We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| HGTG11N120CND DISTI # HGTG11N120CND-ND | ON Semiconductor | IGBT 1200V 43A 298W TO247 RoHS: Compliant Min Qty: 1 Container: Tube | 343In Stock |
|
| HGTG11N120CND DISTI # HGTG11N120CND | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG11N120CND) RoHS: Compliant Min Qty: 1 | Europe - 50 |
|
| HGTG11N120CND DISTI # HGTG11N120CND | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG11N120CND) RoHS: Compliant Min Qty: 1 Container: Tube | Americas - 18000 |
|
| HGTG11N120CND DISTI # 58K8900 | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K8900) RoHS: Compliant Min Qty: 1 Container: Bulk | Americas - 0 |
|
| HGTG11N120CND DISTI # 58K8900 | ON Semiconductor | SINGLE IGBT, 1.2KV, 43A,DC Collector Current:43A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes | 872 |
|
| HGTG11N120CND DISTI # 512-HGTG11N120CND | ON Semiconductor | IGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dde RoHS: Compliant | 189 |
|
| HGTG11N120CND DISTI # HGTG11N120CND | ON Semiconductor | Transistor: IGBT,1.2kV,22A,298W,TO247 | 6 |
|
| HGTG11N120CND | Fairchild Semiconductor Corporation | RoHS: Compliant | Europe - 200 | |
| HGTG11N120CND | Fairchild Semiconductor Corporation | INSTOCK | 1180 | |
| HGTG11N120CND DISTI # 1611490 | ON Semiconductor | IGBT, N RoHS: Compliant | 1298 |
|
| HGTG11N120CND DISTI # 1611490 | ON Semiconductor | IGBT, N RoHS: Compliant | 1276 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: 11N10 OMO.#: OMO-11N10-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: 11N10C OMO.#: OMO-11N10C-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: 11N120 OMO.#: OMO-11N120-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: 11N120BND OMO.#: OMO-11N120BND-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: 11N120C OMO.#: OMO-11N120C-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: 11N120CID OMO.#: OMO-11N120CID-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: 11N120CND OMO.#: OMO-11N120CND-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: 11N120CND 11N120 TO-2 |
Жаңа және түпнұсқа |
|
|
Mfr.#: 11N121K OMO.#: OMO-11N121K-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: 11N18A OMO.#: OMO-11N18A-1190 |
Жаңа және түпнұсқа |