IPB027N10N3GATMA1

IPB027N10N3GATMA1
Mfr. #:
IPB027N10N3GATMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IPB027N10N3GATMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
PG-TO-263-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
100 V
Идентификатор - үздіксіз төгу тогы:
120 A
Rds On - ағызу көзіне қарсылық:
2.7 mOhms
Vgs th - Gate-Source шекті кернеуі:
2 V
Vgs - Шлюз көзі кернеуі:
10 V
Qg - қақпа заряды:
155 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 175 C
Pd - қуаттың шығыны:
300 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
OptiMOS
Қаптама:
Ролик
Биіктігі:
4.4 mm
Ұзындығы:
10 mm
Серия:
OptiMOS 3
Транзистор түрі:
1 N-Channel
Ені:
9.25 mm
Бренд:
Infineon Technologies
Форвард өткізгіштік - Мин:
94 S
Күз уақыты:
28 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
58 ns
Зауыттық буманың саны:
1000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
84 ns
Қосудың әдеттегі кешігу уақыты:
34 ns
Бөлім # Бүркеншік аттар:
G IPB027N10N3 IPB27N1N3GXT SP000506508
Бірлік салмағы:
0.068654 oz
Tags
IPB027N10N3, IPB027, IPB02, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 4.5 mOhm 206 nC OptiMOS™ Power Mosfet - D2PAK
***ow.cn
Trans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO263-3, RoHS
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:120A; On Resistance Rds(On):0.0023Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V Rohs Compliant: Yes
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
Бөлім № Mfg. Сипаттама Қор Бағасы
IPB027N10N3GATMA1
DISTI # IPB027N10N3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 100V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2767In Stock
  • 500:$3.7670
  • 100:$4.6520
  • 10:$5.6730
  • 1:$6.3500
IPB027N10N3GATMA1
DISTI # IPB027N10N3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 100V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2767In Stock
  • 500:$3.7670
  • 100:$4.6520
  • 10:$5.6730
  • 1:$6.3500
IPB027N10N3GATMA1
DISTI # IPB027N10N3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 100V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
2000In Stock
  • 1000:$3.0845
IPB027N10N3GATMA1
DISTI # IPB027N10N3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB027N10N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$2.6900
  • 2000:$2.6900
  • 4000:$2.6900
  • 6000:$2.6900
  • 10000:$2.6900
IPB027N10N3GATMA1
DISTI # SP000506508
Infineon Technologies AGTrans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R (Alt: SP000506508)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 1000:€2.6900
  • 2000:€2.5900
  • 4000:€2.4900
  • 6000:€2.2900
  • 10000:€2.0900
IPB027N10N3GATMA1
DISTI # 85X6013
Infineon Technologies AGMOSFET, N-CH, 100V, 120A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V RoHS Compliant: Yes156
  • 1:$5.3100
  • 10:$4.5100
  • 25:$4.3100
  • 50:$4.1100
  • 100:$3.9100
  • 250:$3.7100
  • 500:$3.3300
IPB027N10N3GATMA1.
DISTI # 27AC6718
Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power Dissipation Pd:300W,No. of Pins:3Pins RoHS Compliant: Yes0
    IPB027N10N3GATMA1Infineon Technologies AGSingle N-Channel 100 V 4.5 mOhm 206 nC OptiMOS Power Mosfet - D2PAK
    RoHS: Not Compliant
    2000Reel
    • 1000:$3.0800
    IPB027N10N3 G
    DISTI # 726-IPB027N10N3G
    Infineon Technologies AGMOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
    RoHS: Compliant
    5900
    • 1:$5.3100
    • 10:$4.5100
    • 100:$3.9100
    • 250:$3.7100
    • 500:$3.3300
    • 1000:$2.8100
    IPB027N10N3GATMA1
    DISTI # 726-IPB027N10N3GATMA
    Infineon Technologies AGMOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
    RoHS: Compliant
    757
    • 1:$5.3100
    • 10:$4.5100
    • 100:$3.9100
    • 250:$3.7100
    • 500:$3.3300
    • 1000:$2.8100
    IPB027N10N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant
    10
    • 1000:$2.4200
    • 500:$2.5500
    • 100:$2.6500
    • 25:$2.7700
    • 1:$2.9800
    IPB027N10N3GATMA1
    DISTI # 8259235
    Infineon Technologies AGMOSFET N-CH 120A 100V OPTIMOS3 TO263, PK184
    • 2:£3.9150
    • 10:£2.9900
    • 50:£2.7250
    • 250:£2.4600
    • 500:£2.2150
    IPB027N10N3GATMA1
    DISTI # 8259235P
    Infineon Technologies AGMOSFET N-CH 120A 100V OPTIMOS3 TO263, RL922
    • 10:£2.9900
    • 50:£2.7250
    • 250:£2.4600
    • 500:£2.2150
    IPB027N10N3GATMA1
    DISTI # 2443379
    Infineon Technologies AGMOSFET, N CH, 100V, 120A, TO-263-3
    RoHS: Compliant
    154
    • 1:$8.4000
    • 10:$7.1400
    • 100:$6.1900
    • 250:$5.8700
    • 500:$5.2800
    • 1000:$4.4500
    IPB027N10N3GATMA1
    DISTI # 2443379RL
    Infineon Technologies AGMOSFET, N CH, 100V, 120A, TO-263-3
    RoHS: Compliant
    0
    • 1:$8.4000
    • 10:$7.1400
    • 100:$6.1900
    • 250:$5.8700
    • 500:$5.2800
    • 1000:$4.4500
    IPB027N10N3GATMA1
    DISTI # 2443379
    Infineon Technologies AGMOSFET, N CH, 100V, 120A, TO-263-3
    RoHS: Compliant
    254
    • 1:£3.7700
    • 10:£2.7600
    • 100:£2.4800
    • 250:£2.3000
    • 500:£2.1100
    IPB027N10N3GATMA1
    DISTI # XSFP00000103332
    Infineon Technologies AG 
    RoHS: Compliant
    1346
    • 1000:$4.1100
    • 1346:$3.8500
    Сурет Бөлім № Сипаттама
    FMMT593TA

