1.0361
  • 10:$1.1513
  • 1:$1.4815
BSZ025N04LSATMA1
DISTI # BSZ025N04LSATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 40V 22A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1188In Stock
  • 1000:$0.7060
  • 500:$0.8942
  • 100:$1.0825
  • 10:$1.3880
  • 1:$1.5500
BSZ025N04LSATMA1
DISTI # BSZ025N04LSATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 40V 22A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1188In Stock
  • 1000:$0.7060
  • 500:$0.8942
  • 100:$1.0825
  • 10:$1.3880
  • 1:$1.5500
BSZ025N04LSATMA1
DISTI # BSZ025N04LSATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 40V 22A TSDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 10000:$0.5849
  • 5000:$0.6077
BSZ025N04LSATMA1
DISTI # 31741599		Infineon Technologies AGTrans MOSFET N-CH 40V 22A 8-Pin TSDSON EP T/R
RoHS: Compliant		210000
  • 5000:$0.5521
BSZ025N04LSATMA1
DISTI # 31053930		Infineon Technologies AGTrans MOSFET N-CH 40V 22A 8-Pin TSDSON EP T/R
RoHS: Compliant		5000
  • 50000:$0.5216
  • 30000:$0.5315
  • 20000:$0.5503
  • 10000:$0.5701
  • 5000:$0.5919
BSZ025N04LSATMA1
DISTI # 33152146		Infineon Technologies AGTrans MOSFET N-CH 40V 22A 8-Pin TSDSON EP T/R
RoHS: Compliant		5000
  • 5000:$0.7280
BSZ025N04LSATMA1
DISTI # 32881809		Infineon Technologies AGTrans MOSFET N-CH 40V 22A 8-Pin TSDSON EP T/R
RoHS: Compliant		4112
  • 3000:$0.5521
  • 1000:$0.5858
  • 500:$0.7872
  • 250:$0.8008
  • 100:$0.8898
  • 25:$1.0361
  • 11:$1.1513
BSZ025N04LSATMA1
DISTI # BSZ025N04LSATMA1		Infineon Technologies AGTrans MOSFET N-CH 40V 22A 8-Pin TSDSON FL T/R - Tape and Reel (Alt: BSZ025N04LSATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.5269
  • 30000:$0.5369
  • 20000:$0.5559
  • 10000:$0.5759
  • 5000:$0.5979
BSZ025N04LSATMA1
DISTI # SP001252032		Infineon Technologies AGTrans MOSFET N-CH 40V 22A 8-Pin TSDSON FL T/R (Alt: SP001252032)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 50000:€0.5039
  • 30000:€0.5429
  • 20000:€0.5879
  • 10000:€0.6409
  • 5000:€0.7839
BSZ025N04LSATMA1
DISTI # 12AC9454		Infineon Technologies AGMOSFET, N-CH, 40V, 40A, TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.002ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation RoHS Compliant: Yes2935
  • 1000:$0.6300
  • 500:$0.7980
  • 250:$0.8500
  • 100:$0.9030
  • 50:$0.9920
  • 25:$1.0800
  • 10:$1.1700
  • 1:$1.3700
BSZ025N04LS
DISTI # 726-BSZ025N04LS		Infineon Technologies AGMOSFET MV POWER MOS
RoHS: Compliant		3006
  • 1:$1.3600
  • 10:$1.1600
  • 100:$0.8940
  • 500:$0.7900
  • 1000:$0.6240
  • 5000:$0.5530
  • 10000:$0.5320
BSZ025N04LSATMA1
DISTI # 726-BSZ025N04LSATMA1		Infineon Technologies AGMOSFET MV POWER MOS
RoHS: Compliant		4338
  • 1:$1.3600
  • 10:$1.1600
  • 100:$0.8940
  • 500:$0.7900
  • 1000:$0.6240
  • 5000:$0.5530
  • 10000:$0.5320
BSZ025N04LSATMA1Infineon Technologies AGSingle N-Channel 40 V 2.5 mOhm 52 nC OptiMOS Power Mosfet - TSDSON-8 FL
RoHS: Not Compliant		5000Reel
  • 5000:$0.5200
BSZ025N04LSATMA1
DISTI # 2709857		Infineon Technologies AGMOSFET, N-CH, 40V, 40A, TSDSON
RoHS: Compliant		2935
  • 1000:$1.0800
  • 500:$1.3600
  • 100:$1.7600
  • 10:$2.2200
  • 1:$2.5000
BSZ025N04LSATMA1
DISTI # 2709857		Infineon Technologies AGMOSFET, N-CH, 40V, 40A, TSDSON8818
  • 500:£0.5970
  • 250:£0.6360
  • 100:£0.6750
  • 25:£0.7740
  • 5:£0.8730
BSZ025N04LSATMA1
DISTI # XSFP00000153419		Infineon Technologies AG 
RoHS: Compliant		10000 in Stock0 on Order
  • 10000:$0.5778
  • 5000:$0.6118
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Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
1987
Саны енгізіңіз:
BSZ025N04LSATMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
1,36 $
1,36 $
10
1,16 $
11,60 $
100
0,89 $
89,40 $
500
0,79 $
395,00 $
1000
0,62 $
624,00 $
2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
-ден бастаңыз
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