    Mfr.#: FMMT593TA

    OMO.#: OMO-FMMT593TA

    Bipolar Transistors - BJT PNP Medium Power
    LL4148-GS08

    Mfr.#: LL4148-GS08

    OMO.#: OMO-LL4148-GS08

    Diodes - General Purpose, Power, Switching 100V Io/150mA T/R
    ERM8-050-01-L-D-RA-TR

    Mfr.#: ERM8-050-01-L-D-RA-TR

    OMO.#: OMO-ERM8-050-01-L-D-RA-TR

    Board to Board & Mezzanine Connectors 0.80 mm Edge Rate Rugged High-Speed Terminal Strip
    SRP1265A-3R3M

    Mfr.#: SRP1265A-3R3M

    OMO.#: OMO-SRP1265A-3R3M

    Fixed Inductors 3.3uH 20% SMD 1265 AEC-Q200
    C3225X5R1A336M200AC

    Mfr.#: C3225X5R1A336M200AC

    OMO.#: OMO-C3225X5R1A336M200AC

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 10V 33uF X5R 20% T: 2mm
    AC0805KKX7R0BB104

    Mfr.#: AC0805KKX7R0BB104

    OMO.#: OMO-AC0805KKX7R0BB104

    Multilayer Ceramic Capacitors MLCC - SMD/SMT .1uF 100V 10% AEC-Q200
    C1005X7S2A103K050BB

    Mfr.#: C1005X7S2A103K050BB

    OMO.#: OMO-C1005X7S2A103K050BB

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 100V 0.01uF X7S 10% T: 0.5mm
    ERM8-050-01-L-D-RA-TR

    Mfr.#: ERM8-050-01-L-D-RA-TR

    OMO.#: OMO-ERM8-050-01-L-D-RA-TR-SAMTEC

    Conn Micro High Speed Terminal Strip HDR 100 POS 0.8mm Solder RA SMD T/R
    LL4148-GS08

    Mfr.#: LL4148-GS08

    OMO.#: OMO-LL4148-GS08-VISHAY

    Diodes - General Purpose, Power, Switching 100V Io/150mA T/R
    AC0805KKX7R0BB104

    Mfr.#: AC0805KKX7R0BB104

    OMO.#: OMO-AC0805KKX7R0BB104-YAGEO

    SURFACE MOUNT MULTILAYERCERAMIC CAPACITORS
    Қол жетімділік
    Қор:
    Available
    Тапсырыс бойынша:
    1987
    Саны енгізіңіз:
    IPB027N10N3GATMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
    Анықтамалық баға (USD)
    Саны
    Тауар өлшемінің бағасы
    Қосымша. Бағасы
    1
    5,30 $
    5,30 $
    10
    4,50 $
    45,00 $
    100
    3,90 $
    390,00 $
    250
    3,70 $
    925,00 $
    500
    3,32 $
    1 660,00 $
    -ден бастаңыз
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